7MBR50SD120 IGBT Modules

PIM/Built-in converter with thyristor

and brake (S series)
1200V / 50A / PIM

Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit

Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous Tc=25°C 75 A
Inverter

Collector current Tc=80°C 50

ICP 1ms Tc=25°C 150 A
Tc=80°C 100
-IC 50 A
Collector power disspation PC 1 device 360 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current IC Continuous Tc=25°C 35 A
Tc=80°C 25
Brake

ICP 1ms Tc=25°C 70 A

Tc=80°C 50
Collector power disspation PC 1 device 180 W
Repetitive peak reverse voltage(Diode)
V RRM 1200 V
Repetitive peak off-state voltageV DRM 1600 V
Thyristor

Repetitive peak reverse voltage V RRM 1600 V

Average on-state current IT(AV) 50Hz/60Hz sine wave 50 A
Surge 0n-state current (Non-Repetitive)
ITSM Tj=125°C, 10ms half sine wave 530 A
Junction temperature Tjw 125 °C
Repetitive peak reverse voltage V RRM 1600 V
Converter

Average output current IO 50Hz/60Hz sine wave 50 A

Surge current (Non-Repetitive) IFSM Tj=150°C, 10ms 520 A
I2t (Non-Repetitive) I2t half sine wave 1352 A 2s
Junction temperature (except Thyristor) Tj +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation between terminal and copper base *2 Viso AC : 1 minute AC 2500 V
voltage between thermistor and others *3 AC 2500 V
Mounting screw torque 1.7 *1 N·m

*1 Recommendable value : 1.3 to 1.7 N·m (M4)

*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
IGBT Module 7MBR50SD120

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES VCE=1200V, VGE=0V 250 µA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 200 nA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=50mA 5.5 7.2 8.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, Ic=50A chip 2.1 V
terminal 2.3 2.7
Inverter

Input capacitance Cies VGE=0V, VCE=10V, f=1MHz 6000 pF

Turn-on time ton V CC =600V 0.35 1.2 µs
tr IC=50A 0.25 0.6
Turn-off toff VGE=±15V 0.45 1.0
tf RG=24Ω 0.08 0.3
Forward on voltage VF IF=50A chip 2.3 V
terminal 2.5 3.3
Reverse recovery time of FRD trr IF=50A 350 ns
Zero gate voltage collector current ICES VCES=1200V, VGE=0V 250 µA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 200 nA
Collector-Emitter saturation voltage VCE(sat) IC=25A, VGE=15V chip 2.1 V
terminal 2.25 2.7
Brake

Turn-on time ton V CC =600V 0.35 1.2 µs

tr IC=25A 0.25 0.6
Turn-off time toff VGE=±15V 0.45 1.0
tf RG=51Ω 0.08 0.3
Reverse current IRRM V R=1200V 250 µA
off-state current IDM V DM =1600V 1.0 mA
Reverse current IRRM V RM =1600V 1.0 mA
Gate trigger current IGT VD=6V, IT=1A 100 mA
Thyristor

Gate trigger voltage V GT VD=6V, IT=1A 2.5 V

On-state voltage V TM ITM=50A chip 1.0 1.15 V
terminal 1.1
Forward on voltage V FM IF=50A chip 1.1 V
Converter

terminal 1.2 1.5

Reverse current IRRM V R=1600V 250 µA
Resistance R T=25°C 5000 Ω
Thermistor

T=100°C 465 495 520

B value B T=25/50°C 3305 3375 3450 K

Thermal resistance Characteristics

Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT 0.35
Inverter FWD 0.75
Thermal resistance ( 1 device ) Rth(j-c)
Brake IGBT 0.69
Thyristor 0.56 °C/W
Converter Diode 0.50
Contact thermal resistance * Rth(c-f) With thermal compound 0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module 7MBR50SD120
Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.) Tj= 125°C (typ.)
120 120

VGE= 20V 15V 12V VGE= 20V 15V 12V

100 100
Collector current : Ic [ A ]

Collector current : Ic [ A ]
80 80

10V
10V
60 60

40 40

20 20

8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) Tj= 25°C (typ.)
120 10

Tj= 25°C Tj= 125°C

100
8
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]

