Advance Technical Information

XPTTM IGBT 600V IXXH50N60B3D1 VCES = 600V

GenX3TM w/ Diode IC110 = 50A
VCE(sat) ≤ 1.80V
tfi(typ) = 135ns
Extreme Light Punch Through
IGBT for 5-30 kHz Switching

TO-247 AD
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 600 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V G
C Tab
VGEM Transient ±30 V E

IC25 TC = 25°C 120 A

IC110 TC = 110°C 50 A G = Gate C = Collector
IF110 TC = 110°C 30 A E = Emitter Tab = Collector

ICM TC = 25°C, 1ms 200 A

IA TC = 25°C 25 A
EAS TC = 25°C 200 mJ
Features
SSOA VGE = 15V, TVJ = 150°C, RG = 5Ω ICM = 100 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES z
Optimized for 5-30kHz Switching
z
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs Square RBSOA
z
(SCSOA) RG = 22Ω, Non Repetitive Anti-Parallel Ultra Fast Diode
z
Avalanche Capability
PC TC = 25°C 600 W z
Short Circuit Capability
TJ -55 ... +175 °C z
International Standard Package
TJM 175 °C
Tstg -55 ... +175 °C
Advantages
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C z
High Power Density
z
Md Mounting Torque 1.13/10 Nm/lb.in. 175°C Rated
z
Extremely Rugged
Weight 6 g z
Low Gate Drive Requirement

Applications
Symbol Test Conditions Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. Power Inverters
z
UPS
BVCES IC = 250μA, VGE = 0V 600 V z
Motor Drives
VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V z
SMPS
z
ICES VCE = VCES, VGE = 0V 25 μA PFC Circuits
z
Battery Chargers
TJ = 150°C 3 mA z
Welding Machines
IGES VCE = 0V, VGE = ±20V ±100 nA z
Lamp Ballasts
VCE(sat) IC = 36A, VGE = 15V, Note 1 1.55 1.80 V
TJ = 150°C 1.80 V

© 2011 IXYS CORPORATION, All Rights Reserved DS100302(02/11)

 IXXH50N60B3D1
Symbol Test Conditions Characteristic Values
TO-247 (IXXH) Outline
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 36A, VCE = 10V, Note 1 12 19 S
Cies 2230 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 195 pF ∅P
1 2 3

Cres 44 pF
Qg(on) 70 nC
Qge IC = 36A, VGE = 15V, VCE = 0.5 • VCES 16 nC
Qgc 29 nC
td(on) 27 ns e

tri Inductive load, TJ = 25°C 40 ns Terminals: 1 - Gate 2 - Collector

3 - Emitted
Eon IC = 36A, VGE = 15V 0.67 mJ
Dim. Millimeter Inches
td(off) VCE = 360V, RG = 5Ω 100 150 ns
Min. Max. Min. Max.
tfi Note 2 135 ns A 4.7 5.3 .185 .209
Eoff 0.74 1.20 mJ A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
td(on) 30 ns b 1.0 1.4 .040 .055
Inductive load, TJ = 150°C b1 1.65 2.13 .065 .084
tri 45 ns b2 2.87 3.12 .113 .123
Eon IC = 36A, VGE = 15V 1.40 mJ C .4 .8 .016 .031
td(off) VCE = 360V, RG = 5Ω 130 ns D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
tfi Note 2 190 ns e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
Eoff 1.20 mJ L1 4.50 .177
RthJC 0.25 °C/W ∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
RthCS 0.21 °C/W R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 24A, VGE = 0V, Note 1 2.7 V
TJ = 150°C 1.6 V
IRM IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C 4 A
trr VR = 100V TJ = 100°C 100 ns
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 25 ns
RthJC 0.9 °C/W

Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXXH50N60B3D1

Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC

200
70 VGE = 15V VGE = 15V
180
14V
13V
60 12V 160
14V
140
50
IC - Amperes

IC - Amperes
120
11V 13V
40
100
12V
30 80
10V
60 11V
20
9V
40 10V
10
8V 20 9V
7V
0 0 7V
0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30
VCE - Volts VCE - Volts

Fig. 4. Dependence of VCE(sat) on

Fig. 3. Output Characteristics @ T J = 150ºC Junction Temperature
2.0
70 VGE = 15V VGE = 15V
14V 1.8
13V
60 12V I C = 72A
1.6
VCE(sat) - Normalized

50
11V
IC - Amperes

1.4
40

10V 1.2 I = 36A

30 C

1.0
20 9V

10 8V 0.8
I C = 18A
7V
0 6V 0.6
0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Fig. 6. Input Admittance
Gate-to-Emitter Voltage
6.0 100

