GenX3TM 600V IXGK72N60B3H1 VCES = 600V

IGBT w/ Diode IXGX72N60B3H1 IC110 = 72A

VCE(sat) £ 1.8V
Medium Speed Low Vsat PT tfi(typ) = 92ns
IGBTs 5-40 kHz Switching

TO-264 (IXGK)

Symbol Test Conditions Maximum Ratings

VCES TJ = 25C to 150C 600 V G
C
VCGR TJ = 25C to 150C, RGE = 1M 600 V E
Tab
VGES Continuous 20 V
PLUS247 (IXGX)
VGEM Transient 30 V

IC25 TC = 25C ( Chip Capability) 178 A

ILRMS Terminal Current Limit 160 A
IC110 TC = 110C 72 A
G
ICM TC = 25C, 1ms 450 A G C
E Tab
SSOA VGE = 15V, TVJ = 125C, RG = 3 ICM = 240 A
(RBSOA) Clamped Inductive Load @ VCE  VCES G = Gate E = Emitter
PC TC = 25C 540 W C = Collector Tab = Collector

TJ -55 ... +150 C

TJM 150 C
Tstg -55 ... +150 C Features
TL Maximum Lead Temperature for Soldering 300 °C 
Optimized for Low Conduction and
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Switching Losses
Md Mounting Torque (TO-264) 1.13/10 Nm/lb.in 
Square RBSOA

FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Anti-Parallel Ultra Fast Diode
Weight TO-264 10 g
PLUS247 6 g
Advantages


High Power Density

Low Gate Drive Requirement
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
Applications
VGE(th) IC = 250A, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 300 A Power Inverters

TJ = 150C 5 mA UPS

Motor Drives
IGES VCE = 0V, VGE = 20V 100 nA 
SMPS

VCE(sat) IC = 60A, VGE = 15V, Note 1 1.50 1.80 V PFC Circuits
IC = 120A 1.75 V 
Battery Chargers

Welding Machines

Lamp Ballasts

© 2016 IXYS CORPORATION, All Rights Reserved DS99869C(01/16)

 IXGK72N60B3H1
IXGX72N60B3H1
Symbol Test Conditions Characteristic Values TO-264 Outline
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. D
B A
E
gfs IC = 50A, VCE = 10V, Note 1 45 76 S Q S
R
Q1
Cies 6800 pF D

Coes VCE = 25V, VGE = 0V, f = 1MHz 575 pF R1

1 2 3
Cres 80 pF L1 C

Qg(on) 225 nC L

Qge IC = 60A, VGE = 15V, VCE = 0.5 • VCES 40 nC O J M C A M

b c
Qgc 82 nC b1
e
b2 A1
PINS:
1 - Gate BACK SIDE
td(on) 31 ns 2,4 - Collector
A
3 - Emitter
tri Inductive load, TJ = 25°C 33 ns
4 OP O O K M D B M

Eon IC = 50A, VGE = 15V 1.4 mJ

td(off) VCE = 480V, RG = 3 152 240 ns
tfi Note 2 92 150 ns
Eoff 1.0 2.0 mJ

td(on) 29 ns
tri Inductive load, TJ = 125°C 34 ns
Eon IC = 50A, VGE = 15V 2.7 mJ
td(off) VCE = 480V, RG = 3 228 ns
tfi Note 2 142 ns
Eoff 2.2 mJ
RthJC 0.23 C/W
RthCS 0.15 C/W
PLUS247TM Outline
A
A2 E

Q
D2
R
D1
Reverse Diode (FRED) D
4
1 2 3

Symbol Test Conditions Characteristic Values L1

(TJ = 25C, Unless Oherwise Specified) Min. Typ. Max. E1

L

VF IF = 60A, VGE = 0V, Note 1 2.45 V

TJ = 150C 1.40 1.80 V A1
C
b
b2
b4 PINS:

IRM IF = 60A, VGE = 0V, TJ = 100C 8.3 A

e 1 - Gate
2 - Collector
-diF/dt = 200A/sVR = 300V 3 - Emitter
trr 140 ns

RthJC 0.30 C/W

Notes:
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXGK72N60B3H1
IXGX72N60B3H1

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

120
VGE = 15V VGE = 15V
300
13V 13V
100 11V 11V
250
9V
80

I C - Amperes
I C - Amperes

200 9V

60
7V 150

40
100
7V

20 50

0 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 2 3 4 5 6 7 8
VCE - Volts VCE - Volts

Fig. 4. Dependence of VCE(sat) on

Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature
120 1.3
VGE = 15V
VGE = 15V
13V
100 11V 1.2 I C = 120A
9V
VCE(sat) - Normalized

80 1.1
I C - Amperes

I C = 60A
7V
60 1.0

40 0.9

20 0.8 I C = 30A
5V

0 0.7
0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150

VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance
4.5 180

TJ = 25ºC 160
4.0
I C = 120A 140
60A
3.5
30A 120
I C - Amperes
VCE - Volts

3.0 100

2.5 80
TJ = 125ºC
60 25ºC
2.0 - 40ºC
40

1.5
20

1.0 0
5 6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGE - Volts VGE - Volts

