6MBI75S-120 IGBT Modules

IGBT MODULE ( S series)

1200V / 75A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Collector-Emitter voltage VCES 1200 V Equivalent Circuit Schematic
Gate-Emitter voltage V GES ±20 V 21(P) 13(P)
Collector Continuous Tc=25°C IC 100 A
current Tc=80°C 75
1(Gu) 5(Gv) 9(Gw)
1ms Tc=25°C IC pulse 200 A
Tc=80°C 150
2(Eu) 6(Ev) 10(Ew)
-I C 75 A
19(U) 17(V) 15(W)
1ms -IC pulse 150 A
Max. power dissipation (1 device) PC 520 W 3(Gx) 7(Gy) 11(Gz)

Operating temperature Tj +150 °C

4(Ex) 8(Ey) 12(Ez)
Storage temperature Tstg -40 to +125 °C 14(N)
20(N)
Isolation voltage Vis AC 2500 (1min.) V
Screw torque Mounting *1 3.5 N·m

*1 : Recommendable value : 2.5 to 3.5 N·m (M5)

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=1200V mA
Gate-Emitter leakage current IGES – – 0.2 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 5.5 7.2 8.5 VCE=20V, IC=75mA V
Collector-Emitter saturation voltage VCE(sat) – 2.3 2.6 Tj=25°C VGE=15V, IC=75A V
– 2.8 – Tj=125°C
Input capacitance Cies – 9000 – VGE=0V pF
Output capacitance Coes – 1875 – VCE=10V
Reverse transfer capacitance Cres – 1650 – f=1MHz
Turn-on time ton – 0.35 1.2 VCC=600V µs
tr – 0.25 0.6 IC=75A
tr(i) – 0.1 – VGE=±15V
Turn-off time toff – 0.45 1.0 RG=16Ω
tf – 0.08 0.3
Diode forward on voltage VF – 2.5 3.3 Tj=25°C IF=75A, VGE=0V V
– 2.0 – Tj=125°C
Reverse recovery time trr – – 0.35 IF=75A µs

Thermal resistance characteristics

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c) – – 0.24 IGBT °C/W
Thermal resistance Rth(j-c) – – 0.50 FWD °C/W
Rth(c-f)*2 – 0.05 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI75S-120 IGBT Modules

Characteristics
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
200 200

15V
VGE= 20V 12V VGE= 20V 15V 12V
150 150
Collector current : Ic [ A ]

Collector current : Ic [ A ]
10V
100 100
10V

50 50

8V

8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
o
VGE=15V (typ.) Tj= 25 C (typ.)
200 10

o o
Tj= 25 C Tj= 125 C 8
150
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]

100

Ic= 150A
50
Ic= 75A
2
Ic= 37.5A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)

o o
VGE=0V, f= 1MHz, Tj= 25 C Vcc=600V, Ic=75A, Tj= 25 C
20000 1000 25

10000
Cies
800 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Gate - Emitter voltage : VGE [ V ]

600 15

1000
400 10
Coes

Cres

200 5

100 0 0
0 5 10 15 20 25 30 35 0 200 400 600 800
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
6MBI75S-120 IGBT Modules

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=16Ω,Tj=25oC Vcc=600V,VGE=±15V, Rg=16Ω,Tj=125oC
1000 1000

toff

500 500
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

toff
ton

tr
ton

tr

tf

100 100
tf

50 50
0 50 100 150 0 50 100 150
Collector current : Ic [ A ] Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=75A,VGE=±15V,Tj=25oC Vcc=600V,VGE=±15V, Rg=16Ω,Tj=125oC
5000 20

o
ton Eon(125 C)
toff
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

tr 15
Switching time : ton, tr, toff, tf [ nsec ]

1000
o
Eon(25 C)

500 10

o
Eoff(125 C)

o
Eoff(25 C)
5
o
Err(125 C)

100 tf
o
Err(25 C)

50 0
5 10 50 100 500 0 50 100 150
Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area
o
Vcc=600V,Ic=75A,VGE=±15V ,Tj=125oC +VGE=15V,-VGE<
=15V, Rg>16Ω,Tj<125
= = C
50 200
Eon

40
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

150
Collector current : Ic [ A ]

30

100

20

Eoff
50
10

Err
0 0
5 10 50 100 500 0 200 400 600 800 1000 1200 1400
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
6MBI75S-120 IGBT Modules

Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
Vcc=600V,VGE=±15V, Rg=16Ω ,Tj=125oC
200 300

o
trr(125 C)
o o
Tj=125 C Tj=25 C
150

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
100 o
Forward current : IF [ A ]

trr(25 C)

o
Irr(125 C)
100
o
Irr(25 C)

50

0 10
0 1 2 3 4 0 50 100 150
Forward on voltage : VF [ V ] Forward current : IF [ A ]

Transient thermal resistance

FWD
Thermal resistanse : Rth(j-c) [ C/W ]

IGBT
o

0.1

M626

0.01
0.001 0.01 0.1 1
Pulse width : Pw [ sec ]

Outline Drawings, mm
122±1
110±0.3
8-R2.25±0.3
94.5±0.3
4-ø5.5±0.3 13.09 19.05 19.05 19.05 19.05 11.5
+0.5
0

19 18 17 16 15
19.05 11.67

+0.5

3.81
14
20

0
39.9±0.3

11.5

ø2.5±0.1
3.81

57.5±0.3
50±0.3
58.42

1.5
62±1

99.6±0.3
21

13

3.81 ø2.1±0.1
Section A-A
1 2 3 4 5 6 7 8 9 11 12

4.06 15 15.24 15.24 15.24 15.24 15.24 A A 1.15±0.2

ø0.4
3.5±0.5
1.5±0.3

118.11
0.8±0.2
20.5±1

2.5±0.3
17±1

6.5±0.5

1±0.2

Shows theory dimensions

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