GenX3TM 600V IGBT IXGH48N60C3D1 VCES = 600V

with Diode IC110 = 48A

VCE(sat) ≤ 2.5V
tfi(typ) = 38ns
High speed PT IGBT for
40-100kHz Switching

TO-247

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

VGES Continuous ±20 V G

C
VGEM Transient ±30 V E ( TAB )
IC25 TC = 25°C (Limited by Leads) 75 A
IC110 TC = 110°C 48 A
G = Gate C = Collector
ID110 TC = 110°C 30 A
E = Emitter TAB = Collector
ICM TC = 25°C, 1ms 250 A
IA TC = 25°C 30 A
EAS TC = 25°C 300 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 100 A Features

(RBSOA) Clamped Inductive Load @VCE < 600 V
z
Optimized for Low Switching Losses
PC TC = 25°C 300 W z
Square RBSOA
TJ -55 ... +150 °C z
Anti-Parallel Ultra Fast Diode
z
TJM 150 °C Fast Switching
z
Tstg -55 ... +150 °C Avalanche Rated
z
International Standard Package
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 Seconds 260 °C
Advantages
FC Mounting Torque 1.13/10 Nm/lb.in
z
Weight 6 g High Power Density
z
Low Gate Drive Requirement

Applications

z
High Frequency Power Inverters
z
Symbol Test Conditions Characteristic Values UPS
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. z
Motor Drives
z
VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V SMPS
z
PFC Circuits
ICES VCE = VCES 300 μA z
Battery Chargers
VGE = 0V TJ = 125°C 1.75 mA z
Welding Machines
IGES VCE = 0V, VGE = ±20V ±100 nA z
Lamp Ballasts
VCE(sat) IC = 30A, VGE = 15V, Note 1 2.3 2.5 V
TJ = 125°C 1.8 V

© 2009 IXYS CORPORATION, All rights reserved DS99945A(01/09)

 IXGH48N60C3D1
Symbol Test Conditions Characteristic Values TO-247 AD Outline
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 30A, VCE = 10V, Note 1 20 30 S

Cies 1960 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 202 pF ∅P

Cres 66 pF
Qg 77 nC
Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES 16 nC
Qgc 32 nC
e
td(on) 19 ns
Dim. Millimeter Inches
tri Inductive Load, TJ = 25°C 26 ns Min. Max. Min. Max.
Eon IC = 30A, VGE = 15V 0.41 mJ A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
td(off) VCE = 400V, RG = 3Ω 60 100 ns A2 2.2 2.6 .059 .098
tfi 38 ns b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
Eoff 0.23 0.42 mJ b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
td(on) 19 ns D 20.80 21.46 .819 .845
tri 26 ns E 15.75 16.26 .610 .640
Inductive Load, TJ = 125°C e 5.20 5.72 0.205 0.225
Eon 0.65 mJ L 19.81 20.32 .780 .800
IC = 30A, VGE = 15V
td(off) 92 ns L1 4.50 .177
VCE = 400V, RG = 3Ω ∅P 3.55 3.65 .140 .144
tfi 95 ns
Q 5.89 6.40 0.232 0.252
Eoff 0.57 mJ R 4.32 5.49 .170 .216
RthJC 0.42 °C/W
RthCS 0.21 °C/W

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, Unless Otherwise Specified)
Symbol Test Conditions Min. Typ. Max.
VF IF = 30A, VGE = 0V, Note 1 2.7 V
TJ = 150°C 1.6 V
IRM IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C 4 A
trr VR = 100V TJ = 100°C 100 ns
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 25 ns
RthJC 0.9 °C/W

Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXGH48N60C3D1

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25ºC @ 25ºC
60 300
VGE = 15V
55 270
13V VGE = 15V
50 11V
240
45
210 13V
40

IC - Amperes
IC - Amperes

35 180
9V
30 150 11V
25 120
20
90
9V
15
60
10
5 7V 30 7V
0 0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts VCE - Volts

