SKiiP 39NAB12T7V1

Absolute Maximum Ratings

Symbol Conditions Values Unit
Inverter - IGBT
VCES Tj = 25 °C 1200 V
IC λpaste=0.8 W/(mK) Ts = 70 °C 135 A
Tj = 175 °C Ts = 100 °C 108 A
IC λpaste=2.5 W/(mK) Ts = 70 °C 169 A
Tj = 175 °C Ts = 100 °C 137 A
ICnom 150 A
MiniSKiiP® 3 ICRM 300 A
VGES -20 ... 20 V
VCC = 800 V
Converter-Inverter-Brake tpsc VGE ≤ 15 V Tj = 175 °C 7 µs
(CIB) VCES ≤ 1200 V
Tj -40 ... 175 °C
Chopper - IGBT
SKiiP 39NAB12T7V1 VCES Tj = 25 °C 1200 V
IC λpaste=0.8 W/(mK) Ts = 70 °C 120 A
Tj = 175 °C Ts = 100 °C 98 A
Features* IC λpaste=2.5 W/(mK) Ts = 70 °C 143 A
• 1200V Generation 7 IGBTs (T7) Tj = 175 °C Ts = 100 °C 116 A
• Robust and soft switching freewheeling
diodes in CAL technology ICnom 100 A
• New SKR PEP diode technology for ICRM 200 A
enhanced power and environmental VGES -20 ... 20 V
robustness VCC = 800 V
• Highly reliable spring contacts for tpsc VGE ≤ 15 V Tj = 175 °C 7 µs
electrical connections VCES ≤ 1200 V
• UL recognized: File no. E63532 Tj -40 ... 175 °C
Inverse - Diode
VRRM Tj = 25 °C 1200 V
Remarks
IF λpaste=0.8 W/(mK) Ts = 70 °C 88 A
• Max. case temperature limited to Tj = 175 °C Ts = 100 °C 69 A
TC=TS=125 °C
• Product reliability results valid for IF λpaste=2.5 W/(mK) Ts = 70 °C 106 A
Tj≤150 °C; Tj,op >150°C during Tj = 175 °C Ts = 100 °C 85 A
overload (Details see AN19-002) IFRM 300 A
• MiniSKiiP ″Technical Explanations″
IFSM tp = 10 ms, sin 180°, Tj = 150 °C 760 A
and ″Mounting Instructions″ are part of
the data sheet. Please refer to both Tj -40 ... 175 °C
documents for further information. Freewheeling - Diode
• For storage and case temperature with VRRM Tj = 25 °C 1200 V
TIM see document ″Technical
Explanations Thermal Interface
IF λpaste=0.8 W/(mK) Ts = 70 °C 80 A
Materials″ Tj = 175 °C Ts = 100 °C 64 A
• Inverter IGBT: T1 – T6 IF λpaste=2.5 W/(mK) Ts = 70 °C 94 A
• Chopper IGBT: T14 Tj = 175 °C Ts = 100 °C 75 A
• Inverse Diode: D1 – D6
IFRM 200 A
• Freewheeling Diode: D13
• Rectifier Diode: D7 – D12 IFSM tp = 10 ms, sin 180°, Tj = 150 °C 550 A
• All graphs are referring to inverter/ Tj -40 ... 175 °C
rectifier part

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© by SEMIKRON Rev. 2.0 – 31.01.2022 1

SKiiP 39NAB12T7V1
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
VRRM Tj = 25 °C 1600 V
IF λpaste=0.8 W/(mK) Ts = 70 °C 144 A
Tj = 175 °C Ts = 100 °C 112 A
IF λpaste=2.5 W/(mK) Ts = 70 °C 159 A
Tj = 175 °C Ts = 100 °C 125 A
IFSM tp = 10 ms Tj = 25 °C 1000 A
MiniSKiiP® 3 sin 180° Tj = 150 °C 890 A
i2t tp = 10 ms Tj = 25 °C 5000 A2s
sin 180° Tj = 150 °C 3960 A2s
Converter-Inverter-Brake Tj -40 ... 175 °C
(CIB) Module
It(RMS) Tterminal = 80 °C, 20 A per spring 80 A
Tstg module without TIM -40 ... 125 °C
SKiiP 39NAB12T7V1
Visol AC sinus 50 Hz, 1 min 2500 V

