VCES IC25 VCE(sat)

Low VCE(sat) IXGH 25 N120 1200 V 50 A 3V

High speed IGBT IXGH 25 N120A 1200 V 50 A 4V

Symbol Test Conditions Maximum Ratings TO-247 AD

VCES TJ = 25°C to 150°C 1200 V

VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V
VGES Continuous ±20 V
G
VGEM Transient ±30 V C
E
I C25 TC = 25°C 50 A
G = Gate, C = Collector,
I C90 TC = 90°C 25 A
E = Emitter, TAB = Collector
I CM TC = 25°C, 1 ms 100 A
SSOA VGE = 15 V, T VJ = 125°C, RG = 33 Ω ICM = 50 A
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 VCES
PC TC = 25°C 200 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features
l
International standard package
Weight 6 g JEDEC TO-247 AD
Maximum lead temperature for soldering 300 °C
l
2nd generation HDMOSTM process
1.6 mm (0.062 in.) from case for 10 s
l
Low VCE(sat)
- for low on-state conduction losses
l
MOS Gate turn-on
- drive simplicity

Symbol Test Conditions Characteristic Values Applications

(TJ = 25°C, unless otherwise specified) l
AC motor speed control
min. typ. max. l
DC servo and robot drives
l
DC choppers
BVCES IC = 3 mA, VGE = 0 V 1200 V l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
VGE(th) IC = 250 µA, VCE = VGE 2.5 6 V
power supplies
l
Capacitor discharge systems
ICES VCE = 0.8 • VCES TJ = 25°C 250 µA
VGE = 0 V
l
Solid state relays
TJ = 125°C 1 mA

I GES VCE = 0 V, VGE = ±20 V ±100 nA Advantages

l
Easy to mount with 1 screw (TO-247)
VCE(sat) IC = IC90, VGE = 15 V 25N120 3 V (isolated mounting screw hole)
25N120A 4 V l
High power density

© 1996 IXYS All rights reserved 92783D (3/96)

This datasheet has been downloaded from http://www.digchip.com at this page

 IXGH 25N120
IXGH 25N120A

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) TO-247 AD Outline
min. typ. max.

gfs I C = I C90; VCE = 10 V, 8 15 S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

Cies 2750 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF
Cres 50 pF

Qg 130 180 nC
Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 25 50 nC
Qgc 55 90 nC

td(on) Inductive load, TJ = 25°°C 100 ns 1 = Gate

tri IC = IC90, VGE = 15 V, L = 100 µH, 250 ns 2 = Collector
VCE = 0.8 VCES , RG = Roff = 33 Ω 3 = Emitter
td(off) 650 1000 ns Tab = Collector
Remarks: Switching times
tfi 25N120 700 ns
may increase
25N120A 600 800 ns
for VCE (Clamp) > 0.8 • VCES,
Eoff higher TJ or increased RG 25N120A 11 mJ

td(on) 100 ns
Inductive load, TJ = 125°°C
tri 250 ns
IC = IC90, VGE = 15 V, L = 100 µH
Eon 4.2 mJ
VCE = 0.8 V CES, RG = Roff = 33 Ω
td(off) 720 1000 ns
Remarks: Switching times
tfi may increase 25N120 1200 ns
25N120A 800 1200 ns
for VCE (Clamp) > 0.8 • VCES ,
Eoff higher TJ or increased RG 25N120A 15 mJ

RthJC 0.62 K/W

RthCK 0.25 K/W

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025