7MBP50RJ120

IGBT IPM R-series 1200V class 1200V / 50A 7 in one-package

Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs.
· Low power loss and soft switching.
· High performance and high reliability IGBT with overheating protection.
· Both P-side and N-side alarm output available.
· Higher reliability because of a big decrease in number of parts in
built-in control circuit.

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Min. Max.
Bus voltage DC VDC 0 900 V
Surge VDC(surge) 0 1000 V
Short operating V SC 200 800 V
Collector-Emitter voltage *1 VCES 0 1200 V
Collector current DC IC - 50 A
Inverter

1ms ICP - 100 A

Duty=98.0% *2 -IC - 50 A
Collector power dissipation One transistor *3 PC - 357 W
Collector current DC IC - 25 A
1ms ICP - 50 A
Brake

Forward Current of Diode IF - 25 A

Collector power dissipation One transistor *3 PC 198 W
Supply voltage of Pre-Driver *4 V CC -0.5 20 V
Input signal voltage *5 Vin -0.5 Vcc+0.5 V
Input signal current Iin - 3 mA
Alarm signal voltage *6 VALM -0.5 Vcc V
Alarm signal current *7 IALM - 20 mA
Junction temperature Tj - 150 °C
Operating case temperature Topr -20 100 °C
Storage temperature Tstg -40 125 °C
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Viso - AC2500 V
Screw torque Terminal (M5) - 3.5 N·m
Mounting (M5) - 3.5 N·m

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB.

*2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.85(50x3.0)x100=98.0%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.35=357W [Inverter]

Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

7MBP50RJ120 IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
Collector current at off signal input ICES VCE=1200V Vin terminal open. - - 1.0 mA
Collector-Emitter saturation voltage VCE(sat) Ic=50A Terminal - - 2.6 V
Inverter

Chip - - -
Forward voltage of FWD VF -Ic=50A Terminal - - 3.0 V
Chip - - -
Collector current at off signal input ICES VCE=1200V Vin terminal open. - - 1.0 mA
Brake

Collector-Emitter saturation voltage VCE(sat) Ic=25A Terminal - - 2.6 V

Forward voltage of Diode VF -Ic=25A Terminal - - 3.3
Turn-on time ton VDC=600V,Tj=125°C 1.2 - - µs
Turn-off time toff IC=50A Fig.1, Fig.6 - - 3.6
Reverse recovery time trr VDC=600V, IF=50A Fig.1, Fig.6 - - 0.3

Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit) Iccp Switching Trequency : 0 to 15kHz - - 18 mA
Supply current of N-line side pre-driver ICCN Tc=-20 to 125°C Fig.7 - - 65 mA
Input signal threshold voltage (on/off) Vin(th) ON 1.00 1.35 1.70 V
OFF 1.25 1.60 1.95 V
Input zener voltage VZ Rin=20k ohm - 8.0 - V
Alarm signal hold time tALM Tc=-20°C Fig.2 1.1 - - ms
Tc=25°C Fig.2 - 2.0 - ms
Tc=125°C Fig.2 - - 4.0 ms
Limiting Resistor for Alarm RALM 1425 1500 1575 ohm

Protection Section ( Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Over Current Protection Level of Inverter circuit IOC Tj=125°C 75 - - A
Over Current Protection Level of Brake circuit IOC Tj=125°C 38 - - A
Over Current Protection Delay time tDOC Tj=125°C - 10 - µs
SC Protection Delay time tSC Tj=125°C Fig.4 - - 12 µs
IGBT Chip Over Heating TjOH Surface of IGBT chips 150 - °C
Protection Temperature Level
Over Heating Protection Hysteresis TjH - 20 - °C
Over Heating Protection TcOH VDC=0V, IC=0A 110 - 125 °C
Protection Temperature Level CaseTemperature
Over Heating Protection Hysteresis TcH - 20 - °C
Under Voltage Protection Level V UV 11.0 - 12.5 V
Under Voltage Protection Hysteresis VH 0.2 0.5 - V
Thermal characteristics( Tc=25°C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance *8 Inverter IGBT Rth(j-c) - - 0.35 °C/W
FWD Rth(j-c) - - 0.85 °C/W
Brake IGBT Rth(j-c) - - 0.63 °C/W
Case to fin thermal resistance with compound Rth(c-f) - 0.05 -
*8 : (For 1 device, Case is under the device)
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item Condition Min. Typ. Max. Unit
Common mode rectangular noise Pulse width 1µs, polarity ±,10minuets
±2.0 - - kV
Judge : no over-current, no miss operating
Common mode lightning surge Rise time 1.2µs, Fall time 50µs
±5.0 - - kV
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage V DC - - 800 V
Operating Supply Voltage of Pre-Driver V CC 13.5 15.0 16.5 V
Screw torque (M5) - 2.5 - 3.0 Nm
Weight
Item Symbol Min. Typ. Max. Unit
Weight Wt - 450 - g
7MBP50RJ120 IGBT-IPM