Features* Characteristics
• 1200V Generation 7 IGBTs (T7) Symbol Conditions min. typ. max. Unit
• Robust and soft switching freewheeling Inverter - IGBT
diodes in CAL technology
• New SKR PEP diode technology for VCE(sat) IC = 150 A Tj = 25 °C 1.55 1.70 V
enhanced power and environmental VGE = 15 V Tj = 150 °C 1.73 1.88 V
robustness chiplevel Tj = 175 °C 1.77 1.92 V
• Highly reliable spring contacts for VCE0 Tj = 25 °C 1.00 1.05 V
electrical connections
chiplevel Tj = 150 °C 0.80 0.85 V
• UL recognized: File no. E63532
Tj = 175 °C 0.75 0.80 V
rCE Tj = 25 °C 3.7 4.3 mΩ
VGE = 15 V
Remarks Tj = 150 °C 6.2 6.9 mΩ
chiplevel
• Max. case temperature limited to Tj = 175 °C 6.8 7.5 mΩ
TC=TS=125 °C VGE(th) VGE = VCE, IC = 3.5 mA 5.15 5.8 6.45 V
• Product reliability results valid for ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 1.5 mA
Tj≤150 °C; Tj,op >150°C during Cies f = 1 MHz 30.00 nF
overload (Details see AN19-002) VCE = 25 V
Coes f = 1 MHz 0.39 nF
• MiniSKiiP ″Technical Explanations″ VGE = 0 V
and ″Mounting Instructions″ are part of Cres f = 1 MHz 0.10 nF
the data sheet. Please refer to both QG VGE = - 8V ... + 15 V 2100 nC
documents for further information. RGint Tj = 25 °C 1.0 Ω
• For storage and case temperature with
td(on) VCC = 600 V Tj = 25 °C 170 ns
TIM see document ″Technical
IC = 150 A Tj = 150 °C 181 ns
Explanations Thermal Interface
RG on = 1.1 Ω
Materials″ Tj = 175 °C 183 ns
RG off = 1.1 Ω
• Inverter IGBT: T1 – T6 tr Tj = 25 °C 34 ns
VGE = +15/-15 V
• Chopper IGBT: T14
Tj = 150 °C 39 ns
• Inverse Diode: D1 – D6
• Freewheeling Diode: D13 Tj = 175 °C 40 ns
@ Tj = 150 °C:
• Rectifier Diode: D7 – D12 Eon T = 25 °C 4.6 mJ
di/dton = 3970 A/µs j
• All graphs are referring to inverter/ T
di/dtoff = 1530 A/µs j = 150 °C 9.9 mJ
rectifier part
dv/dt = 3730 V/µs Tj = 175 °C 12 mJ

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2 Rev. 2.0 – 31.01.2022 © by SEMIKRON

