High Voltage IXTH 6N120 VDSS = 1200 V

Power MOSFET IXTT 6N120 ID25 = 6A

RDS(on) = 2.6 Ω

N-Channel Enhancement Mode

Avalanche Rated

Preliminary Data Sheet

Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH)

VDSS TJ = 25°C to 150°C 1200 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V
VGS Continuous ±20 V (TAB)
VGSM Transient ±30 V
ID25 TC = 25°C 6 A

IDM TC = 25°C, pulse width limited by TJM 24 A TO-268 (IXTT) Case Style
IAR TC = 25°C 6 A
EAR TC = 25°C 25 mJ
EAS TC = 25°C 500 mJ G (TAB)
S
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
G = Gate D = Drain
TJ ≤ 150°C, RG = 2 Ω S = Source TAB = Drain
PD TC = 25°C 300 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C Features

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C z

International standard packages
z
Md Mounting torque 1.13/10 Nm/lb.in. Low RDS (on) HDMOSTM process
z
Rugged polysilicon gate cell structure
Weight TO-247 AD 6 g z
Unclamped Inductive Switching (UIS)
TO-268 4 g
rated
z
Low package inductance
- easy to drive and to protect

Symbol Test Conditions Characteristic Values Advantages

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
z
Easy to mount
VDSS VGS = 0 V, ID = 250 µA 1200 V z
Space savings
z
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V High power density

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS TJ = 25°C 25 µA

VGS = 0 V TJ = 125°C 500 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 2.6 Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

© 2004 IXYS All rights reserved DS99024B(01/04)

 IXTH 6N120
IXTT 6N120
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) TO-247 AD Outline
Min. Typ. Max.

gfs VDS = 20 V; ID = 0.5 ID25, pulse test 3 5 S

Ciss 1950 pF 1 2 3

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 175 pF

C rss 60 pF

td(on) 28 ns
tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 ns
td(off) RG = 4.7 Ω (External) 42 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
tf 18 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 56 nC
A 4.7 5.3 .185 .209
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 13 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgd 25 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
RthJC 0.42 K/W b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
RthCK (TO-247) 0.21 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values
∅P 3.55 3.65 .140 .144
(TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IS VGS = 0 V 6 A

ISM Repetitive 24 A
TO-268 Outline
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Trr IF = 6A 850 ns
-di/dt = 100 A/µs

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain
Min Recommended Footprint

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
 IXTH 6N120
IXTT 6N120

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25 Deg. C @ 25 deg. C
6 10
VGS = 10V VGS = 10V
5 9V
8 9V
8V 8V
4 7V 7V
ID - Amperes

ID - Amperes
6
6V
3
6V
4
2

5V 2
1
5V

0 0
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
V DS - Volts V DS - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID25 Value vs.

@ 125 Deg. C Junction Temperature
6 3.1
VGS = 10V 2.8 VGS = 10V
5 9V
2.5
RDS(on) - Normalized
8V
7V
4 2.2
ID - Amperes

6V
1.9
3 ID = 6A
1.6

2 1.3 ID = 3A
5V 1
1
0.7

0 0.4
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
V DS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to I D25 Fig. 6. Drain Current vs. Case

Value vs. I D Temperature
2.8 7
VGS = 10V
2.5 6
T J = 125ºC
RDS(on) - Normalized

2.2 5
ID - Amperes

1.9 4

1.6 3

1.3 T J = 25ºC 2

1 1

0.7 0
0 1.5 3 4.5 6 7.5 9 -50 -25 0 25 50 75 100 125 150
ID - Amperes TC - Degrees Centigrade

© 2004 IXYS All rights reserved

 IXTH 6N120
IXTT 6N120

Fig. 7. Input Admittance Fig. 8. Transconductance

6 12

5 10
T J = -40ºC
4 25ºC
ID - Amperes

Gfs - Siemens
125ºC
3 T J = -40ºC
6
25ºC
125ºC
2 4

1 2

0 0
3.5 4 4.5 5 5.5 6 6.5 0 1.5 3 4.5 6 7.5 9
V GS - Volts ID - Amperes

Fig. 9. Source Current vs. Source-To-Drain

Fig. 10. Gate Charge
Voltage
20 10
VDS = 600V
16 8 ID = 3A
IG = 10mA
IS - Amperes

VGS - Volts

12 6

8 4
T J = 125ºC

4 2
T J = 25ºC
0 0
0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60
V SD - Volts QG - nanoCoulombs

Fig. 12. Maximum Transient Thermal

Fig. 11. Capacitance
Resistance
10000 1
f = 1M hz
Capacitance - pF

C iss
R(th)JC - (ºC/W)

1000

C oss 0.1

100

C rss

10 0.01
0 5 10 15 20 25 30 35 40 1 10 100 1000
V DS - Volts Pulse Width - milliseconds

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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