TrenchMVTM IXTA60N10T VDSS = 100V

Power MOSFET IXTP60N10T ID25 = 60A

RDS(on) ≤ 18mΩΩ
N-Channel Enhancement Mode
Avalanche Rated TO-263 (IXTA)

G
S
Symbol Test Conditions Maximum Ratings (TAB)
VDSS TJ = 25°C to 175°C 100 V
TO-220 (IXTP)
VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V
VGSM Transient ± 30 V
ID25 TC = 25°C 60 A
IDM TC = 25°C, pulse width limited by TJM 180 A
G
D
IA TC = 25°C 10 A S (TAB)
EAS TC = 25°C 500 mJ
PD TC = 25°C 176 W G = Gate D = Drain
TJ -55 ... +175 °C S = Source TAB = Drain
TJM 175 °C
Tstg -55 ... +175 °C
TL 1.6mm (0.062in.) from case for 10s 300 °C Features
TSOLD Plastic body for 10 seconds 260 °C
z
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in International standard packages
z
175°C Operating Temperature
Weight TO-263 2.5 g z
Avalanche Rated
TO-220 3.0 g z
Low RDS(on)

Advantages

z
Easy to mount
z
Space savings
z
High power density

Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max. z
DC/DC Converters and Off-line UPS
BVDSS VGS = 0V, ID = 250μA 100 V z
Primary Switch for 24V and 48V
VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 V Systems
z
High Current Switching Applications
IGSS VGS = ± 20V, VDS = 0V ± 100 nA z
Distributed Power Architechtures
IDSS VDS = VDSS 1 μA and VRMs
z
VGS = 0V TJ = 150°C 100 μA Electronic Valve Train Systems
z
High Voltage Synchronous Recifier
RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 14.8 18 mΩ

© 2007 IXYS CORPORATION, All rights reserved DS99647B(08/08)

 IXTA60N10T
IXTP60N10T
Symbol Test Conditions Characteristic Values
TO-263 (IXTA) Outline
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 25 42 S
Ciss 2650 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 335 pF
Crss 60 pF
td(on) 27 ns
Resistive Switching Times
tr 40 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
td(off) 43 ns
RG = 15Ω (External)
tf 37 ns Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Qg(on) 49 nC
Dim. Millimeter Inches
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 10A 15 nC Min. Max. Min. Max.
Qgd 11 nC A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
RthJC 0.85 °C/W b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
RthCH TO-220 0.50 °C/W c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
Source-Drain Diode E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
Symbol Test Conditions Characteristic Values e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
TJ = 25°C unless otherwise specified) Min. Typ. Max. L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
IS VGS = 0V 60 A L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
ISM Repetitive, pulse width limited by TJM 240 A R 0.46 0.74 .018 .029

VSD IF = 25A, VGS = 0V, Note 1 1.2 V

trr 59 ns TO-220 (IXTP) Outline
IF = 0.5 • IS, VGS = 0V
IRM -di/dt = 100A/μs 3.8 A
QRM VR = 0.5 • VDSS 112 nC

Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact location must be Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
5mm or less from the package body.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTA60N10T
IXTP60N10T
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
60 200
VGS = 10V
55 VGS = 10V
180
9V
50 8V 160
45 9V
140
40

ID - Amperes
ID - Amperes

7V 120
35
8V
30 100
25 80
20
60 7V
15
40
10 6V
5 20
6V
0 0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 2 4 6 8 10 12 14 16 18 20 22 24 26
VDS - Volts VDS - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 30A Value

@ 150ºC vs. Junction Temperature
60 2.8
VGS = 10V
55 2.6 VGS = 10V
9V
50 8V 2.4
45 2.2
RDS(on) - Normalized