Vin Vin(th) On Vin(th)

trr
90%
50%

Ic 90%
10%

ton toff

Figure 1. Switching Time Waveform Definitions

off off
/Vin on on
Gate On
Vge (Inside IPM ) Gate Off

Fault (Inside IPM ) normal

/ALM alarm
tALM > Max. tALM > Max. t ALM 2ms(typ.)
1 2 3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc

Ic Ic Ic

I ALM I ALM I ALM

Figure.4 Definition of tsc

Vcc
PP
20 k L
IPM
IPM DC
DC + 300V
+
15V Vin
CT HCPL
-
VccU P 4504
GND
N
20k Ic
DC VinU IPM
15V U
SW1 AC200V
GNDU Figure 6. Switching Characteristics Test Circuit
V +
Vcc
20k
DC VinX W Icc Vcc
15V A P
4700p
SW2 GND Noise
N IPM U
DC
Vin
15V V
P.G
Earth Cooling +8V
Fin fsw W
GND
N

Figure 5. Noise Test Circuit

Figure 7. Icc Test Circuit
7MBP50RJ120 IGBT-IPM

Block diagram
P

VccU 4

VinU 3
Pre- Driver
ALMU 2
RALM 1.5k
Vz
GNDU 1 U

VccV 8

VinV 7
Pre - Driver
ALMV 6
RALM 1.5k
Vz
GNDV 5 V

VccW 12

VinW 11

Pre - Driver
ALMW 10

RALM 1.5k
Vz
GNDW 9 W

Vcc 14

VinX 16

Pre - Driver

Vz
GND 13

VinY 17

Pre - Driver

Vz

VinZ 18
Pre-drivers include following functions
Pre - Driver
1.Amplifier for driver
Vz
2.Short circuit protection
B
3.Under voltage lockout circuit
VinDB 15

Pre - Driver
4.Over current protection
ALM 19

RALM 1.5k
Vz 5.IGBT chip over heating protection
N

Over heating protection

circuit

Outline drawings, mm

109 +
_1

95 +
_0 . 3

13.8 +
_0.3
66.44
+
_0 . 2 +
_0.2 +
_0.2 +
_ 0 . 25
3.22 +_ 0 . 3 10 10 10 12 /5
4- O
6 +_ 0 . 1 5 6 +_ 0 . 1 5 6 +_ 0 . 1 5 2 +_ 0 . 1
+_ 0 . 3
2

B
20
+_ 0 . 3
+_ 1
88

74

10

P
20

N
W V U
17
0.5

0.5 24 26 26

19- 0.5 / 2.5

2- O

6 - M5
9
7

+0 . 6
31 - 0 . 3
12.5
+1 . 0
-0.3

+1 . 0
-0.3
22

22
17

17
+1 . 0
-0.2

Mass : 450g
8
7MBP50RJ120 IGBT-IPM

Characteristics
Control circuit characteristics (Respresentative)

Input signal threshold voltage

Power supply curr ent vs. Switching frequency T j= 25 °C
vs. P ower s upply voltage
Tj=100 °C Tj= 125° C
40 2.5
V cc = 17V
P-side
35
N-side

Input s ignal thres hold voltage

V cc = 15V
Powe r supply current : Icc (mA)

