Power Transistors

2SB0940 (2SB940), 2SB0940A (2SB940A)

Silicon PNP epitaxial planar type

For power amplification Unit: mm

For TV vertical deflection output 10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2
Complementary to 2SD1264, 2SD1264A

4.2±0.2
7.5±0.2
φ 3.1±0.1

16.7±0.3
■ Features
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation PC
• Full-pack package which can be installed to the heat sink with one screw 1.4±0.1
1.3±0.2

Solder Dip
14.0±0.5

(4.0)
0.5+0.2
–0.1
■ Absolute Maximum Ratings TC = 25°C 0.8±0.1

Parameter Symbol Rating Unit 2.54±0.3

Collector-base voltage (Emitter open) VCBO −200 V 5.08±0.5
1: Base
Collector-emitter voltage 2SB0940 VCEO −150 V 2: Collector
1 2 3
(Base open) 2SB0940A −180 3: Emitter
EIAJ: SC-67
Emitter-base voltage (Collector open) VEBO −6 V TO-220F-A1 Package
Collector current IC −2 A
Peak collector current ICP −3 A
Collector power PC 30 W
dissipation Ta = 25°C 2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −50 µA, IE = 0 −200 V
Collector-emitter voltage 2SB0940 VCEO IC = −5 mA, IB = 0 −150 V
(Base open) 2SB0940A −180
Emitter-base voltage (Collector open) VEBO IE = −500 µA, IC = 0 −6 V
Base-emitter voltage VBE VCE = −10 V, IC = −400 mA −1 V
Collector-base cutoff current (Emitter open) ICBO VCB = −200 V, IE = 0 −50 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −4 V, IC = 0 −50 µA
Forward current transfer ratio hFE1 * VCE = −10 V, IC = −150 mA 60 240 
hFE2 VCE = −10 V, IC = −400 mA 50
Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA −1 V
Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q P
hFE1 60 to 140 100 to 240

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003 SJD00021BED 1

2SB0940, 2SB0940A

PC  Ta IC  VCE IC  VBE
50 −600 −2.0
(1)TC=Ta TC=25˚C VCE=–10V
(2)With a 100×100×2mm
Collector power dissipation PC (W)

Al heat sink IB=–4.5mA

−500
40 (3)With a 50×50×2mm −1.6
Al heat sink –4.0mA

Collector current IC (A)

Collector current IC (A)

(4)Without heat sink –3.5mA 25˚C
(PC=2W) −400 –3.0mA
TC=100˚C
30 −1.2
–2.5mA
−300 –2.0mA
(1)
20 –1.5mA − 0.8
−200 –25˚C
–1.0mA
10 − 0.4
(2) −100 –0.5mA
(3)
(4)
0 0 0
0 40 80 120 160 0 −2 −4 −6 −8 −10 −12 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I C
104 104
Collector-emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=–10V VCE=–10V

−10 f=10MHz
TC=25˚C
Forward current transfer ratio hFE

Transition frequency fT (MHz)

103 103

TC=100˚C
−1
25˚C
TC=100˚C 102 102
25˚C –25˚C
–25˚C
− 0.1
10 10

− 0.01 1 1
− 0.01 − 0.1 −1 − 0.01 − 0.1 −1 −10 − 0.01 − 0.1 −1 −10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Safe operation area Rth  t

−100 103
Non repetitive pulse (1)Without heat sink
TC=25˚C (2)With a 100×100×2mm Al heat sink
Thermal resistance Rth (°C/W)

102 (1)
−10
Collector current IC (A)

ICP (2)
t=0.5ms 10
IC t=5ms
−1
t=1ms

1
DC
− 0.1
10−1
2SB0940A
2SB0940

− 0.01 10−2
−1 −10 −100 −1 000 10−3 10−2 10−1 1 10 102 103 104
Collector-emitter voltage VCE (V) Time t (s)

2 SJD00021BED
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2002 JUL