2MBI300N-060 IGBT Module

600V / 300A 2 in one-package

Features
· High speed switching
· Voltage drive
· Low inductance module structure

Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Equivalent Circuit Schematic
Item Symbol Rating Unit
C2E1
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltaga VGES ±20 V C1 E2
Collector Continuous IC 300 A
current 1ms IC pulse 600 A
Continuous -IC 300 A
¤ ¤
1ms -IC pulse 600 A

種
Max. power dissipation PC 1100 W
Operating temperature Tj +150 °C

機
G1 E1 G2 E2

.
Storage temperature Tstg -40 to +125 °C

t
¤ Current control circuit

c
Isolation voltage Vis AC 2500 (1min.) V

d u
型
Screw torque Mounting *1 N·m

o
3.5
Terminals *1 3.5 N·m
p r
d
廃
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)

u e
n
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol
n t
Characteristics i Conditions Unit

c o
Dis
Min. Typ. Max.
Zero gate voltage collector current ICES – – 2.0 VGE=0V, VCE=600V mA
Gate-Emitter leakage current IGES – – 30 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 4.5 – 7.5 VCE=20V, IC=300mA V
Collector-Emitter saturation voltage VCE(sat) – – 2.8 VGE=15V, IC=300A V
Input capacitance Cies – 19800 – VGE=0V pF
Output capacitance Coes – 4400 – VCE=10V
Reverse transfer capacitance Cres – 2000 – f=1MHz
Turn-on time ton – 0.6 1.2 VCC=300V µs
tr – 0.2 0.6 IC=300A
Turn-off time toff – 0.6 1.0 VGE=±15V
tf – 0.2 0.35 RG=6.8 ohm
Diode forward on voltage VF – – 3.0 IF=300A, VGE=0V V
Reverse recovery time trr – – 0.3 IF=300A µs

Thermal resistance characteristics

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) – – 0.11 IGBT °C/W
Rth(j-c) – – 0.24 Diode °C/W
Rth(c-f)*2 – 0.025 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300N-060 IGBT Module

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C

700 700

600 600

500
Collector current : Ic [A]

Collector current : Ic [A]

500

400 400

300 300

200 200

100 100

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Tj=125°C

10 10
VCE [V]

VCE [V]

種
8 8
Collector-Emitter voltage :

Collector-Emitter voltage :

機 t .
6 6

u c
d
型 r o
4 4

d p
廃 n u e
2 2

n t i
0

s c o 0

Di
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current Switching time vs. Collector current
Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=25°C Vcc=300V, RG=6.8 ohm, VGE=±15V, Tj=125°C

1000 1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]

100 100

10 10
0 100 200 300 400 500 0 100 200 300 400 500
Collector current : Ic [A] Collector current : Ic [A]
2MBI300N-060 IGBT Module

Switching time vs. RG Dynamic input characteristics

Vcc=300V, Ic=300A, VGE=±15V, Tj=25°C Tj=25°C

500 25

1000
Switching time : ton, tr, toff, tf [n sec.]

400

Collector-Emitter voltage : VCE [V]

20

Gate-Emitter voltage : VGE [V]

300 15

100 200 10

100 5

10 00 0
1 5 10 0 500 1000 1500
Gate resistance : RG [ohm] Gate charge : Qg [nC]

Forward current vs. Forward voltage Reverse recovery characteristics

VGE=0V trr, Irr, vs. IF

700

600
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]

種
(Forward current : IF [A] )
Collector current : -Ic [A]

500

機 c t .
400

u
100

d
型 r o
300

d p
廃
50

e
200

i n u
t
100

c o n
Di s
0
0 1 2 3 4 0 100 200 300 400 500

Emitter-Collector voltage VECD [V] Forward current : IF [A]

(Forward voltage : VF [V])

Switching loss vs. Collector current Reversed biased safe operating area
< 15V, Tj <
+VGE=15V, -VGE = = 125°C, RG >
= 6.8 ohm
Vcc=300V, RG=6.8 ohm, VGE=±15V
30 3000
Switching loss : Eon, Eoff, Err [mJ/cycle]

25 2500
Collector current : Ic [A]

20 2000

15 1500

10 1000

5 500

0 0
0 100 200 300 400 500 0 100 200 300 400 500 600
Collector current : Ic [A] Collector-Emitter voltage : VCE [V]
2MBI300N-060 IGBT Module

Capacitance vs. Collector-Emitter voltage

Transient thermal resistance Tj=25°C
100

Capacitance : Cies, Coes, Cres [nF]

Thermal resistance : R th (j-c) [°C/W]

0.1
10

1
0.01

0.001 0.01 0.1 1 0 5 10 15 20 25 30 35

Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]

Outline Drawings, mm

機 種 d u c t .

廃 型 nt i n u e d p r o

s c o
Di

mass : 240g