6MBI75UC-120

IGBT Module U-Series 1200V / 75A 6 in one-package

Features Applications
· High speed switching · Inverter for Motor drive
· Voltage drive · AC and DC Servo drive amplifier
· Low inductance module structure · Uninterruptible power supply
· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol Conditions Rating Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltaga VGES ±20 V
Collector current IC Continuous Tc=25°C 100 A
Tc=80°C 75
ICp 1ms Tc=25°C 200
Tc=80°C 150
-IC 75
-IC pulse 150
Collector Power Dissipation PC 1 device 390 W
Junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125
Isolation voltage between terminal and copper base *1 Viso AC:1min. 2500 VAC
Screw Torque Mounting *2 3.5 N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item Symbols Conditions Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES VGE=0V, VCE=1200V – – 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V – – 200 nA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=75mA 4.5 6.5 8.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=75A Tj=25°C – 1.75 2.10 V
(chip) Tj=125°C – 2.00 –
Input capacitance Cies VCE=10V, VGE=0V, f=1MHz – 8 – nF
Turn-on time ton VCC =600V – 0.36 1.20 µs
tr IC=75A – 0.21 0.60
tr(i) VGE=±15V – 0.03 –
Turn-off time toff RG=9.1 Ω – 0.37 1.00
tf – 0.07 0.30
Forward on voltage VF VGE=0V Tj=25°C – 1.60 1.90 V
(chip) IF=75A Tj=125°C – 1.70 –
Reverse recovery time t rr IF=75A – – 0.35 µs
Lead resistance, terminal-chip*3 R lead Without shunt resistance – 5.7 – mΩ
Shunt resistance R shunt Resistance of R1,R2,R3 *4 – 2.4 –
*3: Biggest internal terminal resistance among arm.
*4: R1, R2,R3 is shown in equivalent circuit (p5)

Thermal resistance characteristics

Items Symbols Conditions Characteristics Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) IGBT – – 0.32 °C/W
Rth(j-c) FWD – – 0.49 °C/W
Contact Thermal resistance Rth(c-f)*5 With thermal compound – 0.05 – °C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
6MBI75UC-120 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 125°C / chip

200 200

VGE=20V 15V 12V VGE=20V 15V 12V

150 150
Collector current : Ic [A]

Collector current : Ic [A]

100 100
10V 10V

50 50

8V
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip

200 10
Collector - Emitter voltage : VCE [ V ]

T j=25°C T j=125°C 8
150
Collector current : Ic [A]

100

50 Ic=150A
2
Ic=75A
Ic=37.5A

0 0
0 1 2 3 4 5 10 15 20 25

Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

VGE=0V, f= 1M Hz, Tj= 25°C Vcc=600V, Ic=75A, Tj= 25°C

100.0
[ 5V/div ]
Collector-Emitter voltage : VCE [ 200V/div ]
Capacitance : Cies, Coes, Cres [ nF ]

Cies
10.0 VGE
Gate - Emitter voltage : VGE

Cres
1.0

Coes
VCE
0
0.1
0 10 20 30 0 100 200 300 400

Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ]

6MBI75UC-120 IGBT Module

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125°C

10000 10000
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000 1000
toff
ton ton
toff tr
tr

100 100
tf
tf

10 10
0 50 100 150 0 50 100 150
Collector current : Ic [ A ] Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=9.1Ω

10000 15
Eoff(125°C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eon(125°C)
Switching time : ton, tr, toff, tf [ nsec ]

ton
toff
1000 10
Eoff(25°C)

Eon(25°C)
tr

100 5
Err(125°C)
tf
Err(25°C)

10 0
1 10 100 1000 0 50 100 150

Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C

70 200
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

60
Eon
150
50
Collector current : Ic [ A ]

40
100
30

20
Eoff 50

10
Err
0 0
1 10 100 1000 0 250 500 750 1000 1250
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
6MBI75UC-120 IGBT Module

Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, Rg=9.1Ω

200 1000

T j=25°C

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]
150
Forward current : IF [ A ]

trr (125°C)
T j=125°C trr (25°C)
100 100
Irr (125°C)
Irr (25°C)

50

0 10
0 1 2 3 4 0 50 100 150
Forward on voltage : VF [ V ] Forward current : IF [ A ]

Transient thermal resistance (max.)

10.000
Thermal resistanse : Rth(j-c) [ °C/W ]

1.000
FWD
IGBT

0.100

0.010

0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
6MBI75UC-120 IGBT Module

Outline Drawings, mm

M632

( ) shows reference dimension.

Equivalent Circuit Schematic

31,32 15,16

27 28 21 22 17 18
1 5 9
2 6 10
U V W
R1 29,30 R2 23,24 R3 19,20

3 7 11
4 8 12
33,34 13,14