PolarHVTM HiPerFET IXFN 80N50P VDSS = 500 V

Power MOSFET ID25 = 66 A

RDS(on) ≤ Ω
65 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)

E153432
VDSS TJ = 25° C to 150° C 500 V
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V
S
VGS Transient ± 40 V G
VGSM Continuous ± 30 V

ID25 TC = 25° C 66 A
IDM TC = 25° C, pulse width limited by TJM 200 A
S
IAR TC = 25° C 80 A D
EAR TC = 25° C 80 mJ
EAS TC = 25° C 3.0 J
G = Gate D = Drain
S = Source
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ ≤150° C, RG = 2 Ω Either source tab S can be used forsource
PD TC = 25° C 700 W current or Kelvin gate return.

TJ -55 ... +150 °C

TJM 150 °C
Tstg -55 ... +150 °C

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C

VISOL 50/60 Hz; IISOL ≤1 mA 2500 V~ Features

l
Fast intrinsic diode
Md Mounting torque 1.5/13 Nm/ib.in. l
International standard package
Terminal connection torque (M4) 1.5/13 Nm/ib.in. l
Unclamped Inductive Switching (UIS)
Weight 30 g rated
l
UL recognized.
l
Isolated mounting base

Symbol Test Conditions Characteristic Values

(TJ = 25° C unless otherwise specified) Min. Typ. Max. Advantages
l
BVDSS VGS = 0 V, ID = 500 µA 500 V Easy to mount
l
Space savings
l
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V High power density

IGSS VGS = ± 30 VDC, VDS = 0 ± 200 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125° C 1 mA

RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 65 mΩ

© 2006 IXYS All rights reserved DS99477E(01/06)

 IXFN 80N50P

Symbol Test Conditions Characteristic Values

miniBLOC, SOT-227B (IXFN) Outline
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, Note 1 35 70 S

Ciss 12.7 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 pF
Crss 120 pF

td(on) 25 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5*ID25 27 ns
td(off) RG = 2 Ω (External) 70 ns
tf 18 ns

Qg(on) 195 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 nC
Qgd 64 nC

RthJC 0.18° C/W

RthCK 0.05 ° C/W

Source-Drain Diode Characteristic Values

TJ = 25° C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 80 A

ISM Repetitive 200 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IF = 25 A, -di/dt = 100 A/µs 200 ns

QRM VR = 100 V, VGS = 0 V 0.8 µC
IRM 8 A

Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
 IXFN 80N50P

Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte ris tics
@ 25° C @ 25° C
80 180
V GS = 10V V GS = 10V
70 160
8V 8V
140
60
7V
120
I D - Amperes

50 7V

I D - Amperes
100
40
80
30 6V
60
20 6V
40
10
5V 20
5V
0 0
0 1 2 3 4 5 6 0 3 6 9 12 15 18 21 24 27
V D S - V olts V D S - V olts

Fig. 3. Output Characte r is tics Fig. 4. RDS(on ) Norm alize d to ID = 40A

@ 125° C V alue vs . Junction Te m pe rature
80 3.4
V GS = 10V
70 3.1 V GS = 10V
7V
2.8
R D S ( o n ) - Normalized

60
2.5
I D - Amperes

50 6V
2.2

40 1.9 I D = 80A

1.6
30
1.3 I D = 40A
20
5V 1
10
0.7

0 0.4
0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150
V D S - V olts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alize d to ID = 40A Fig. 6. Dr ain Cur r e nt vs . Cas e

V alue vs . Drain Curr e nt T e m p e r atur e
3.2 70
3 V GS = 10V
2.8 TJ = 125 ° C 60
R D S ( o n ) - Normalized

2.6
50
2.4
I D - Amperes

2.2 40
2
1.8 30
1.6
20
1.4
1.2
TJ = 25 ° C 10
1
0.8 0
0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150
I D - A mperes TC - Degrees Centigrade

© 2006 IXYS All rights reserved

 IXFN 80N50P

Fig. 7. Input Adm ittance Fig. 8. Transconductance

140 140

120 120

TJ = -40°C
100 100
25°C

g f s - Siemens
I D - Amperes

80 80 125°C
TJ = 125°C

60 25°C 60
-40°C
40 40

20 20

0 0
4 4.5 5 5.5 6 6.5 7 7.5 0 20 40 60 80 100 120 140
V G S - Volts I D - Amperes

Fig. 9. Source Current vs.

Fig. 10. Gate Charge
Source-To-Drain Voltage
250 10

9 VDS = 250V

200 8 I D = 40A

7 I G = 10mA
I S - Amperes

VG S - Volts

150 6

100 4

TJ = 125°C 3

50 2
TJ = 25°C
1
0 0
0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180 200
V S D - Volts Q G - NanoCoulombs

Fig. 12. Forw ard-Bias

Fig. 11. Capacitance Safe Operating Area
100000 1000
f = 1MHz
Capacitance - PicoFarads

R DS(on) Limit
10000
C iss
I D - Amperes

100

25µs
1000
C oss 100µs

1ms
10
100
TJ = 150°C DC 10ms
C rss
TC = 25°C
10 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXFN 80N50P

Fig. 13. Maxim um Transient Therm al Resistance

1.00
R ( t h ) J C - ºC / W

0.10

0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

© 2006 IXYS All rights reserved

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

IXYS:
IXFN80N50P