6MBP100RTB060

IPM-R3 series 600V / 100A 6 in one-package

Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Min. Max.
DC bus voltage VDC 0 450 V
DC bus voltage (surge) VDC(surge) 0 500 V
DC bus voltage (short operating) V SC 200 400 V
Collector-Emitter voltage VCES *1 0 600 V
INV Collector current DC IC - 100 A
1ms ICP - 200 A
Duty=72.3% -IC *2 - 100 A
Collector power dissipation One transistor PC *3 - 347 W
Junction temperature Tj - 150 °C
Input voltage of power supply for Pre-Driver VCC *4 -0.5 20 V
Input signal voltage Vin *5 -0.5 Vcc+0.5 V
Input signal current Iin - 3 mA
Alarm signal voltage VALM *6 -0.5 Vcc V
Alarm signal current IALM *7 - 20 mA
Storage temperature Tstg -40 125 °C
Fig.1 Measurement of case temperature
Operating case temperature Topr -20 100 °C
Isolating voltage (Case-Terminal) Viso *8 - AC2.5 kV
Screw torque Mounting (M5) - 3.5 *9 N·m
Terminal (M5) - 3.5 *9 N·m

*1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.665/(100 x 2.6)x100=72.3%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.36=347W [Inverter]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
6MBP100RTB060 IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
INV Collector current at off signal input ICES VCE=600V Vin terminal open. - - 1.0 mA
Collector-Emitter saturation voltage VCE(sat) Ic=100A Terminal - - 2.3 V
Chip - 1.8 -
Forward voltage of FWD VF -Ic=100A Terminal - - 2.6 V
Chip - 1.6 -
Turn-on time ton VDC=300V,Tj=125°C 1.2 - - µs
Turn-off time toff IC=100A Fig.1, Fig.6 - - 3.6
Reverse recovery time trr VDC=300V, IC=100A Fig.1, Fig.6 - - 0.3
Maximum Avalanche Energy PAV Internal wiring inductance=50nH 100 - - mJ
(A non-repetition) Main circuit wiring inductace=54nH

Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit) Iccp Switching Trequency : 0 to 15kHz - - 18 mA
Supply current of N-line side pre-driver ICCN Tc=-20 to 125°C Fig.7 - - 65 mA
Input signal threshold voltage (on/off) Vin(th) ON 1.00 1.35 1.70 V
OFF 1.25 1.60 1.95 V
Input zener voltage VZ Rin=20k ohm - 8.0 - V
Alarm signal hold time tALM Tc=-20°C Fig.2 1.1 - - ms
Tc=25°C Fig.2 - 2.0 - ms
Tc=125°C Fig.2 - - 4.0 ms
Limiting resistor for alarm RALM 1425 1500 1575 ohm

Protection Section ( Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Over Current Protection Level of Inverter circuit IOC Tj=125°C 150 - - A
Over Current Protection Delay time tDOC Tj=125°C - 5 - µs
SC Protection Delay time tSC Tj=125°C Fig.4 - - 8 µs
IGBT Chip Over Heating TjOH surface of IGBT chips 150 - - °C
Over Heating Protection Hysteresis TjH VDC=0V, Ic=0A, Case temperature - 20 - °C
Over Heating Protection Temperature Level TCOH 110 - 125 °C
Over Heating Protection Hysteresis TCH - 20 -
Under Voltage Protection Level V UV 11.0 - 12.5 V
Under Voltage Protection Hysteresis VH 0.2 0.5 -

Thermal characteristics( Tc=25°C)

Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance INV IGBT Rth(j-c) - - 0.36 °C/W
FWD Rth(j-c) - - 0.665 °C/W
Case to fin thermal resistance with compound Rth(c-f) - 0.05 - °C/W

Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)

Item Condition Min. Typ. Max. Unit
Common mode rectangular noise Pulse width 1µs, polarity ±,10minuets
±2.0 - - kV
Judge : no over-current, no miss operating
Common mode lightning surge Rise time 1.2µs, Fall time 50µs
±5.0 - - kV
Interval 20s, 10 times
Judge : no over-current, no miss operating

Recommendable value
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage V DC - - 400 V
Operating Supply Voltage of Pre-Driver V CC 13.5 15.0 16.5 V
Screw torque (M5) - 2.5 - 3.0 Nm

Weight
Item Symbol Min. Typ. Max. Unit
Weight Wt - 450 - g
*9 : (For 1 device, Case is under the device)
6MBP100RTB060 IGBT-IPM

Vin
Vin(th) on Vin(th)

trr
90%
50%

Ic 90% 10%

ton toff

Figure 1. Switching Time Waveform Definitions

off off
/Vin
on on
Gate on
Vge (Inside IPM) Gate off

normal
Fault (Inside IPM)

/ALM alarm
2ms(typ.)
tALM>Max. tALM>Max. tALM

Fault : Over-current, Over-heat or Under-voltage

Figure 2. Input / Output Timing Diagram

tsc

Ic Ic Ic

IALM IALM IALM

Figure. 4 Definition of tsc

Vcc P

20k IPM L DC
DC + 300V
CT 15V
VccU P Vin Ic
HCPL-
20k
4504
DC VinU U
15V GND N
Sw1 AC200V
GNDU Figure 6. Switching Characteristics Test Circuit
V +
Vcc

