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7MBR75VB120-50 IGBT Modules

IGBT MODULE (V series)

1200V / 75A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product

Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Maximum
Items Symbols Conditions Units
ratings
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous TC =100°C 75
Inverter

Icp 1ms TC =80°C 150

Collector current A
-IC 75
-Ic pulse 1ms 150
Collector power dissipation PC 1 device 385 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Brake

IC Continuous TC =80°C 50
Collector current A
ICP 1ms TC =80°C 100
Collector power dissipation PC 1 device 280 W
Repetitive peak reverse voltage (Diode) VRRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Converter

Average output current IO 50Hz/60Hz, sine wave 75 A

Surge current (Non-Repetitive) IFSM 10ms, Tj =150°C 520 A
I2t (Non-Repetitive) I2t half sine wave 1352 A2 s
Inverter, Brake 175
Junction temperature Tj
Converter 150
Operating junciton temperature Inverter, Brake 150
Tjop
(under switching conditions) Converter 150
°C
Case temperature TC 125
Maximum junction temperature Tjmax 175
Operating temperature (under switching conditions) Tjop 150
Storage temperature Tstg -40 ~ +125
between terminal and copper base (*1)
Isolation voltage Viso AC : 1min. 2500 VAC
between thermistor and others (*2)
Screw torque Mounting (*3) - M5 3.5 Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)

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Electrical characteristics (at Tj = 25°C unless otherwise specified)

Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 75mA 6.0 6.5 7.0 V
Tj =25°C - 2.35 2.80
VCE (sat) VGE = 15V
Tj =125°C - 2.70 -
(terminal) IC = 75A
Tj =150°C - 2.75 -
Collector-Emitter saturation voltage V
Tj =25°C - 1.85 2.30
VCE (sat) VGE = 15V
Tj =125°C - 2.20 -
(chip) IC = 75A
Tj =150°C - 2.25 -
Internal gate resistance Rg(int) - - 10 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 6.0 - nF
Inverter

ton - 0.39 1.20

Turn-on time tr VCC = 600V - 0.09 0.60
IC = 75A
tr (i) - 0.03 - µs
VGE = +15 / -15V
toff RG = 2.2Ω - 0.53 1.00
Turn-off time
tf - 0.06 0.30
Tj =25°C - 2.20 2.65
VF
IF = 75A Tj =125°C - 2.35 -
(terminal)
Tj =150°C - 2.30 -
Forward on voltage V
Tj =25°C - 1.70 2.15
VF
IF = 75A Tj =125°C - 1.85 -
(chip)
Tj =150°C - 1.80 -
Reverse recovery time trr IF = 75A - - 0.35 µs
VGE = 0V
Zero gate voltage collector current ICES - - 1.0 mA
VCE = 1200V
VCE = 0V
Gate-Emitter leakage current IGES - - 200 nA
VGE = +20 / -20V
Tj =25°C - 2.20 2.65
VCE (sat) VGE = 15V
Tj =125°C - 2.55 -
(terminal) IC = 50A
Tj =150°C - 2.60 -
Collector-Emitter saturation voltage V
Brake

Tj =25°C - 1.85 2.30

VCE (sat) VGE = 15V
Tj =125°C - 2.20 -
(chip) IC = 50A
Tj =150°C - 2.25 -
Internal gate resistance Rg(int) - - 4 - Ω
ton - 0.39 1.20
Turn-on time VCE = 600V
tr IC = 50A - 0.09 0.60
µs
toff VGE = +15 / -15V - 0.53 1.00
Turn-off time RG = 15Ω
tf - 0.06 0.30
Reverse current IRRM VR = 1200V - - 1.00 mA
VFM terminal - 1.90 2.35
Thermistor Converter

Forward on voltage IF = 75A V

(chip) chip - 1.40 -
Reverse current IRRM VR = 1600V - - 1.0 mA
T = 25°C - 5000 -
Resistance R Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K

Thermal resistance characteristics

Characteristics
Items Symbols Conditions Units
min. typ. max.
Inverter IGBT - - 0.39
Inverter FWD - - 0.55
Thermal resistance (1device) Rth(j-c)
Brake IGBT - - 0.54 °C/W
Converter Diode - - 0.43
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

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Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
150 150
VGE =20V 15V VGE=20V 15V
12V
125 125 12V
Collector current: IC [A]

Collector current: IC [A]

100 100

75 75
10V 10V

50 50

25 25
8V 8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25°C / chip
150 8
Tj=25°C
Collector - Emitter voltage: VCE [V]

Tj=150°C
125
Collector current: IC [A]

6
100 Tj=125°C

75 4

50
2 IC=150A
IC=75A
25
IC=38A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V]

