1200V

APT15GT120BR
® APT15GT120BRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Thunderbolt IGBT® TO
-2
47

The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed. G
C
E
• Low Forward Voltage Drop • High Freq. Switching to 50KHz

• Low Tail Current • Ultra Low Leakage Current C

• RBSOA and SCSOA Rated
G

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT15GT120BR(G) UNIT

VCES Collector-Emitter Voltage 1200

Volts
VGE Gate-Emitter Voltage ±30
I C1 Continuous Collector Current @ TC = 25°C 36
I C2 Continuous Collector Current @ TC = 110°C 18 Amps
1
I CM Pulsed Collector Current @ TC = 150°C 45
SSOA Switching Safe Operating Area @ TJ = 150°C 45A @ 960V
PD Total Power Dissipation 250 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX Units

V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) 1200

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25°C) 4.5 5.5 6.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) 2.5 3.0 3.6
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) 3.8
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 100
I CES µA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)) TBD
12-2005

I GES Gate-Emitter Leakage Current (VGE = ±20V) 480 nA

Rev B

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

052-6266
 DYNAMIC CHARACTERISTICS APT15GT120BR(G)
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Cies Input Capacitance Capacitance 1070
Coes Output Capacitance VGE = 0V, VCE = 25V 100 pF
Cres Reverse Transfer Capacitance f = 1 MHz 65
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 10 V
Qg 3 VGE = 15V
Total Gate Charge 105
Qge Gate-Emitter Charge VCE = 600V 10 nC
Qgc I C = 15A
Gate-Collector ("Miller ") Charge 60
TJ = 150°C, R G = 5Ω, VGE =
SSOA Switching Safe Operating Area 45 A
15V, L = 100µH,VCE = 960V
td(on) Turn-on Delay Time Inductive Switching (25°C) 10
tr Current Rise Time VCC = 800V 11 ns
td(off) Turn-off Delay Time VGE = 15V
85
tf I C = 15A
Current Fall Time 35
RG = 5Ω
Eon1 Turn-on Switching Energy 4
585
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 5
800 µJ
Eoff 6
Turn-off Switching Energy 260
td(on) Turn-on Delay Time Inductive Switching (125°C) 10
tr Current Rise Time VCC = 800V 11
ns
td(off) Turn-off Delay Time VGE = 15V
95
tf I C = 15A
Current Fall Time 42
RG = 5Ω
Eon1 Turn-on Switching Energy 44
590
TJ = +125°C
Eon2 Turn-on Switching Energy (Diode) 55
1440 µJ
Eoff 6
Turn-off Switching Energy 340

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case (IGBT) .50
°C/W
RθJC Junction to Case (DIODE) N/A
WT Package Weight 5.9 gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
12-2005

6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.
Rev B
052-6266
TYPICAL PERFORMANCE CURVES APT15GT120BR(G)
45 60
V
GE
= 15V 15V
14V
40
50
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

35
TJ = -55°C 13V
30 40

25 12V
TJ = 25°C 30
20 11V
15 20
TJ = 125°C 10V
10
10 9V
5
8V
0 0
0 1 2 3 4 5 6 7 0 5 10 15 20 25 30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
45 250µs PULSE
16
I = 15A
TEST<0.5 % DUTY C
T = 25°C

VGE, GATE-TO-EMITTER VOLTAGE (V)

40 CYCLE
14
J
IC, COLLECTOR CURRENT (A)

VCE = 240V
35 12
VCE = 600V
30
10
VCE = 960V
25
8
20
TJ = -55°C 6
15
TJ = 25°C
4
10
TJ = 125°C
5 2

0 0
0 2 4 6 8 10 12 14 0 20 40 60 80 100 120
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
6 6
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5 5
IC = 30A IC = 30A

4 4
IC = 15A IC = 15A

3 3 IC = 7.5A

IC = 7.5A
2 2

1 1 VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0 0
9 10 11 12 13 14 15 16 -50 -25 0 25 50 75 100 125
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.10 45

40
1.05
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE

35
1.00
30
(NORMALIZED)

