Advanced Technical Information

HiPerRFTM IXFH 12N50F VDSS = 500 V

IXFT 12N50F ID25 = 12 A
Power MOSFETs
RDS(on) = 0.4 W
F-Class: MegaHertz Switching
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr

TO-247 AD (IXFH)

Symbol Test Conditions Maximum Ratings

(TAB)
VDSS TJ = 25°C to 150°C 500 V
VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V

VGS Continuous ±20 V

VGSM Transient ±30 V TO-268 (IXFT) Case Style
ID25 TC = 25°C 12 A
IDM TC = 25°C, pulse width limited by TJM 48 A
IAR TC = 25°C 12 A
G (TAB)
EAR TC = 25°C 20 mJ
S
EAS TC = 25°C 300 mJ
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns G = Gate, D = Drain,
TJ £ 150°C, RG = 2 W S = Source, TAB = Drain

PD TC = 25°C 180 W
Features
TJ -55 ... +150 °C l
RF capable MOSFETs
l
TJM 150 °C Double metal process for low gate
Tstg -55 ... +150 °C resistance
l
Low RDS (on) HDMOSTM process
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C l
Rugged polysilicon gate cell structure
Md Mounting torque TO-264 0.4/6 Nm/lb.in. l
Unclamped Inductive Switching (UIS)
Weight TO-247 6 g rated
l
TO-264 4 g Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier

Symbol Test Conditions Characteristic Values Applications

l
(TJ = 25°C, unless otherwise specified) DC-DC converters
l
min. typ. max. Switched-mode and resonant-mode
power supplies, >500kHz switching
VDSS VGS = 0 V, ID = 250uA 500 V l
DC choppers
l
VGS(th) VDS = VGS, ID = 2.5 mA 3.0 5.0 V 13.5 MHz industrial applications
l
IGSS VGS = ±20 V, VDS = 0 ±100 nA Pulse generation
l
Laser drivers
l
IDSS VDS = 0.8 • VDSS 50 mA RF amplifiers
VGS = 0 V TJ = 125°C 1 mA
Advantages
RDS(on) VGS = 10 V, ID = 0.5 • ID25 0.4 W l
Space savings
Note 1 l
High power density

© 2000 IXYS All rights reserved 98737 (07/00)

This datasheet has been downloaded from http://www.digchip.com at this page

 IXFH 12N50F
IXFT 12N50F
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max. TO-247 AD Outline

gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 6 10 S

Ciss 1870 pF
1 2 3 Terminals:
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 290 pF 1 - Gate
2 - Drain
Crss 90 pF 3 - Source
Tab - Drain
td(on) 11 ns
tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14 ns
td(off) RG = 4.7 W (External), 28 ns
tf 8 ns Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 54 nC A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 nC A2 2.2 2.6 .059 .098
Qgd 25 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
RthJC 0.65 K/W C .4 .8 .016 .031
RthCK (TO-247) 0.25 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values ÆP 3.55 3.65 .140 .144
(TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

IS VGS = 0 V 12 A

ISM Repetitive; 48 A TO-268 Outline

pulse width limited by TJM

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr 250 ns

QRM IF = IS,-di/dt = 100 A/ms, VR = 100 V 0.8 mC

IRM 6.5 A

Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %

Dim. Millimeter Inches
Min. Max. Min. Max.
Min Recommended Footprint A 4.9 5.1 .193 .201
A1 2.7 2.9 .106 .114
A2 .02 .25 .001 .010
b 1.15 1.45 .045 .057
b2 1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E1 13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025