© 2016 IXYS CORPORATION, All Rights Reserved

 IXGK72N60B3H1
IXGX72N60B3H1

Fig. 7. Transconductance Fig. 8. Gate Charge

16
120 TJ = - 40ºC
VCE = 300V
14
I C = 60A
100 12 I G = 10mA
25ºC
g f s - Siemens

80 10

V GE - Volts
125ºC
8
60

6
40
4

20
2

0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 220 240
I C - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

10,000 280

Cies 240
Capacitance - PicoFarads

200
1,000
I C - Amperes

160
Coes

120

100
80
TJ = 125ºC
Cres
RG = 3Ω
40 dv / dt < 10V / ns
f = 1 MHz
10 0
0 5 10 15 20 25 30 35 40 100 200 300 400 500 600
VCE - Volts VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance for IGBT

1
Z (th)JC - K / W

0.1

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXGK72N60B3H1
IXGX72N60B3H1

Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance Collector Current
8 9 7 7

Eoff Eon
7 8 6 6
RG = 3ΩVGE = 15V
I C =100A
6 7 VCE = 480V
5 TJ = 125ºC 5

E on - MilliJoules
E off - MilliJoules
E off - MilliJoules

Eon - MilliJoules
5 6
4 4
Eoff Eon
4 5
TJ = 125ºC , VGE = 15V
3 3
I C = 50A
3 VCE = 480V 4
TJ = 25ºC
2 2
2 3
I C = 25A
1 1
1 2

0 1 0 0
0 5 10 15 20 25 30 35 40 45 50 55 20 30 40 50 60 70 80 90 100
RG - Ohms I C - Amperes

Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs.
Junction Temperature Gate Resistance
7 7 240 1300

I C = 25A, 50A, 100A

6 6 220 1150

200 1000
I C = 100A
t f i - Nanoseconds

5 5

t d(off) - Nanoseconds
I C = 100A
E off - MilliJoules

Eon - MilliJoules

180 850
4 4

Eoff Eon 160 700

I C = 50A
3 RG = 3ΩVGE = 15V 3
I C = 50A 140 550
VCE = 480V
2 2
120 400
tf i td(off)
I C = 25A
1 1 100 TJ = 125ºC, VGE = 15V 250

I C = 25A VCE = 480V

0 0 80 100
25 35 45 55 65 75 85 95 105 115 125 0 5 10 15 20 25 30 35 40 45 50 55

TJ - Degrees Centigrade RG - Ohms

Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current Junction Temperature
230 250 220 260

210 235 200 245

TJ = 125ºC

190 220 180 230

tfi td(off)
t d(off) - Nanoseconds
t d(off) - Nanoseconds

I C = 25A, 50A, 100A

t f i - Nanoseconds
t f i - Nanoseconds

RG = 3Ω, VGE = 15V 160 215

170 205
VCE = 480V
150 190 140 200

130 175 120 185

110 160 100 170

tri td(off)
RG = 3Ω, VGE = 15V
90 TJ = 25ºC 145 80 155
VCE = 480V

70 130 60 140
20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125

I C - Amperes TJ - Degrees Centigrade

© 2016 IXYS CORPORATION, All Rights Reserved

 IXGK72N60B3H1
IXGX72N60B3H1

Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance Collector Current
170 140 90 34
tri td(on)
tri td(on)
150 TJ = 125ºC, VGE = 15V 125 80 33
RG = 3Ω, VGE = 15V
VCE = 480V
130 110 VCE = 480V
70 32

t d(on) - Nanoseconds

t d(on) - Nanoseconds
t r i - Nanoseconds

t r i - Nanoseconds
I C = 100A TJ = 25ºC, 125ºC
110 95 60 31

90 80 50 30
25ºC < TJ < 125ºC

70 65 40 29
I C = 50A
50 50 30 28

30 35 20 27
I C = 25A
10 20 10 26
0 5 10 15 20 25 30 35 40 45 50 55 20 30 40 50 60 70 80 90 100
RG - Ohms I C - Amperes

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature
100 35

90 34

80 33
I C = 100A
tri td(on)
t d(on) - Nanoseconds

70 32
t r i - Nanoseconds

RG = 3Ω, VGE = 15V

60 31
VCE = 480V
50 30
I C = 50A
40 29

30 28

20 27

10 I C = 25A 26

0 25
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_72N60B3(76) 6-26-08-C

 IXGK72N60B3H1
IXGX72N60B3H1

Fig. 21 Fig. 22 Fig. 23

Fig. 24 Fig. 25

1.00
1
/W
ºC/ W
Z(th)JC - -[ [ºC ] ]

0.1
0.10
Z(th)JC

0.01
0.01
0.0001 0.001 0.01 0.1 1 10
0.0001 0.001 0.01 Pulse Width [s] 0.1 1 10
Pulse Width [[ms]
s]
Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode)
Fig. 26 Maximum transient thermal impedance junction to case (for diode)

© 2016 IXYS CORPORATION, All Rights Reserved

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