Fig. 3. Output Characteristics Fig. 4. Dependence of VCE(sat) on

@ 125ºC Junction Temperature
60 1.2
VGE = 15V
55 VGE = 15V
13V
50 11V 1.1

45 I C = 60A
VCE(sat) - Normalized

1.0
40
IC - Amperes

35 9V
0.9
30
I C = 30A
25 0.8

20
0.7
15
7V
10
0.6
I C = 15A
5
0 0.5
0 0.4 0.8 1.2 1.6 2 2.4 2.8 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance
5.0 100

TJ = 25ºC 90
4.5 80

70
4.0
IC - Amperes

I C = 60A 60
VCE - Volts

30A TJ = -125ºC
3.5 15A 50 25ºC
- 40ºC
40
3.0
30

20
2.5
10

2.0 0
7 8 9 10 11 12 13 14 15 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGE - Volts VGE - Volts

© 2009 IXYS CORPORATION, All rights reserved

 IXGH48N60C3D1

Fig. 7. Transconductance Fig. 8. Gate Charge

50 16
TJ = - 40ºC
45 VCE = 300V
14
40 I C = 30A
12 I G = 10 mA
35 25ºC
g f s - Siemens

10

VGE - Volts
30
125ºC
25 8

20
6
15
4
10
2
5

0 0
0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80
IC - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

10,000 110

f = 1 MHz 100
Cies 90
Capacitance - PicoFarads

80
1,000
IC - Amperes

70

60
Coes
50

40
100
30 TJ = 125ºC

Cres 20 RG = 3Ω
dV / dt < 10V / ns
10

10 0
0 5 10 15 20 25 30 35 40 200 250 300 350 400 450 500 550 600 650
VCE - Volts VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

1.00
Z(th)JC - ºC / W

0.10

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: G_48N60C3D1(5D)01-23-09-B

 IXGH48N60C3D1

Fig. 12. Inductive Switching Fig. 13. Inductive Swiching

Energy Loss vs. Gate Resistance Energy Loss vs. Collector Current
2.4 2.6 2.0 2.0

2.2 Eoff Eon - --- 2.4 E off Eon ----

1.8 1.8
2.0 TJ = 125ºC , VGE = 15V 2.2 RG = 3Ω , VGE = 15V
1.6 1.6
VCE = 400V V CE = 400V
1.8 2.0
1.4 1.4

Eoff - MilliJoules
1.6 1.8
Eoff - MilliJoules

I C = 60A

E
E

on
on
1.2 1.2
1.4 1.6

- MilliJoules
- MilliJoules
1.2 1.4 1.0 1.0
TJ = 125ºC, 25ºC
1.0 1.2 0.8 0.8
0.8 I C = 30A 1.0
0.6 0.6
0.6 0.8
0.4 0.4
0.4 I C = 15A 0.6
0.2 0.2
0.2 0.4

0.0 0.2 0.0 0.0

0 5 10 15 20 25 30 35 15 20 25 30 35 40 45 50 55 60

RG - Ohms I C - Amperes

Fig. 14. Inductive Swiching Fig. 15. Inductive Turn-off

Energy Loss vs. Junction Temperature Switching Times vs. Gate Resistance
2.0 2.0 130 350

1.8 Eoff Eon ---- I C = 60A 1.8 125 tf td(off) - - - - 325

RG = 3Ω , VGE = 15V 120 TJ = 125ºC, VGE = 15V 300
1.6 1.6
VCE = 400V 115 VCE = 400V 275

t d(off) - Nanoseconds
1.4 1.4
110 250
Eoff - MilliJoules

t f - Nanoseconds
E

I C = 60A
on

1.2 1.2 105 225

- MilliJoules

1.0 1.0 100 200

I C = 30A
0.8 0.8 95 175
I C = 30A
90 150
0.6 0.6
85 I C = 15A 125
0.4 0.4
80 100
0.2 0.2 75 75
I C = 15A
0.0 0.0 70 50
25 35 45 55 65 75 85 95 105 115 125 0 5 10 15 20 25 30 35
TJ - Degrees Centigrade RG - Ohms