2
30

: Vin(on), Vin(off) (V)

V cc = 13V } Vin(off)

25 1.5 } Vin(on)

20

1
15
V cc = 17V
10 V cc = 15V
V cc = 13V 0.5

0 0

0 5 10 15 20 25 12 13 14 15 16 17 18
Po we r s up ply volta ge : Vc c ( V)
Sw itc hing frequenc y : fs w (kHz)

U nder voltage vs. Junction temperature U nde r voltage hysterisis vs. Jnction tempe ra tur e
14 1

12
0.8
Un der vo ltage hysterisis : VH (V)
Under voltag e : VUVT (V)

10

8 0.6

6
0.4

0.2
2

0 0
20 40 60 80 1 00 120 1 40 20 40 60 80 1 00 120 1 40

Junction tem perat ure : Tj (°C) Junc tion tem pe rat ure : Tj (°C)

O ve r heating char acte ris tic s

Alar m ho ld time vs . P owe r s upply voltage Tc OH ,TjOH ,T cH ,TjH vs. Vc c
3
2 00
O ver heating pro tection : TcO H,TjO H (°C)

2.5 TjO H
Alarm hold time : tAL M (mSe c)

O H hysterisis : TcH,TjH (°C)

Tj=1 25 °C
1 50
2
T j= 25° C T cO H

1.5
1 00

50
0.5
T cH,TjH

0
0
12 13 14 15 16 17 18
12 13 14 15 16 17 18
Po we r sup ply volt age : Vc c ( V) Po we r s up ply vo lta ge : Vc c ( V)
7MBP50RJ120 IGBT-IPM

Main circuit characteristics (Respresentative)

Co lle ctor curr ent vs. Colle ctor -E mitte r voltage

Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=2 5° C (Te rm inal)
Tj=25 °C (C hip)
80
80 Vcc= 15V
V cc= 15 V
Vcc= 17 V
V cc = 17V 70
70
V cc = 13V
V cc= 13 V

Co lle cto r Cur re nt : Ic ( A)

60
Co lle cto r Cur rent : Ic (A)

60
50
50
40
40

30
30
20
20
10
10
0
0
0 0 .5 1 1 .5 2 2.5 3
0 0 .5 1 1.5 2 2.5 3
C ollector -Emit ter vo lta ge : V ce ( V)
C ollector -Emit ter vo lta ge : Vce (V)

Co lle ctor curr ent vs. Colle ctor -E mitte r voltage

Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=12 5 °C (Term inal)
Tj=12 5° C (C hip)
80
80 V cc= 15 V
Vcc= 15 V
V cc= 17 V 70 Vcc= 17 V
70
Vcc= 13V V cc = 13V
Colle ct or Curre nt : I c ( A)

60
Co lle cto r Curre nt : Ic ( A)

60

50
50

40
40

30
30

20
20

10
10

0
0
0 0 .5 1 1.5 2 2.5 3
0 0 .5 1 1.5 2 2.5 3
C ollector -Emit ter vo lta ge : Vce (V)
C olle ct or- Emitt er vo lta ge : V ce ( V)

Fo rward curre nt vs. Fo rwar d voltage Fo rward curre nt vs. Fo rwar d voltage
(C hip) (T ermina l)
80 80
25°C
1 25 °C
70 70
125 °C 25° C

60 60
F or wa rd Current : I f (A)

Forw ard Current : If (A)

50 50

40 40

30 30

20 20

10 10

0 0

0 0.5 1 1 .5 2 2 .5 0 0 .5 1 1.5 2 2.5 3

F or wa rd vo lta ge : V f ( V) F or wa rd vo ltag e : V f ( V)
7MBP50RJ120 IGBT-IPM

Switc hing Loss vs. C ollector C urrent Switc hing Los s vs. C ollec tor C ur re nt
Edc=6 00 V,Vc c=15V ,Tj=2 5 °C Edc=600V,Vcc=15V,Tj=125 °C
25 25
Sw itching loss : Eon,E off,Err (mJ/cycle)

S wit ching lo ss : E on,E off,Er r (mJ/c yc le)