SKiiP 39NAB12T7V1
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
td(off) VCC = 600 V Tj = 25 °C 274 ns
IC = 150 A Tj = 150 °C 370 ns
RG on = 1.1 Ω
Tj = 175 °C 389 ns
RG off = 1.1 Ω
tf VGE = +15/-15 V Tj = 25 °C 65 ns
Tj = 150 °C 100 ns
Tj = 175 °C 106 ns
MiniSKiiP® 3 Eoff
@ Tj = 150 °C:
T = 25 °C
di/dton = 3970 A/µs j
11 mJ
di/dtoff = 1530 A/µs j = 150 °C
T 18.7 mJ
dv/dt = 3730 V/µs Tj = 175 °C 21 mJ
Converter-Inverter-Brake Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.43 K/W
(CIB) Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.3 K/W
Chopper - IGBT
VCE(sat) IC = 100 A Tj = 25 °C 1.50 1.70 V
SKiiP 39NAB12T7V1
VGE = 15 V Tj = 150 °C 1.68 1.88 V
chiplevel Tj = 175 °C 1.77 1.92 V
Features* VCE0 Tj = 25 °C 1.00 1.05 V
• 1200V Generation 7 IGBTs (T7) chiplevel Tj = 150 °C 0.80 0.85 V
• Robust and soft switching freewheeling Tj = 175 °C 0.75 0.80 V
diodes in CAL technology rCE Tj = 25 °C 5.0 6.5 mΩ
• New SKR PEP diode technology for VGE = 15 V
Tj = 150 °C 8.8 10 mΩ
enhanced power and environmental chiplevel
robustness Tj = 175 °C 10 11 mΩ
• Highly reliable spring contacts for VGE(th) VGE = VCE, IC = 2.5 mA 5.15 5.8 6.45 V
electrical connections ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 1 mA
• UL recognized: File no. E63532
Cies f = 1 MHz 21.70 nF
VCE = 25 V
Coes f = 1 MHz 0.28 nF
VGE = 0 V
Cres f = 1 MHz 0.08 nF
Remarks
QG VGE = - 8V ... + 15 V 1400 nC
• Max. case temperature limited to
RGint Tj = 25 °C 1.5 Ω
TC=TS=125 °C
• Product reliability results valid for td(on) Tj = 25 °C 162 ns
Tj≤150 °C; Tj,op >150°C during Tj = 150 °C 171 ns
overload (Details see AN19-002) Tj = 175 °C 173 ns
• MiniSKiiP ″Technical Explanations″
tr Tj = 25 °C 31 ns
and ″Mounting Instructions″ are part of
the data sheet. Please refer to both Tj = 150 °C 38 ns
VCC = 600 V
documents for further information. IC = 100 A Tj = 175 °C 38 ns
• For storage and case temperature with Eon RG on = 1.7 Ω Tj = 25 °C 5 mJ
TIM see document ″Technical RG off = 1.7 Ω Tj = 150 °C 9.3 mJ
Explanations Thermal Interface VGE = +15/-15 V
Materials″ Tj = 175 °C 11 mJ
• Inverter IGBT: T1 – T6 td(off) Tj = 25 °C 256 ns
• Chopper IGBT: T14 @ Tj = 150 °C: Tj = 150 °C 350 ns
• Inverse Diode: D1 – D6 di/dton = 2620 A/µs Tj = 175 °C 368 ns
• Freewheeling Diode: D13 di/dtoff = 1030 A/µs T = 25 °C
• Rectifier Diode: D7 – D12 tf j 57 ns
dv/dt = 3680 V/µs
• All graphs are referring to inverter/ Tj = 150 °C 89 ns
rectifier part Tj = 175 °C 100 ns
Eoff Tj = 25 °C 6.6 mJ
Tj = 150 °C 12 mJ
Tj = 175 °C 13 mJ
Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.41 K/W
Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.31 K/W

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© by SEMIKRON Rev. 2.0 – 31.01.2022 3

SKiiP 39NAB12T7V1
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
VF = VEC IF = 150 A Tj = 25 °C 2.28 2.63 V
VGE = 0 V Tj = 150 °C 2.28 2.61 V
chiplevel Tj = 175 °C 2.12 2.46 V
VF0 Tj = 25 °C 1.30 1.50 V
chiplevel Tj = 150 °C 0.90 1.10 V
Tj = 175 °C 0.82 0.98 V
MiniSKiiP® 3 rF Tj = 25 °C 6.6 7.5 mΩ
chiplevel Tj = 150 °C 9.2 10 mΩ
Tj = 175 °C 8.6 9.8 mΩ
Converter-Inverter-Brake IRRM Tj = 25 °C 193 A
(CIB) Tj = 150 °C 241 A
VCC = 600 V Tj = 175 °C 255 A
Qrr IF = 150 A Tj = 25 °C 9 µC
SKiiP 39NAB12T7V1 VGE = -15 V
Tj = 150 °C 23 µC
@ Tj = 150 °C: Tj = 175 °C 28 µC
Features* Err di/dtoff = 3910 A/µs Tj = 25 °C 4.8 mJ
• 1200V Generation 7 IGBTs (T7) Tj = 150 °C 12 mJ
• Robust and soft switching freewheeling Tj = 175 °C 14 mJ
diodes in CAL technology Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.65 K/W
• New SKR PEP diode technology for
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.49 K/W
enhanced power and environmental
robustness Freewheeling - Diode
• Highly reliable spring contacts for VF = VEC IF = 100 A Tj = 25 °C 2.20 2.52 V
electrical connections VGE = 0 V Tj = 150 °C 2.15 2.47 V
• UL recognized: File no. E63532 chiplevel Tj = 175 °C 2.00 2.31 V
VF0 Tj = 25 °C 1.30 1.50 V
chiplevel Tj = 150 °C 0.90 1.10 V
Remarks
Tj = 175 °C 0.82 0.98 V
• Max. case temperature limited to
rF Tj = 25 °C 9.0 10 mΩ
TC=TS=125 °C
• Product reliability results valid for chiplevel Tj = 150 °C 13 14 mΩ
Tj≤150 °C; Tj,op >150°C during Tj = 175 °C 12 13 mΩ
overload (Details see AN19-002) IRRM Tj = 25 °C 93 A
• MiniSKiiP ″Technical Explanations″
Tj = 150 °C 116 A
and ″Mounting Instructions″ are part of
the data sheet. Please refer to both VCC = 600 V Tj = 175 °C 120 A
documents for further information. Qrr IF = 100 A Tj = 25 °C 5.9 µC
• For storage and case temperature with VGE = -15 V
Tj = 150 °C 15 µC
TIM see document ″Technical
@ Tj = 150 °C: Tj = 175 °C 19 µC
Explanations Thermal Interface
Materials″ Err di/dtoff = 2590 A/µs Tj = 25 °C 2.2 mJ
• Inverter IGBT: T1 – T6 Tj = 150 °C 5.9 mJ
• Chopper IGBT: T14 Tj = 175 °C 7.3 mJ
• Inverse Diode: D1 – D6
Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.65 K/W
• Freewheeling Diode: D13
• Rectifier Diode: D7 – D12 Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.51 K/W
• All graphs are referring to inverter/
rectifier part

