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Advantages
High Power Density
Easy to Mount
Symbol Test Conditions Characteristic Values
Space Savings
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 850 V
Applications
VGS(th) VDS = VGS, ID = 2.5mA 3.5 5.5 V
Switch-Mode and Resonant-Mode
IGSS VGS = 30V, VDS = 0V 100 nA Power Supplies
DC-DC Converters
IDSS VDS = VDSS, VGS = 0V 25 A
PFC Circuits
TJ = 125C 1.5 mA
AC and DC Motor Drives
Robotics and Servo Controls
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 330 m
td(on) 20 ns
Resistive Switching Times
tr 28 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 44 ns
RG = 5 (External)
tf 20 ns
Qg(on) 63 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC
Qgd 26 nC
RthJC 0.23 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Source-Drain Diode
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
IXFP20N85X
IXFH20N85X
o o
Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C
20 45
VGS = 10V VGS = 15V
18 40
11V
16
35
14 10V
9V 30
I D - Amperes
I D - Amperes
12
25
9V
10
20
8
8V
15
6
8V
10
4
7V
2 5 7V
6V
0 0
0 1 2 3 4 5 6 7 0 5 10 15 20 25 30
VDS - Volts VDS - Volts
o
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.
Fig. 3. Output Characteristics @ TJ = 125 C
Junction Temperature
20 3.4
VGS = 10V
18 VGS = 10V
3.0
16 9V
2.6
14
RDS(on) - Normalized
I D = 20A
2.2
I D - Amperes
12
8V
I D = 10A
10 1.8
8 1.4
7V
6
1.0
4
6V 0.6
2
0 0.2
0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages
Drain Current vs. Junction Temperature
3.4 1.2
VGS = 10V
3.0
1.1 BVDSS
BVDSS / VGS(th) - Normalized
o
TJ = 125 C
2.6
RDS(on) - Normalized
1.0
2.2
1.8 o
TJ = 25 C 0.9
1.4 VGS(th)
0.8
1.0
0.6 0.7
0 5 10 15 20 25 30 35 -60 -40 -20 0 20 40 60 80 100 120 140 160
I D - Amperes TJ - Degrees Centigrade
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance
20
20 18
16
16
14
o
TJ = 125 C
I D - Amperes
I D - Amperes
12 o
12 25 C
o
10 - 40 C
8
8
6
4 4
0 0
-50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
TC - Degrees Centigrade VGS - Volts
14 40
o
25 C
35
12
o
g f s - Siemens
125 C
I S - Amperes
30
10
25
8
20
6 TJ = 125 C
o
15
o
4 TJ = 25 C
10
2 5
0 0
0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I D - Amperes VSD - Volts
VDS = 425V
14 Ciss
I D = 10A
I G = 10mA
Capacitance - PicoFarads
12 1,000
10
VGS - Volts
Coss
8 100
4 10
2 Crss
f = 1 MHz
0 1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 1 10 100 1000
QG - NanoCoulombs VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP20N85X
IXFH20N85X
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area
25 100
RDS(on) Limit
25μs
20 100μs
10
EOSS - MicroJoules
15
I D - Amperes
1
10
1ms
o
TJ = 150 C
0.1
o
5 TC = 25 C 10ms
Single Pulse
DC
0 0.01
0 100 200 300 400 500 600 700 800 900 10 100 1,000
VDS - Volts VDS - Volts
0.1
Z(th)JC - K / W
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.