7MBR15SA120 IGBT Modules

IGBT MODULE (S series)

1200V / 15A / PIM

Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit

Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rat ing Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous Tc=25°C 25 A
Inverter

Collector current Tc=80°C 15

ICP 1ms Tc=25°C 50 A
Tc=80°C 30
-IC 15 A
Collector power dissipation PC 1 device 110 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current IC Continuous Tc=25°C 25 A
Tc=80°C 15
Brake

ICP 1ms Tc=25°C 50 A

Tc=80°C 30
Collector power dissipation PC 1 device 110 W
Repetitive peak reverse voltage VRRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Converter

Average output current IO 50Hz/60Hz sine wave 15 A

Surge current (Non-Repetitive) IFSM Tj=150°C, 10ms 155 A
I 2t (Non-Repetitive) I2 t half sine wave 120 A 2s
Operating junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation between terminal and copper base *2 Viso AC : 1 minute AC 2500 V
voltage between thermistor and others *3 AC 2500
Mounting screw torque 3.5 *1 N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT Modules 7MBR15SA120

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES VCE=1200V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 0.2 µA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=15mA 5.5 7.2 8.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, Ic=15A chip 2.1 V
terminal 2.15 2.6
Input capacitance Cies VGE=0V, VCE=10V, f=1MHz 1800 pF
Inverter

Turn-on time ton VCC=600V 0.35 1.2 µs

tr IC=15A 0.25 0.6
tr(i) VGE=±15V 0.1
Turn-off toff RG=82Ω 0.45 1.0
tf 0.08 0.3
Forward on voltage VF IF=15A chip 2.3 V
terminal 2.35 3.2
Reverse recovery time of FRD trr IF=15A 0.35 µs
Zero gate voltage collector current ICES VCES=1200V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 0.2 µA
Collector-Emitter saturation voltage VCE(sat) IC=15A, VGE=15V chip 2.1 V
Brake

terminal 2.2 2.6

Turn-on time ton VCC=600V 0.35 1.2 µs
tr IC=15A 0.25 0.6
Turn-off time toff VGE=±15V 0.45 1.0
tf RG=82Ω 0.08 0.3
Reverse current IRRM VR=1200V 1.0 mA
Forward on voltage VFM IF=15A chip 1.1 V
Converter

terminal 1.2 1.5

Reverse current IRRM VR=1600V 1.0 mA
Resistance R T=25°C 5000 Ω
Thermistor

T=100°C 465 495 520

B value B T=25/50°C 3305 3375 3450 K

Thermal resistance Characteristics

Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT 1.14
Inverter FWD 1.85
Thermal resistance ( 1 device ) Rth(j-c)
Brake IGBT 1.14 °C/W
Converter Diode 1.30
Contact thermal resistance * Rth(c-f) With thermal compound 0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

[Converter] [B ra k e ] [In v er ter ] [T h e rm is to r]

21(P) 2 2 (P 1 )

8 9

2 0 (G u) 1 8 (G v) 1 6 (G w )

1(R) 2(S) 3(T) 1 9 (E u ) 1 7 (E v ) 1 5 (E w )

7 (B ) 4 (U ) 5 (V ) 6 (W )

1 4 (G b) 1 3 (G x) 1 2 (G y) 1 1 (G z)
1 0 (E n )

23(N) 2 4 (N 1 )
IGBT Modules 7MBR15SA120
Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
35 35

15V 15V
VGE= 20V 12V VGE= 20V 12V
30 30

25 25
Collector current : Ic [ A ]

Collector current : Ic [ A ]
20 20 10V
10V

15 15

10 10

5 5
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) o
Tj= 25 C (typ.)
35 10

o o
Tj= 25 C Tj= 125 C
30
8
Collector - Emitter voltage : VCE [ V ]