80

60

40
Ic= 100A

Ic= 50A
2
20 Ic= 25A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V, Ic=50A, Tj= 25°C
20000 1000 25

10000

800 20
Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

Cies

600 15

1000
400 10

Coes
Cres
200 5

100 0 0
0 5 10 15 20 25 30 35 0 100 200 300 400 500

Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]

IGBT Module 7MBR50SD120

[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 24Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg= 24Ω, Tj= 125°C
1000 1000

toff

toff
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

500 500

ton
ton

tr
tr

tf

100 100
tf

50 50
0 20 40 60 80 0 20 40 60 80

Collector current : Ic [ A ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=24Ω
5000 14

ton Eon(125°C)
12
toff
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]

tr
10

1000
Eon(25°C)
8

500

6 Eoff(125°C)

4 Eoff(25°C)
Err(125°C)

100 tf 2
Err(25°C)

50 0
10 50 100 500 0 20 40 60 80 100

Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C +VGE=15V, -VGE<=15V, Rg>=24Ω, Tj<=125°C
40 600

500
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eon

30
Collector current : Ic [ A ]

400

SCSOA
(non-repetitive pulse)
20 300

200

10
Eoff
100
RBSOA
(Repetitive pulse)
Err
0 0
10 50 100 500 0 200 400 600 800 1000 1200 1400

Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]

IGBT Module 7MBR50SD120

[ Inverter ]
[ Inverter ]
Reverse recovery characteristics (typ.)
Forward current vs. Forward on voltage (typ.)
Vcc=600V, VGE=±15V, Rg=24Ω
120 300

Tj=125°C Tj=25°C
100

trr(125°C)

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
100
Forward current : IF [ A ]

80

trr(25°C)

60

40 Irr(125°C)

Irr(25°C)
20

0 10
0 1 2 3 4 0 20 40 60 80

Forward on voltage : VF [ V ] Forward current : IF [ A ]

[ Converter ] [ Thyristor ]
Forward current vs. Forward on voltage (typ.) On-state current vs. On-state voltage (typ.)
120 200

Tj= 25°C Tj= 125°C Tjw= 125°C Tjw= 25°C

100
100
Instantaneous on-state current [ A ]
Forward current : IF [ A ]

80

60

10
40

20

0 2
0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0

Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ]

[ Thermistor ]
Transient thermal resistance Temperature characteristic (typ.)
5 200

100
Thermal resistanse : Rth(j-c) [ °C/W ]

1
FWD[Inverter]
IGBT[Brake]
Resistance : R [ kΩ ]

Thyristor
Conv. Diode 10

IGBT[Inverter]

0.1

0.01 0.1
0.001 0.01 0.1 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Pulse width : Pw [ sec ] Temperature [ °C ]

IGBT Module 7MBR50SD120

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.) Tj= 125°C (typ.)
60 60

VGE= 20V 15V 12V VGE= 20V 15V 12V

50 50
Collector current : Ic [ A ]

Collector current : Ic [ A ]
40 40

10V
10V
30 30

20 20

10 10

8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) Tj= 25°C (typ.)
60 10

Tj= 25°C Tj= 125°C

50
8
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]

40

30

20
Ic= 50A

Ic= 25A
2
10 Ic= 12.5A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V, Ic=25A, Tj= 25°C
10000 1000 25

800 20
Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

Cies

600 15

1000

400 10

200 5
Coes

Cres

100 0 0
0 5 10 15 20 25 30 35 0 50 100 150 200 250

Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]

IGBT Module 7MBR50SD120

Outline Drawings, mm

Marking : White
Marking : White

Equivalent Circuit Schematic

[ Converter ] [ Thyristor ] [ Brake ] [ Inverter ] [ Thermistor ]

21
(P) 26 22(P1)

8 9
25 20 18 16
(Gu) (Gv ) (Gw)

1(R) 2(S) 3(T)

19(Eu) 17(Ev ) 15(Ew)
7(B) 4(U) 5(V) 6(W)

14(Gb) 13(Gx) 12(Gy ) 11(Gz)

23(N) 24(N1) 10(En)