0.95 25

0.90 20
12-2005

15
0.85
10
0.80
5
Rev B

0.75 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
052-6266

FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT15GT120BR(G)
14 120

td (OFF), TURN-OFF DELAY TIME (ns)

td(ON), TURN-ON DELAY TIME (ns)
12 VGE = 15V 100

10
80
VGE =15V,TJ=125°C
8 VGE =15V,TJ=25°C
60
6

40
4
VCE = 600V
2 TJ = 25°C, TJ =125°C 20 VCE = 800V
RG = 5Ω RG = 5Ω
L = 100 µH L = 100 µH
0 0
5 10 15 20 25 30 35 5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
40 45
RG = 5Ω, L = 100µH, VCE = 800V RG = 5Ω, L = 100µH, VCE = 800V

35 40

35
30
30

tf, FALL TIME (ns)

tr, RISE TIME (ns)

TJ = 125°C, VGE = 15V

25
25 TJ = 25°C, VGE = 15V
20
20
15
15
10
TJ = 25 or 125°C,VGE = 15V 10

5 5

0 0
5 10 15 20 25 30 35 5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
4000 1000
V = 800V V = 800V
CE CE
V = +15V V = +15V
EOFF, TURN OFF ENERGY LOSS (µJ)

GE GE
EON2, TURN ON ENERGY LOSS (µJ)

3500 R = 5Ω
G
R = 5Ω
G
800
3000 TJ = 125°C
TJ = 125°C

2500
600

2000

1500 400

1000
200
TJ = 25°C
500
TJ = 25°C
0 0
5 10 15 20 25 30 35 5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
8000 4000
V = 800V V = 800V
CE
SWITCHING ENERGY LOSSES (µJ)

Eon2,30A CE
V = +15V V = +15V
GE GE
SWITCHING ENERGY LOSSES (µJ)

7000 T = 125°C
J 3500 R = 5Ω
G
Eon2,30A
6000 3000

5000 2500

4000 2000

3000 1500
12-2005

Eon2,15A
Eoff,30A Eoff,30A
2000 Eon2,15A 1000

1000 Eoff,15A 500 Eon2,7.5A

Rev B

Eoff,15A
Eon2,7.5A
Eoff,7.5A Eoff,7.5A
0 0
0 10 20 30 40 50 25 50 0 75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
052-6266

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES APT15GT120BR(G)
2,000 50

IC, COLLECTOR CURRENT (A)

Cies
1,000 45

40
500
C, CAPACITANCE ( F)
35
P

30

Coes 25
100
20
50 15
Cres
10

5
10 0
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0.60

0.50
ZθJC, THERMAL IMPEDANCE (°C/W)

D = 0.9

0.40
0.7

0.30
0.5 Note:

PDM
0.20 t1
0.3
t2

0.10 t
0.1 SINGLE PULSE Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

400
FMAX, OPERATING FREQUENCY (kHz)

100

50
RC MODEL
F = min (fmax, fmax2)
max
Junction
temp. (°C) 0.05
fmax1 =
0.271 0.00471 10 td(on) + tr + td(off) + tf

Power Pdiss - Pcond

5 T = 125°C fmax2 =
(watts) J Eon2 + Eoff
T = 75°C
C
of
0.229 0.0898 D = 50 % TJ - TC
V
CE
= 800V Pdiss =
R = 5Ω
G
RθJC
Case temperature. (°C) 1
5 0 10 15 20 25 30
IC, COLLECTOR CURRENT (A)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Figure 20, Operating Frequency vs Collector Current
12-2005
Rev B
052-6266
 APT15GT120BR(G)

Gate Voltage
APT15DQ120 10%
TJ = 125°C
td(on)

tr
V CC IC V CE
Collector Current

90% 5%
5% 10%

Collector Voltage
A
Switching Energy
D.U.T.

Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions

90%

TJ = 125°C
Gate Voltage
td(off)

tf
Collector Voltage

90%
10% 0

Collector Current

Switching Energy

Figure 23, Turn-off Switching Waveforms and Definitions

TO-247 Package Outline

e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)

20.80 (.819)
Collector

21.46 (.845)
3.50 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
12-2005

20.32 (.800)
1.01 (.040) Gate
1.40 (.055)
Collector
Emitter
Rev B

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
052-6266

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.