E on
20 20

15 15

Eon
10 10 Eoff

Eo ff

5 5
E rr
Err

0 0

0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80

Colle ctor current : Ic (A) Colle ctor cur rent : Ic (A)

Reversed bias ed safe operating area

Trans ient thermal resistance
Vcc=15V,Tj 125 ° C
FW D
70 0 1
Thermal re sistance : Rt h(j-c) (° C/ W )

60 0
I GB T
C ollector cu rren t : Ic (A)

50 0

40 0

SCS O A 0 .1
30 0 (non-repetitive pu ls e)

20 0

10 0
RBS O A
(R e petit ive pu lse)
0 0. 01
0 20 0 40 0 600 800 1 000 1 20 0 140 0 0 .001 0.01 0 .1 1

C ollector-E m itter volta ge : V ce (V) P ulse width :P w (se c)

Power de ra ting for F W D

Power dera ting fo r IGB T
(pe r devic e)
(per device)
1 50
400
Collec ter Pow er Dissipation : Pc (W )

350
Collecter Pow er Dissipation : Pc (W )

1 25

300
1 00
250

75
200

150 50

100
25
50

0
0
0 20 40 60 80 1 00 120 1 40 1 60
0 20 40 60 80 1 00 120 1 40 160
Case Temper ature : Tc (°C)
Case Tem pe ratur e : Tc (°C)
7MBP50RJ120 IGBT-IPM

S witching time vs . C ollec to r c ur re nt

S witching time vs. C ollec to r c ur rent
E dc =600V ,V cc =1 5V,Tj=12 5 ° C
Edc=6 00V,Vcc=15V ,Tj=25 °C
1 00 00 1 00 00

t off
Switching time : ton,toff,tf (nSec)

Sw itching tim e : to n, tof f,tf (nSe c)

t off
ton
ton
10 00 10 00

tf

tf
1 00 1 00

10 10

0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
C ollect or curre nt : Ic (A)
C ollect or curre nt : Ic (A)

Reverse re co ve ry char acte ris tic s

trr,Irr vs. IF
10 00
Rever se re co very t im e : trr (nSec)
Reverse recover y c urr ent : Irr (A)

t rr1 25 °C

t rr25° C

1 00

I rr1 25 °C

Irr 25 °C

10
0 10 20 30 40 50 60 70 80
For ward current : IF(A)
7MBP50RJ120 IGBT-IPM
Dynamic Brake Characteristics (Representative)

C ollector current vs. Collector-E mitte r voltage C o lle ctor current vs. Colle ctor-Emitter voltage
Tj=2 5°C ( Terminal) Tj=12 5°C( T ermina l)
40 40 Vcc= 15 V
Vcc= 15 V
Vcc= 17 V Vcc= 17 V
35 35
V cc = 13V
Co llecto r Cur rent : Ic (A)

Colle ct or Curre nt : I c ( A)
30 30
Vcc= 13V
25 25

20 20

15 15

10 10

5 5

0 0
0 0.5 1 1.5 2 2.5 3
0 0 .5 1 1.5 2 2.5 3
C olle ct or- Emitt er voltage : V ce (V) C olle ct or- Emitt er vo lta ge : V ce ( V)

Revers ed bias ed safe operating area

Tran sien t the rm a l res is ta nc e V cc=1 5V,Tj 125 °C
1 35 0
IG B T
T hermal resistance : R th(j-c) (°C/W )

30 0
C ollector cu rren t : Ic (A)

25 0

20 0
0 .1 S C S OA
15 0 (no n-re peti tive pu ls e)

10 0

50
RBSOA
(R e peti tive pu ls e)
0.01 0

0 .00 1 0.01 0 .1 1 0 20 0 40 0 600 800 1 000 1 20 0 140 0

P ulse wid th :P w (se c) C ollector-E m itte r volta ge : V ce (V)

Power dera ting fo r IGB T

(per device)
2 50
Co llecte r P ow er Diss ipa tio n : Pc ( W)

2 00

1 50

1 00

50

0 20 40 60 80 1 00 1 20 140 1 60

Case Temper ature : Tc (°C)