PolarHTTM IXTQ52N30P VDSS = 300 V

Power MOSFET IXTT52N30P ID25 = 52 A

RDS(on) ≤ 66 mΩ
Ω

N-Channel Enhancement Mode

Avalanche Rated

Symbol Test Conditions Maximum Ratings TO-3P (IXTQ)

VDSS TJ = 25° C to 150° C 300 V

VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC = 25° C 52 A G
D (TAB)
S
IDM TC = 25° C, pulse width limited by TJM 150 A
IAR TC = 25° C 52 A
EAR TC = 25° C 30 mJ TO-268 (IXTT)
EAS TC = 25° C 1.0 J

dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns

G
TJ ≤150° C, RG = 4 Ω S D (TAB)
PD TC = 25° C 400 W
G = Gate D = Drain
TJ -55 ... +150 °C S = Source TAB = Drain
TJM 150 °C
Tstg -55 ... +150 °C

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Features

TSOLD Plastic body for 10 s 260 °C
l
International standard packages
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in. l
Unclamped Inductive Switching (UIS)
Weight TO-3P 5.5 g rated
TO-268 5.0 g l
Low package inductance
- easy to drive and to protect
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max. Advantages
BVDSS VGS = 0 V, ID = 250 µA 300 V
l
Easy to mount
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V l
Space savings
l
High power density
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125° C 250 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 57 66 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

© 2006 IXYS All rights reserved DS99115E(12/05)

 IXTQ 52N30P
IXTT 52N30P
Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.

gfs VDS = 10 V; ID = 0.5 ID25, pulse test 20 30 S

Ciss 3490 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 550 pF
Crss 130 pF

td(on) 24 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
td(off) RG = 4 Ω (External) 60 ns
tf 20 ns

Qg(on) 110 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 nC
Qgd 53 nC

RthJC 0.31 ° C/W

RthCS (TO-3P) 0.21 ° C/W

Source-Drain Diode Characteristic Values

(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 52 A

ISM Repetitive 150 A TO-268 (IXTT) Outline

VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25A, -di/dt = 100 A/µs 250 ns
QRM VR = 100V, VGS = 0V 3.0 µC

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXTQ 52N30P
IXTT 52N30P
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25 Deg. C @ 25 deg. C
55 150
VGS = 10V VGS = 10V
50 9V
8V
125
45
40
7V 100 8V
I D - Amperes

35

I D - Amperes
30
75
25 7V
6V
20
50
15

10 6V
25
5 5V
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25
V D S - Volts V D S - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to ID25 Value vs.
@ 125 Deg. C Junction Tem perature
55 3
VGS = 10V
50 2.8 VGS = 10V
8V
2.6
45 7V
2.4
R D S (on) - Normalized

40
2.2
I D - Amperes

35
2
30 1.8 I D = 52A
25 1.6
6V I D = 26A
20 1.4
1.2
15
1
10 5V 0.8
5 0.6
0 0.4
0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alized to ID25 Fig. 6. Drain Current vs. Case
Value vs. ID Tem perature
3.8 55

VGS = 10V 50
3.4
45
3
40
R D S (on) - Normalized

I D - Amperes

2.6 35
30
2.2 TJ = 125ºC
25
1.8 20

1.4 15

TJ = 25ºC 10
1
5
0.6 0
0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2006 IXYS All rights reserved

 IXTQ 52N30P
IXTT 52N30P
Fig. 7. Input Adm ittance Fig. 8. Transconductance
100 60

90
50
80
TJ = -40ºC
70
40 25ºC
I D - Amperes

g f s - Siemens
60 125ºC

50 30

40
20
30
TJ = 125ºC
20 25ºC
10
-40ºC
10

0 0
4 4.5 5 5.5 6 6.5 7 7.5 8 0 10 20 30 40 50 60 70 80 90 100
V G S - Volts I D - Amperes

Fig. 9. Source Current vs.

Fig. 10. Gate Charge
Source-To-Drain Voltage
150 10
VDS = 150V
9
I D = 26A
125
8 I G = 10mA

7
100
I S - Amperes

VG S - Volts

75 5

4
50
3
TJ = 125ºC
2
25 TJ = 25ºC
1

0 0
0.4 0.6 0.8 1 1.2 1.4 0 20 40 60 80 100 120
V S D - Volts Q G - nanoCoulombs

Fig. 12. Forw ard-Bias Safe

Fig. 11. Capacitance
Operating Area
10000 1000
f = 1MHz TC = 25ºC
C iss R DS(on) Limit
Capacitance - pF

100 25µs
I D - Amperes

1ms
1000
C oss 10ms

10 DC

C rss

100 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
 IXTQ 52N30P
IXTT 52N30P
Fig. 13. Maxim um Transient Therm al Resistance

R (th) J C - (ºC/W) 1.00

0.10

0.01
1 10 100 1000
Pulse Width - milliseconds

© 2006 IXYS All rights reserved