APT150GT120JR

1200V, 150A, VCE(ON) = 3.2V Typical

Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non- E E
Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and
ultrafast switching speed. 7
G C - 22
Features
S OT
• Low Forward Voltage Drop • RBSOA and SCSOA Rated
• Low Tail Current • High Frequency Switching to 50KHz "UL Recognized"
file # E145592
IS OT OP ®
• Integrated Gate Resistor • Ultra Low Leakage Current
Low EMI, High Reliability
• RoHS Compliant

Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

Maximum Ratings All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter Ratings Unit
VCES Collector-Emitter Voltage 1200
Volts
VGE Gate-Emitter Voltage ±20
IC1 Continuous Collector Current @ TC = 25°C 170
IC2 Continuous Collector Current @ TC = 100°C 90 Amps
ICM Pulsed Collector Current 1 450
SSOA Switching Safe Operating Area @ TJ = 150°C 450
PD Total Power Dissipation 830 Watts
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C

Static Electrical Characteristics

Symbol Characteristic / Test Conditions Min Typ Max Unit
V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) 1200 - -
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C) 4.5 5.5 6.5
Volts
Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C) 2.7 3.2 3.7
VCE(ON)
Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C) - 4.0 -
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 - - 150
ICES μA
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 - - TBD

IGES Gate-Emitter Leakage Current (VGE = ±20V) - - 900 nA

RG(int) Integrated Gate Resistor 1.75 2 3.25 Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
C 3- 2012
052-6291 Rev

Microsemi Website - http://www.microsemi.com

 Dynamic Characteristics APT150GT120JR
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance - 9300 -
VGE = 0V, VCE = 25V
Coes Output Capacitance - 1400 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 700 -
VGEP Gate-to-Emitter Plateau Voltage - 10 - V
Gate Charge
Qg Total Gate Charge VGE = 15V - 995 -
Qge Gate-Emitter Charge VCE= 600V - 110 - nC
Qgc Gate-Collector Charge IC = 150A - 595 -
7
TJ = 150°C, RG = 1.0Ω , VGE = 15V,
SSOA Switching Safe Operating Area 450 A
L = 100μH, VCE= 1200V
td(on) Turn-On Delay Time - 80 -
··tr Current Rise Time Inductive Switching (25°C) - N/A -
ns
td(off) Turn-Off Delay Time VCC = 800V - 570 -
VGE = 15V
tf Current Fall Time - 70 -
IC = 150A
Eon1 Turn-On Switching Energy 4
- TBD -
RG = 2.2Ω
5
Eon2 Turn-On Switching Energy TJ = +25°C - 24.3 - mJ
Eoff Turn-Off Switching Energy 6
- 12.7 -
td(on) Turn-On Delay Time - 80 -
tr Current Rise Time - 165 -
Inductive Switching (125°C) ns
td(off) Turn-Off Delay Time VCC = 800V - 635 -
tf Current Fall Time VGE = 15V - 75 -
Eon1 Turn-On Switching Energy 4 IC = 150A
- TBD -
RG = 2.2Ω
Eon2 Turn-On Switching Energy 5 - 33.5 - mJ
TJ = 125°C
Eoff Turn-Off Switching Energy 6
- 14.8 -

Thermal and Mechanical Characteristics

Symbol Characteristic / Test Conditions Min Typ Max Unit

R Junction to Case - - 0.15 °C/W

θJC
WT Package Weight - 29.2 - gm
- - 10 in·lbf
Torque Terminals and Mounting Screws.
- - 1.1 N·m
VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 - - Volts

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
C 3- 2012

7 RG is external gate resistance not including gate driver impedance.

Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6291 Rev
Typical Performance Curves APT150GT120JR
350 350
V
GE
= 15V 17V 15V
300 300
13V

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)
TJ= 25°C
250 250 12V
TJ= 125°C
200 200

11V
150 150
TJ= 150°C
100 100 10V

50 50 9V
8V
0 0
0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 25°C)
350 20
250μs PULSE I = 15-0A

VGE, GATE-TO-EMITTER VOLTAGE (V)

TEST<0.5 % DUTY C
CYCLE
18 T = 25°C
J
300
IC, COLLECTOR CURRENT (A)

16
VCE = 240V
250 14
VCE = 600V
12
200
10
VCE = 960V
150 8
TJ= -55°C
100 6

TJ= 25°C 4
50
2
TJ= 125°C
0 0
0 2 4 6 8 10 12 14 0 200 400 600 800 1000 1200
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate charge
6 7
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

TJ = 25°C. VGE = 15V.