25
Collector current : Ic [ A ]

6
20

15
4

Ic= 30A
10
Ic= 15A
2
5 Ic= 7.5A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
o o
VGE=0V, f= 1MHz, Tj= 25 C Vcc=600V, Ic=15A, Tj= 25 C
5000 1000 25

800 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Cies
Gate - Emitter voltage : VGE [ V ]

1000
600 15

500

400 10

Coes
200 5
100
Cres

50 0 0
0 5 10 15 20 25 30 35 0 50 100 150
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
IGBT Modules 7MBR15SA120

[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=82Ω, Tj=25°C Vcc=600V, VGE=±15V, Rg=82Ω, Tj=125°C
1000 1000

toff

toff
500 500
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

ton
ton
tr
tr

tf

100 100
tf

50 50
0 5 10 15 20 25 0 5 10 15 20 25
Collector current : Ic [ A ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C Vcc=600V, VGE=±15V, Rg=82Ω
5000 5

4
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]

o
Eon(125 C)

1000
3

o
500 Eon(25 C)
toff
2
o
Eoff(125 C)
ton
o
Eoff(25 C)
tr 1
o
Err(125 C)
100

tf o
Err(25 C)
50 0
30 100 1000 0 5 10 15 20 25 30
Gate resistance : Rg [ Ω] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area
Vcc=600V, Ic=15A, VGE=±15V, Tj=125°C +VGE=15V, -VGE=
<15V, Rg>82Ω, Tj<125°C
= =
12 40

10 Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

30

8
Collector current : Ic [ A ]

6 20

Eoff 10

Err
0 0
30 100 1000 0 200 400 600 800 1000 1200 1400
Gate resistance : Rg [ Ω] Collector - Emitter voltage : VCE [ V ]
IGBT Modules 7MBR15SA120

[ Inverter ] [ Inverter ]
Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=82 Ω
35 300

o o
Tj=125 C Tj=25 C o
30 trr(125 C)

100
25

Reverse recovery time : trr [ nsec ]

o

Reverse recovery current : Irr [ A ]

trr(25 C)
Forward current : IF [ A ]

20 50

15

10

o
Irr(125 C)
10
5
o
Irr(25 C)

0 5
0 1 2 3 4 0 10 20
Forward on voltage : VF [ V ] Forward current : IF [ A ]

[ Converter ]
Forward current vs. Forward on voltage (typ.)

35

o o
Tj= 25 C Tj= 125 C
30

25
Forward current : IF [ A ]

20

15

10

0
0.0 0.4 0.8 1.2 1.6 2.0
Forward on voltage : VFM [ V ]

[ Thermistor ]
Transient thermal resistance Temperature characteristic (typ.)

5 200

100
FWD[Inverter]
Conv. Diode
1
Thermal resistanse : Rth(j-c) [ C/W ]

IGBT
[Inverter,Brake]
o

Resistance : R [ k Ω ]

10

0.1

0.01 0.1
0.001 0.01 0.1 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ] Temperature [
o
C]
IGBT Modules 7MBR15SA120

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
35 35

15V 15V
VGE= 20V 12V VGE= 20V 12V
30 30

25 25
Collector current : Ic [ A ]

Collector current : Ic [ A ]
20 20 10V
10V

15 15

10 10

5 5
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) o
Tj= 25 C (typ.)
35 10

o o
Tj= 25 C Tj= 125 C
30
8
Collector - Emitter voltage : VCE [ V ]

25
Collector current : Ic [ A ]

6
20

15
4

10 Ic= 30A

Ic= 15A
2
5 Ic= 7.5A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
o
VGE=0V, f= 1MHz, Tj= 25
o
C Vcc=600V, Ic=15A, Tj= 25 C
5000 1000 25

800 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Cies
Gate - Emitter voltage : VGE [ V ]

1000
600 15

500

400 10

Coes
200 5
100
Cres

50 0 0
0 5 10 15 20 25 30 35 0 50 100 150
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
IGBT Modules 7MBR15SA120

Outline Drawings, mm