[ Inverter ] [ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V， Ic=75A，Tj= 25°C
100.0
Collector - Emitter voltage: VCE [200V/div]
VGE [5V/div]
Capacitance: Cies, Coes, Cres [nF]

Cies VCE VGE

10.0
Gate - Emitter voltage:

1.0 0
Cres

Coes
0.1

0.0
0 10 20 30 -700 0 700
Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC]

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[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.2Ω, Tj= 125°C VCC=600V, VGE=±15V, RG=2.2Ω, Tj= 150°C
10000 10000
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000 1000
toff toff

ton ton

tr tr
100 100

tf tf

10 10
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Collector current: IC [A] Collector current: IC [A]

[ Inverter ] [ Inverter ]
Switching time vs. gate resistance (typ.) Switching loss vs. Collector current (typ.)
VCC=600V, IC=75A, VGE=±15V, Tj= 125°C VCC=600V, VGE=±15V, RG=2.2Ω
10000 20
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]

Eon(150°C)
Eon(125°C)
15 Eoff(150°C)
1000 toff Eoff(125°C)

ton 10
tr
100 Err(150°C)
tf 5 Err(125°C)

10 0
0.1 1.0 10.0 100.0 0 25 50 75 100 125 150 175 200

Gate resistance : RG [Ω] Collector current: IC [A]

[ Inverter ] [ Inverter ]
Switching Loss vs. gate resistance (typ.) Reverse bias safe operating area (max.)
VCC=600V, IC=75A, VGE=±15V +VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj =150°C
14 200
Switching loss : Eon, Eoff, Err [mJ/pulse ]

12 175
Eon(150°C)
Collector current: IC [A]

Eon(125°C) 150
10
125
8 Eoff(150°C)
Eoff(125°C) 100
RBSOA
6
75 (Repetitive pulse)
Err(150°C)
4
Err(125°C) 50

2 25

0 0
1 10 100 0 400 800 1200

Gate resistance : RG [Ω] Collector-Emitter voltage : VCE [V]

(Main terminals)
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[ Inverter ] [ Inverter ]
Forward current vs. forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip VCC=600V, VGE=±15V, RG=2.2Ω
150 1000
Tj=25°C

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
125
Forward current : IF [A]

100
trr(150°C)
trr(125°C)
75 Tj=150°C 100 Irr(150°C)
Irr(125°C)
Tj=125°C
50

25

0 10
0 1 2 3 4 5 0 50 100 150 200

Forward on voltage : VF [V] Forward current : IF [A]

[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
150
Tj=25°C Tj=125°

125
Forward current : IF [A]

100

75

50

25

0
0 1 2 3 4

Forward on voltage : VFM [V]

[ Thermistor ]
Transient thermal resistance (max.) Temperature characteristic (typ.)

10.00 100
Thermal resistanse : Rth(j-c) [ °C/W ]

n 1 2 3 4
τn [sec] 0.0023 0.0301 0.0598 0.0708
rn IGBT 0.04183 0.10606 0.14983 0.09228
[°C/W] FWD 0.05899 0.14957 0.21130 0.13014
B-IGBT 0.05792 0.14685 0.20746 0.12777
Resistance : R [kΩ]

Conv 0.04612 0.11694 0.16520 0.10174

1.00 FWD[Inverter] 10
IGBT[Brake]

Conv. Diode
IGBT[Inverter]

0.10 1

0.01 0.1
0.001 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Pulse width : Pw [sec] Temperature [°C ]

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[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
100 100
VGE=20V VGE=20V
15V 15V
12V
Collector current: IC [A]

Collector current: IC [A]

75 75
12V

50 50
10V 10V

25 25
8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj= 25°C / chip
100 8
Tj=25°C
Collector - Emitter voltage: VCE [V]

Tj=150°C
Collector current: IC [A]

75 6
Tj=125°C

50 4

Ic=100A
25 2
Ic=50A
Ic=25A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V， Ic=50A，Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]

10.0
VGE [5V/div]

VCE VGE
Capacitance: Cies, Coes, Cres [nF]

Cies
Gate - Emitter voltage:

1.0 0

Cres

Coes

0.1
0 10 20 30 -600 0 600

Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC]

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Outline Drawings (Unit: mm)

Weight: 300g (typ.)

Equivalent Circuit
[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]
21(P) 22(P1)

8 9
20 18 16
(Gu) (Gv) (Gw)

1(R) 2(S) 3(T)

19(Eu) 17(Ev) 15(Ew)
7(B) 4(U) 5(V) 6(W)

14(Gb) 13(Gx) 12(Gy) 11(Gz)

23(N) 24(N1) 10(En)

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WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.

2. A
 ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.

3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.

4. T
 he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
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• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

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such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
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• Medical equipment

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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.

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