NAB

4 Rev. 2.0 – 31.01.2022 © by SEMIKRON

SKiiP 39NAB12T7V1
Characteristics
Symbol Conditions min. typ. max. Unit
Rectifier - Diode
VF Tj = 25 °C 0.97 1.20 V
IF = 44 A
Tj = 150 °C 0.84 1.07 V
chiplevel
Tj = 175 °C 0.82 1.05 V
VF0 Tj = 25 °C 0.89 1.09 V
chiplevel Tj = 150 °C 0.73 0.92 V
Tj = 175 °C 0.69 0.88 V
MiniSKiiP® 3 rF Tj = 25 °C 1.84 2.5 mΩ
chiplevel Tj = 150 °C 2.6 3.5 mΩ
Tj = 175 °C 2.9 3.9 mΩ
Converter-Inverter-Brake IR Tj = 150 °C, VRRM 1.7 mA
(CIB) Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.51 K/W
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.44 K/W
Module
SKiiP 39NAB12T7V1
Ms to heat sink 2 2.5 Nm
w 82 g
Features* LCE - nH
• 1200V Generation 7 IGBTs (T7) Temperature Sensor
• Robust and soft switching freewheeling 1670 ±
diodes in CAL technology R100 Tr=100°C (R25=1000Ω) Ω
3%
• New SKR PEP diode technology for
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2]
enhanced power and environmental
R(T) , A = 7.635*10-3°C-1,
robustness
B = 1.731*10-5°C-2
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532

Remarks
• Max. case temperature limited to
TC=TS=125 °C
• Product reliability results valid for
Tj≤150 °C; Tj,op >150°C during
overload (Details see AN19-002)
• MiniSKiiP ″Technical Explanations″
and ″Mounting Instructions″ are part of
the data sheet. Please refer to both
documents for further information.
• For storage and case temperature with
TIM see document ″Technical
Explanations Thermal Interface
Materials″
• Inverter IGBT: T1 – T6
• Chopper IGBT: T14
• Inverse Diode: D1 – D6
• Freewheeling Diode: D13
• Rectifier Diode: D7 – D12
• All graphs are referring to inverter/
rectifier part

NAB

© by SEMIKRON Rev. 2.0 – 31.01.2022 5

SKiiP 39NAB12T7V1

Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature Ic = f(Ts)

Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)

Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

6 Rev. 2.0 – 31.01.2022 © by SEMIKRON

SKiiP 39NAB12T7V1

Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward characteristic

Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic

© by SEMIKRON Rev. 2.0 – 31.01.2022 7

SKiiP 39NAB12T7V1

Pinout

8 Rev. 2.0 – 31.01.2022 © by SEMIKRON

SKiiP 39NAB12T7V1

Pinout

This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340.

*IMPORTANT INFORMATION AND WARNINGS

The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.

© by SEMIKRON Rev. 2.0 – 31.01.2022 9