250μs PULSE TEST 250μs PULSE TEST IC = 300A
<0.5 % DUTY CYCLE IC = 300A <0.5 % DUTY CYCLE
6
5

5
4 IC = 150A
IC = 150A
4
3 IC = 75A IC = 75A
3
2
2

1 1

0 0
8 10 12 14 16 0 25 50 75 100 125 150
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.10 150
VGS(TH), THRESHOLD VOLTAGE

1.05
125
IC, DC COLLECTOR CURRENT (A)

1.00
(NORMALIZED)

100
0.95
75
0.90
052-6291 Rev C 3- 2012

50
0.85

0.80 25

0.75 0
-.50 -.25 0 25 50 75 100 125 150 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE TC, Case Temperature (°C)
FIGURE 7, Threshold Voltage vs Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 Typical Performance Curves APT150GT120JR
100 750

td(OFF), TURN-OFF DELAY TIME (ns)

VGE = 15V
td(ON), TURN-ON DELAY TIME (ns) 80 600

VGE =15V,TJ=125°C

60 450
VGE =15V,TJ=25°C

40 300

20 VCE = 800V 150 VCE = 800V

TJ = 25°C, or 125°C
RG = 2.2Ω
RG = 2.2Ω
L = 100μH
L = 100μH
0 0
0 50 100 150 200 250 300 0 50 100 150 200 250 300
ICE, COLLECTOR-TO-EMITTER CURRENT (A) ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
400 250
RG = 2.2Ω, L = 100μH, VCE = 800V RG = 2.2Ω, L = 100μH, VCE = 800V

350
200
300
tr, RISE TIME (ns)

tr, FALL TIME (ns)

250
150
TJ = 25°C, VGE = 15V
200

100
150

100 TJ = 25 or 125°C,VGE = 15V

50 TJ = 125°C, VGE = 15V
50

0 0
0 50 100 150 200 250 300 0 50 100 150 200 250
ICE, COLLECTOR-TO-EMITTER CURRENT (A) ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
100 30
V = 800V V = 800V
EOFF, TURN OFF ENERGY LOSS (mJ)

CE CE
V = +15V V = +15V
Eon2, TURN ON ENERGY LOSS (mJ)

GE GE
R = 2.2Ω R = 2.2Ω
G 25 G
80
TJ = 125°C
20
60
TJ = 125°C
15

40
10
TJ = 25°C TJ = 25°C
20 5

0 0
0 50 100 150 200 250 300 0 40 80 120 160 200 240
ICE, COLLECTOR-TO-EMITTER CURRENT (A) ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn-Off Energy Loss vs Collector Current
300 120
V = 800V V = 800V
CE CE
V = +15V
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)

V = +15V GE Eon2,300A
GE
T = 125°C R = 2.2Ω
J G
250 100
Eon2,300A

200 80

150 60
052-6291 Rev C 3- 2012

100 40 Eoff,300A
Eoff,300A

50 Eoff,150A 20 Eon2,150A Eoff,150A

Eon2,150A
Eon2,75A Eon2,75A
Eoff,75A Eoff,75A
0 0
0 4 8 12 16 20 25 500 75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves APT150GT120JR
100,000 500

400

IC, COLLECTOR CURRENT (A)

C, CAPACITANCE (pF)
Cies
10,000
300

200
1,000

100
Coes
Cres
100 0
0 100 200 300 400 500 600 700 800 900 0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage FIGURE 18, Minimum Switching Safe Operating Area

0.16

D = 0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.14

0.12
0.7
0.1

0.08 0.5
Note:

0.06

P DM
t1
0.3
0.04 t2

t
0.1 Duty Factor D = 1 /t2
0.02
Peak T J = P DM x Z θJC + T C
0.05 SINGLE PULSE
0
10-4 10-3 10-2 10-1 0.1 1 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

30
T = 125°C
J
T = 75°C
FMAX, OPERATING FREQUENCY (kHz)

C
D = 50 %
25 V = 800V
75°C CE
R = 4.7Ω F max = min (f max, f max2)
G

20 0.05
f max1 =
T J (°C) T C (°C) t d(on) + tr + td(off) + tf
15 Pdiss - P cond
.0315 .0897 .0282 f max2 =
100°C E on2 + E off
Z EXT

Dissipated Powe r
(Watts ) 10 TJ - T C
.0175 .7078 12.16 Pdiss =
R θJC
Z EXT are the external therma l 5
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl y
the case to junction.
0
0 10
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Figure 20, Operating Frequency vs Collector Current
052-6291 Rev C 3-2013
 APT150GT120JR

10%
Gate Voltage TJ = 125°C
td(on)

APT100DQ120
90%
tr Collector Current

5%
V CC IC V CE
5% 10%

Collector Voltage

A
Switching Energy
D.U.T.

Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions

90% TJ = 125°C

Gate Voltage

Collector Voltage
90%
td(off)

tf
10%

0 Collector Current

Switching Energy

Figure 23, Turn-off Switching Waveforms and Definitions

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M 4
H=4.8 (.187) (4 places )
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157) 25.4 (1.000)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) * Emitter/Anode Collector/Cathode
15.1 (.594)
30.1 (1.185) * Emitter/Anode terminals ar e
30.3 (1.193) shorted internally. Current
38.0 (1.496) handling capability is equal
052-6291 Rev C 3-2013

38.2 (1.504) for either Emitter/Anode terminal .

* Emitter/Anode Gate

Dimensions in Millimeters and (Inches )