PolarHTTM IXTA 36N30P VDSS = 300 V

Power MOSFET IXTP 36N30P ID25 = 36 A

IXTQ 36N30P RDS(on) ≤ Ω
110 mΩ

N-Channel Enhancement Mode

Avalanche Rated

TO-263 (IXTA)
Symbol Test Conditions Maximum Ratings

VDSS TJ = 25° C to 150° C 300 V

G
VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V S
D(TAB)
VGS Continuous ±30 V
VGSM Transient ±40 V
TO-220 (IXTP)
ID25 TC = 25° C 36 A
IDM TC = 25° C, pulse width limited by TJM 90 A
IAR TC = 25° C 36 A
EAR TC = 25° C 30 mJ G D(TAB)
D S
EAS TC = 25° C 1.0 J
TO-3P (IXTQ)
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ ≤150° C, RG = 10 Ω
PD TC = 25° C 300 W
TJ -55 ... +150 °C
TJM 150 °C G
Tstg -55 ... +150 °C D D(TAB)
S

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 s 260 °C G = Gate D = Drain
S = Source TAB = Drain
Md Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.

Weight TO-3P 5.5 g Features

TO-220 4 g
l
TO-263 3 g International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
Symbol Test Conditions Characteristic Values - easy to drive and to protect
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 300 V
Advantages
VGS(th) VDS = VGS, ID = 250µA 3.0 5.5 V
l
Easy to mount
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA l
Space savings
l
High power density
IDSS VDS = VDSS 1 µA
VGS = 0 V TJ = 125° C 200 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 92 110 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

© 2005 IXYS All rights reserved DS99155E(10/05)

 IXTA 36N30P IXTP 36N30P
IXTQ 36N30P

Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline

(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 12 22 S

Ciss 2250 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 370 pF
Crss 90 pF

td(on) 24 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 30 ns
td(off) RG = 10 Ω (External) 97 ns
tf 28 ns

Qg(on) 70 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 nC
Qgd 35 nC

RthJC 0.42°C/W
RthCS (TO-3P) 0.21 °C/W
(TO-220) 0.25 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 36 A

ISM Repetitive 90 A
TO-220 (IXTP) Outline
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 25 A, -di/dt = 100 A/µs 250 ns

QRM VR = 100 V, VGS = 0 V 2.0 µC

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
36 90
33 VGS = 10V VGS = 10V
80
9V
30
70 9V
27 8V
24 60
I D - Amperes

I D - Amperes
21 8V
50
18 7V
40
15
12 30 7V
9
20
6 6V
6V
10
3
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 3 6 9 12 15 18 21 24 27 30
V D S - Volts V D S - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25

@ 125ºC Value vs. Junction Tem perature
36 3.1
33 VGS = 10V
2.8 VGS = 10V
30 9V
8V 2.5
R D S ( o n ) - Normalized

27
24 2.2
I D - Amperes

21 7V
1.9
I D = 36A
18
1.6
15
12 6V I D = 18A
1.3
9
1
6
5V 0.7
3
0 0.4
0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case

0.5 ID25 Value vs. ID Tem perature
4.2 40

3.8 VGS = 10V 35

3.4 30
R D S ( o n ) - Normalized

3 TJ = 125ºC
I D - Amperes

25
2.6
20
2.2
15
1.8
10
1.4
TJ = 25ºC 5
1

0.6 0
0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2005 IXYS All rights reserved

 IXTA 36N30P IXTP 36N30P
IXTQ 36N30P

Fig. 7. Input Adm ittance Fig. 8. Transconductance

70 35

60 30

50 25 TJ = -40ºC

g f s - Siemens
I D - Amperes

25ºC
40 20 125ºC

30 15

TJ = 125ºC
20 10
25ºC
-40ºC
10 5

0 0
4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 10 20 30 40 50 60 70 80 90
V G S - Volts I D - Amperes

Fig. 9. Source Current vs.

Fig. 10. Gate Charge
Source-To-Drain Voltage
100 10

90 9 VDS = 150V

80 8 I D = 18A

7 I G = 10mA
70
I S - Amperes

VG S - Volts

60 6

50 5

40 4
TJ = 125ºC
30 3

20 2
TJ = 25ºC
10 1

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 40 50 60 70
V S D - Volts Q G - nanoCoulombs

Fig. 12. Forw ard-Bias

Fig. 11. Capacitance Safe Operating Area
10000 1000
f = 1MHz
C iss TJ = 150ºC

TC = 25ºC
Capacitance - picoFarads

R DS(on) Limit
I D - Amperes

1000 100

C oss
25µs
100µs
100 10 1ms

C rss 10ms
DC

10 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXTA 36N30P IXTP 36N30P
IXTQ 36N30P

Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e

0.45

0.40

0.35
R ( t h ) J C - ºC / W

0.30

0.25

0.20

0.15

0.10

0.05
1 10 100 1000
Pu ls e W id th - m illis e c o n d s

© 2005 IXYS All rights reserved

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