IGBT MODULE ( N series ) n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200 V
Gate -Emitter Voltage VGES ± 20 V
Continuous IC 200
Collector 1ms IC PULSE 400
A
Current Continuous -IC 200
1ms -IC PULSE 400
Max. Power Dissipation PC 1500 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. Vis 2500 V
Mounting *1 3.5
Screw Torque Nm
Terminals *2 4.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 2.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 30 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=200mA 4.5 7.5 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=200A 3.3 V
Input capacitance Cies VGE=0V 32000
Output capacitance Coes VCE=10V 11600 pF
Reverse Transfer capacitance Cres f=1MHz 10320
tON VCC=600V 0.65 1.2
Turn-on Time
tr IC=200A 0.25 0.6
µs
tOFF VGE=± 15V 0.85 1.5
Turn-off Time
tf RG=4.7Ω 0.35 0.5
Diode Forward On-Voltage VF IF=200A VGE=0V 3.0 V
Reverse Recovery Time trr IF=200A 350 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.085
Thermal Resistance Rth(j-c) Diode 0.18 °C/W
Rth(c-f) With Thermal Compound 0.025
 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
T j=25°C T j=125°C
500 500

V GE =20V,15V,12V,10V V GE =20V,15V,12V,10V,
400 400
[A]

[A]
C

C
Collector current : I

300 300

Collector current : I
200 200
8V

8V
100 100

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

T j=25°C T j=125°C

10 10
[V]

[V]
CE

CE

8 8
Collector-Emitter voltage : V

Collector-Emitter voltage : V

6 6

4 IC= 4 IC=
400A 400A
200A 200A
2 100A 2
100A

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : V GE [V] Gate-Emitter voltage : V GE [V]

Switching time vs. Collector current Switching time vs. Collector current
V CC =600V, R G =4.7 Ω , V GE =±15V, T j=25°C V CC =600V, R G =4.7 Ω , V GE =±15V, Tj=125°C
1000
t off t off
t on 1000
t on
tf
, t r , t off , t f [nsec]

, t r , t off , t f [nsec]

tf
tr
tr

100
on

on

100
Switching time : t

Switching time : t

10 10
0 100 200 300 400 0 100 200 300 400
Collector current : I C [A] Collector current : I C [A]
 Switching time vs. RG Dynamic input characteristics
V CC =600V, I C =200A, V GE =±15V, T j=25°C T j=25°C
1000 25

t OFF V CC =400V

[V]
600V
[nsec]

t ON 800 20

CE
800V
ON, t r, t OFF , t f

Collector-Emitter voltage : V
1000
600 15

tr

tf 400 10
Switching time : t

200 5
100

0
0
10 0 500 1000 1500 2000 2500

Gate resistance : R G [ Ω ] Gate charge : Q G [nC]

Forward current vs. Forward voltage Reverse recovery characteristics

V GE = O V t rr, I rr vs. I F
500

T j=125°C 25°C t rr
rr [nsec]
[A]

400 125°C
rr

I rr
[A]

Reverse recovery current : I

:t
F

300 125°C
Reverse recovery time
Forward current : I

t rr 25°C

I rr 25°C
200
100

100

0
0 1 2 3 4 5 0 100 200 300 400

Forward voltage : V F [V] Forward current : I F [A]

Reversed biased safe operating area

Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >4.7 Ω
2000

Diode
[°C/W]

IGBT 1600
0,1
th(j-c)

[A] C

SCSOA
Thermal resistance : R

1200
Collector current : I

(non-repetitive pulse)

0,01 800

400

RBSOA (Repetitive pulse)

0,001 0
0,001 0,01 0,1 1 0 200 400 600 800 1000 1200
Pulse width : PW [sec] Collector-Emitter voltage : V CE [V]
 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage
V CC=600V, R G =4.7 Ω , V GE =±15V T j=25°C

60
E on 125°C 100
,E off ,E rr [mJ/cycle]

, C oes , C res [nF]

E off 125°C
50

40 C ies
E on 25°C

ies
on

30
10

Capacitance : C
Switching loss : E

E off 25°C
20 E rr 125°C

10 C oes
E rr 25°C
C res
0 1
0 100 200 300 400 0 5 10 15 20 25 30 35
Collector Current : I C [A] Collector-Emitter Voltage : V CE [V]

Fuji Electric GmbH Fuji Electric (UK) Ltd.

Lyoner Straße 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60

P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com