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7MBP75RA120
IGBT-IPM R series 1200V / 75A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Thermal characteristics(Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance INV IGBT Rth(j-c) - 0.25 °C/W
FWD Rth(j-c) - 0.73 °C/W
DB IGBT Rth(j-c) - 0.63 °C/W
Case to fin thermal resistance with compound Rth(c-f) 0.05 - °C/W
Recommendable value
Item Symbol Min. Typ. Max. Unit
DC bus voltage VDC 200 - 800 V
Operating power supply voltage range of Pre-driver VCC 13.5 15 16.5 V
Switching frequency of IPM fSW 1 - 20 kHz
Screw torque Mounting (M5) - 2.5 - 3.0 N·m
Terminal (M5) - 2.5 - 3.0 N·m
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7MBP75RA120 IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 440g
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7MBP75RA120 IGBT-IPM
Characteristics (Representative)
Control Circuit
P-side Vcc=17V
40 2
Vcc=15V
: Vin(on),Vin(off) (V)
} Vin(off)
Vcc=13V
30 1.5 } Vin(on)
20 1
Vcc=17V
Vcc=15V
10 0.5
Vcc=13V
0 0
0 5 10 15 20 25 12 13 14 15 16 17 18
Switching frequency : fsw (kHz) Power supply voltage : Vcc (V)
Under voltage vs. Junction temperature Under voltage hysterisis vs. Jnction temperature
14 1
Under voltage hysterisis : VH (V)
12
0.8
Under voltage : VUVT (V)
10
0.6
8
6 0.4
4
0.2
2
0 0
20 40 60 80 100 120 140 20 40 60 80 100 120 140
Junction temperature : Tj (°C) Junction temperature : Tj (°C)
TjOH
OH hysterisis : TcH,TjH (°C)
2.5
Alarm hold time : tALM (mSec)
Tj=125°C 150
2
TcOH
Tj=25°C
1.5 100
1
50
0.5 TcH,TjH
0 0
12 13 14 15 16 17 18 12 13 14 15 16 17 18
Power supply voltage : Vcc (V) Power supply voltage : Vcc (V)
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7MBP75RA120 IGBT-IPM
Inverter
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
Vcc=15V 120 Vcc=15V
120
Vcc=17V
Vcc=17V
100 100
Vcc=13V
80 80
60 60
40 40
20 20
0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V)
Switching time vs. Collector current Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25°C Edc=600V,Vcc=15V,Tj=125°C
10000 10000
Switching time : ton,toff,tf (nSec)
toff
toff
1000 ton
ton
1000
tf
100
tf
10 100
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector current : Ic (A) Collector current : Ic (A)
125°C 25°C
Reverse recovery time : trr(nSec)
Reverse recovery current : Irr(A)
100
trr125°C
Forward Current : If (A)
80
trr25°C
60 100
40
Irr125°C
20
Irr25°C
0 10
0 20 40 60 80 100 120
0 0.5 1 1.5 2 2.5 3
Forward current : IF(A)
Forward voltage : Vf (V)
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7MBP75RA120 IGBT-IPM
900
600
0.1
SCSOA
450 (non-repetitive pulse)
300
150
RBSOA
(Repetitive pulse)
0.01 0
0.001 0.01 0.1 1 0 200 400 600 800 1000 1200 1400
Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V)
175
Collecter Power Dissipation : Pc (W)
500
150
400
125
300 100
75
200
50
100
25
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Case Temperature : Tc (°C) Case Temperature : Tc (°C)
Switching Loss vs. Collector Current Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25°C Edc=600V,Vcc=15V,Tj=125°C
35 35
Switching loss : Eon,Eoff,Err (mJ/cycle)
30 30 Eon
25 25
20 20
Eon
15 15 Eoff
10 Eoff 10
Err
5 5
Err
0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector current : Ic (A) Collector current : Ic (A)
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7MBP75RA120 IGBT-IPM
250
200
150
100
50
0
0 20 40 60 80 100 120 140
Junction temperature : Tj(°C)
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7MBP75RA120 IGBT-IPM
Brake
C o lle c to r cu rren t vs . C ollec to r-E m itte r vo lta ge Collector current vs. Collector-Emitter voltage
T j= 25 °C Tj=125°C
Vcc=15V Vcc=15V
40 40
Vcc=17V
35 35 Vcc=17V
Vcc=13V
30 30 Vcc=13V
25 25
20 20
15 15
10 10
5 5
0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V)
300
Collector current : Ic (A)
250
200
0.1 SCSOA
150 (non-repetitive pulse)
100
50
RBSOA
(Repetitive pulse)
0.01 0
0 200 400 600 800 1000 1200 1400
0.001 0.01 0.1 1
Collector-Emitter voltage : Vce (V)
Pulse width :Pw (sec)
Power derating for IGBT Over current protection vs. Junction temperature
(per device) Vcc=15V
250 100
Over current protection level : Ioc(A)
Collecter Power Dissipation : Pc (W)
200 80
150 60
100 40
50 20
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140