40 2.0
ID - Amperes

35 7V
1.8
I D = 60A
30 1.6
I D = 30A
25 1.4
20 6V
1.2
15 1.0
10 5V 0.8
5 0.6
0 0.4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 30A Value

vs. Drain Current Fig. 6. Drain Current vs. Case Temperature
65
3.2
VGS = 10V 60
3.0 TJ = 175ºC
15V - - - - 55
2.8
50
2.6
RDS(on) - Normalized

45
2.4
ID - Amperes

40
2.2
35
2.0
30
1.8 25
1.6 20
TJ = 25ºC
1.4 15
1.2 10
1.0 5
0.8 0
0 15 30 45 60 75 90 105 120 135 150 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes TC - Degrees Centigrade

© 2007 IXYS CORPORATION, All rights reserved

 IXTA60N10T
IXTP60N10T

Fig. 7. Input Admittance Fig. 8. Transconductance

90 70

TJ = - 40ºC
80
60
70
50
60

g f s - Siemens
25ºC
ID - Amperes

50 40

40 TJ = 150ºC 30 150ºC
25ºC
30 - 40ºC
20
20
10
10

0 0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 10 20 30 40 50 60 70 80 90
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
10
180
9 VDS = 50V
160 I D = 10A
8 I G = 10mA
140
7
120
IS - Amperes

VGS - Volts

6
100
5
80
TJ = 150ºC 4
60
3
TJ = 25ºC
40
2

20 1

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 5 10 15 20 25 30 35 40 45 50
VSD - Volts QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Fig. 11. Capacitance
Impedance
10,000
1.00
f = 1 MHz
Capacitance - PicoFarads

Ciss
1,000
Z(th)JC - ºC / W

0.10
Coss

100

Crss

10 0.01
0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS - Volts Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_60N10T(2V)8-07-08-A

 IXTA60N10T
IXTP60N10T
Fig. 13. Resistive Turn-on Rise Time Fig. 14. Resistive Turn-on Rise Time
vs. Junction Temperature vs. Drain Current
60 60
RG = 15Ω RG = 15Ω
55 VGS = 10V 55 VGS = 10V

VDS = 50V VDS = 50V TJ = 25ºC

50 50
t r - Nanoseconds

t r - Nanoseconds
45 45

40 I D = 30A 40

35 35
TJ = 125ºC
I D = 10A
30 30

25 25
25 35 45 55 65 75 85 95 105 115 125 10 12 14 16 18 20 22 24 26 28 30
TJ - Degrees Centigrade ID - Amperes

Fig. 15. Resistive Turn-on Switching Times Fig. 16. Resistive Turn-off Switching Times
vs. Gate Resistance vs. Junction Temperature
170 80 39 64
tr td(on) - - - -
150 TJ = 125ºC, VGS = 10V 70
38 60
VDS = 50V I D = 10A

t d(off) - Nanoseconds
130 60
t d(on) - Nanoseconds
t r - Nanoseconds

t f - Nanoseconds

37 tf td(off) - - - - 56
I D = 30A
110 50 RG = 15Ω, VGS = 10V

36 VDS = 50V 52
10A < I D < 30A
90 I D = 10A 40 I D = 30A

35 48
70 30

34 44
50 20

30 10 33 40
15 20 25 30 35 40 45 50 55 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Switching Times Fig. 18. Resistive Turn-off Switching Times
vs. Drain Current vs. Gate Resistance
40 67 120 185
tf td(off) - - - - 110 tf td(off) - - - - I D = 10A, 30A
170
39 63
RG = 15Ω, VGS = 10V TJ = 125ºC, VGS = 10V
VDS = 50V 100 155
38 59 VDS = 50V
t
d(off)

t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds

90 140
37 TJ = 125ºC 55
80 125
- Nanoseconds

36 51
70 110
35 47
60 95
34 43
TJ = 25ºC 50 80

33 39 40 65

32 35 30 50
10 12 14 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 55
ID - Amperes RG - Ohms

© 2007 IXYS CORPORATION, All rights reserved IXYS REF: T_60N10T(2V)8-07-08-A