Fig. 16. Inductive Turn-off Fig. 17. Inductive Turn-off

Switching Times vs. Collector Current Switching Times vs. Junction Temperature
140 110 160 120
130 tf td(off) - - - - 105 tf td(off) - - - -
120 RG = 3Ω , VGE = 15V 100 140 110
RG = 3Ω , VGE = 15V
VCE = 400V
110 95 V CE = 400V
t d(off) - Nanoseconds

120 100
t d(off) - Nanoseconds
t f - Nanoseconds

t f - Nanoseconds

100 90

90 TJ = 125ºC 85 100 90
I C = 60A
80 80

70 75 80 80

60 70 I C = 30A
60 70
50 65 I C = 15A
40 60
40 60
30 TJ = 25ºC 55

20 50 20 50
15 20 25 30 35 40 45 50 55 60 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes TJ - Degrees Centigrade

© 2009 IXYS CORPORATION, All rights reserved

 IXGH48N60C3D1

Fig. 18. Inductive Turn-on Fig. 19. Inductive Turn-on

Switching Times vs. Gate Resistance Switching Times vs. Collector Current
140 50 110 26
tr td(on) - - - - 100 25
tr td(on) - - - -
120 TJ = 125ºC, VGE = 15V 45
90 RG = 3Ω , VGE = 15V 24
VCE = 400V
80 VCE = 400V 23

t d(on) - Nanoseconds
t d(on) - Nanoseconds
100 40
25ºC < TJ < 125ºC

t r - Nanoseconds
t r - Nanoseconds

I C = 60A 70 22
80 35
60 21

50 20
60 30
40 19
40 25 30 18

20 17
20 20
10 16
I C = 15A, 30A
0 15 0 15
0 5 10 15 20 25 30 35 15 20 25 30 35 40 45 50 55 60
RG - Ohms I C - Amperes

Fig. 20. Inductive Turn-on

Switching Times vs. Junction Temperature
80 25

70 24

I C = 60A
60 23
tr td(on) - - - -
t d(on) - Nanoseconds
t r - Nanoseconds

50 RG = 3Ω , VGE = 15V 22
VCE = 400V
40 21

30 I C = 30A 20

20 19

10 I C = 15A 18

0 17
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: G_48N60C3D1(5D)01-23-09-B

 IXGH48N60C3D1
60 1000 30
A TVJ= 100°C TVJ= 100°C
nC A
VR = 300V VR = 300V
50 25
800
Qr IRM IF= 60A
IF IF= 30A
40 IF= 60A 20 IF= 15A
TVJ=150°C 600 IF= 30A
30 IF= 15A 15
TVJ=100°C
400
20 10
TVJ=25°C
200
10 5

0 0 0
0 1 2 3 V 100 A/μs 1000 0 200 400 600 A/μs800 1000
VF -diF/dt -diF/dt

Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr Fig. 23. Peak reverse current IRM
versus -diF/dt versus -diF/dt

2.0 90 20 1.00
TVJ= 100°C TVJ= 100°C
VR = 300V IF = 30A
V μs
ns V FR tfr
1.5 trr 15 0.75
Kf IF= 60A tfr
80
IF= 30A
IF= 15A VFR
1.0 10 0.50
IRM
70
0.5 Qr 5 0.25

0.0 60 0 0.00
0 40 80 120 °C 160 0 200 400 600 800
A/μs 1000 0 200 400 600 A/μs800 1000
T VJ -diF/dt diF/dt
Fig. 24. Dynamic parameters Qr, IRM Fig. 26. Peak forward voltage VFR
Fig. 25. Recovery time trr versus
versus TVJ and tfr versus diF/dt
-diF/dt

1
K/W
Constants for ZthJC calculation:

i Rthi (K/W) ti (s)

0.1
1 0.502 0.0052
Z thJC
2 0.193 0.0003
3 0.205 0.0162

0.01

DSEP 29-06
0.001
0.00001 0.0001 0.001 0.01 0.1 s 1
t
Fig. 27. Transient thermal resistance junction to case

© 2009 IXYS CORPORATION, All rights reserved