20k
DC VinX W
Icc Vcc P
15V
Sw2 4700p
N Noise
GND I PM U
DC Vin
Earth 15V V
Cooling P.G W
Fin +8V fsw GND
N
Figure 5. Noise Test Circuit

Figure 7. Icc Test Circuit

6MBP100RTB060 IGBT-IPM

Block diagram
VccU 3 P

VinU 2 Pre-Driver

GNDU 1
U
VccV 6

VinV 5 Pre-Driver

V
GNDV 4

VccW 9

VinW 8 Pre-Driver

GNDW 7 W
Vcc 11

VinX 13 Pre-Driver

GND 10

VinY 14 Pre-Driver

VinZ 15 Pre-Driver

B
NC

12 NC Pre-driver include following functions

N 1 Amplifier for drive
2 Short circuit protection
RALM Over heating protection
3 Under voltage lockout circuit
ALM 16
circuit 4 Over current protection
1.5kΩ
5 IGBT chip over heating protection

Outline drawings, mm

Mass : 450g
6MBP100RTB060 IGBT-IPM

Characteristics
Control circuit characteristics (Respresentative)

Power supply current vs. Switching frequency Input signal threshold voltage
N-side vs. Power supply voltage Tj=25°C
Tc=125°C ········· P-side ········· Tj=125°C
60 2.5
Power supply current Icc (mA)

50
2.0

Input signal threshold voltage

40

Vin (ON), Vin (OFF), (V)

1.5

30

1.0
20

0.5
10

0 0
0 5 10 15 20 25 12 13 14 15 16 17 18

Switching frequency fsw (kHz) Power supply voltage Vcc (V)

Under voltage vs. Junction temperature Under voltage hysterisis vs. Junction temperature
14 1.0

12
Undervoltage hysterisis VH (V)

0.8

10
Under voltage VUVT (V)

0.6
8

6
0.4

0.2
2

0 0
20 40 60 80 100 120 140 20 40 60 80 100 120 140

Junction temperature Tj (°C) Junction temperature Tj (°C )

Alarm hold time vs. Power supply voltage Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
3.0 200
OH hysterisis TCH,TjH (°C)
Overheating protection TCOH,TjOH (°C)

2.5
Alarm hold time tALM (msec.)

150
2.0

1.5 100

1.0

50

0.5

0 0
12 13 14 15 16 17 18 12 13 14 15 16 17 18

Power supply voltage Vcc (V) Power supply voltage Vcc (V)
6MBP100RTB060 IGBT-IPM
Main circuit characteristics (Respresentative)

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip) Tj=25°C(Terminal)
120 120

100 100
Collector current Ic (A)

80

Collector current Ic (A)

80

60 60

40 40

20 20

0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V)

Collector current vs. Collector-Emitter voltage

Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Tj=125°C(Chip)
120 120

100 100
Collector current Ic (A)
Collector current Ic (A)

80 80

60 60

40 40

20 20

0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V)

Forward current vs. Forward voltage Forward current vs. Forward voltage
(Chip) (Terminal)
150
150
Forward current IF (A)

Forward current IF (A)

100
100

50
50

0
0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5
Foeward voltage VF (V) Foeward voltage VF (V)
6MBP100RTB060 IGBT-IPM

Switching Loss vs. Collector current Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C Edc=300V, Vcc=15V, Tj=125°C
10 10

Switching loss Eon,Eoff, Err (mJ/cycle)

Switching loss Eon,Eoff, Err (mJ/cycle)

8 8

6 6

4 4

2 2

0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector current IC (A) Collector current IC (A)

Reverse biased safe operating area

Vcc=15V, Tj < Transient thermal resistance
=125°C
300
Thermal resistance Rth(j-c) (°C/W)

1
250
Collector current Ic (A)

200

150
0.1

100

50

0 0.01
0 100 200 300 400 500 600 700 0.001 0.01 0.1 1
Collector-Emitter voltage VCE (V) Pulse width Pw (sec.)

Power derating for IGBT (per device) Power derating for FWD (per device)
400 200
Collector power dissipation Pc (W)

350
Collector power dissipation Pc (W)

300 150

250

200 100

150

100 50

50

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Case temperature Tc (°C) Case temperature Tc (°C)
6MBP100RTB060 IGBT-IPM

Switching time vs. Collector current Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C Edc=300V, Vcc=15V, Tj=125°C
10000 10000
Switching time ton,toff,tf (nsec.)

Switching time ton,toff,tf (nsec.)

1000 1000

100 100

10 10
20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160
Collector current Ic (A) Collector current Ic (A)

Reverse recovery characteristics

trr, Irr, vs. IF
Reverse recovery time trr (nsec.)
Reverse recovery current Irr (A)

100

10

1
20 40 60 80 100 120 140 160
Foeward current IF (A)