5.5 TJ = 25ºC 90

5.0 80

4.5 70
IC - Amperes

4.0 60
VCE - Volts

I C = 72A
3.5 50
36A
18A 40
3.0
TJ = 150ºC
2.5 30 25ºC
- 40ºC
2.0 20

1.5 10

1.0 0
8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 11 12 13
VGE - Volts VGE - Volts

© 2011 IXYS CORPORATION, All Rights Reserved

 IXXH50N60B3D1

Fig. 7. Transconductance Fig. 8. Gate Charge

32 16
TJ = - 40ºC, 25ºC, 150ºC VCE = 300V
28 14
I C = 36A
I G = 10mA
24 12
g f s - Siemens

20 10

VGE - Volts
16 8

12 6

8 4

4 2

0 0
0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70
IC - Amperes QG - NanoCoulombs

Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area

10,000 110

f = 1 MHz 100
Cies
90
Capacitance - PicoFarads

80
1,000
70
IC - Amperes

60
Coes
50

40
100
30
TJ = 150ºC
20
RG = 5Ω
Cres
10 dv / dt < 10V / ns

10 0
0 5 10 15 20 25 30 35 40 100 200 300 400 500 600
Fig. 11. Maximum Transient Thermal Impedance
VCE - Volts VCE - Volts
1

Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance
1,000 0.4
a a sss

VCE(sat) Limit

100
Z(th)JC - ºC / W

0.1
ID - Amperes

25µs
10
100µs

1 1ms
TJ = 175ºC
TC = 25ºC
10ms
Single Pulse
DC
0 0.01
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1
VDS - Volts Pulse Width - Second

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXXH50N60B3D1
Fig. 13. Inductive Switching Energy Loss vs. Fig. 14. Inductive Switching Energy Loss vs.
Gate Resistance Collector Current
3.0 6 2.0 5

Eoff Eon - --- 1.8 Eoff Eon ----

RG = 5Ω , VGE = 15V TJ = 150ºC
TJ = 150ºC , VGE = 15V
2.5 5 1.6 4
VCE = 360V VCE = 360V
I C = 72A 1.4

Eon - MilliJoules
Eoff - MilliJoules

Eon - MilliJoules

Eoff - MilliJoules
2.0 4 1.2 3

1.0

1.5 3 0.8 2
TJ = 25ºC
0.6

1.0 I C = 36A 2 0.4 1

0.2

0.5 1 0.0 0
5 10 15 20 25 30 35 40 45 50 15 20 25 30 35 40 45 50 55 60 65 70 75

RG - Ohms IC - Amperes

Fig. 15. Inductive Switching Energy Loss vs. Fig. 16. Inductive Turn-off Switching Times vs.
Junction Temperature Gate Resistance
2.2 4.5 240 350

2 Eoff Eon ---- 4

tfi td(off) - - - -
220 TJ = 150ºC, VGE = 15V 300
RG = 5Ω , VGE = 15V
1.8 VCE = 360V 3.5 VCE = 360V
I C = 72A 200 250

t d(off) - Nanoseconds
t f i - Nanoseconds

1.6 3
E on - MilliJoules
E off - MilliJoules

I C = 36A
1.4 2.5 180 200

1.2 2 160 150

1 I C = 36A 1.5 I C = 72A

140 100
0.8 1
120 50
0.6 0.5

0.4 0 100 0
25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50
TJ - Degrees Centigrade RG - Ohms

Fig. 17. Inductive Turn-off Switching Times vs. Fig. 18. Inductive Turn-off Switching Times vs.
Collector Current Junction Temperature
300 220 240 150

tfi td(off) - - - - 220

tfi td(on) - - - - 140
270 200
RG = 5Ω , VGE = 15V RG = 5Ω , VGE = 15V
TJ = 150ºC
240 180 200 VCE = 360V 130
VCE = 360V
t d(off) - Nanoseconds
t f i - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds

210 160 180 120

180 140 160 I C = 36A 110

150 120 140 100

TJ = 25ºC
120 100 120 90

90 80 100 80

60 60 80 I C = 72A 70

30 40 60 60
15 20 25 30 35 40 45 50 55 60 65 70 75 25 50 75 100 125 150
IC - Amperes TJ - Degrees Centigrade

© 2011 IXYS CORPORATION, All Rights Reserved

 IXXH50N60B3D1
Fig. 19. Inductive Turn-on Switching Times vs. Fig. 20. Inductive Turn-on Switching Times vs.
Gate Resistance Collector Current
240 120 160 44

tri td(on) - - - - 140 tri td(on) - - - - 41

200 TJ = 150ºC, VGE = 15V 100 RG = 5Ω , VGE = 15V
VCE = 360V 120 VCE = 360V 38

t d(on) - Nanoseconds

t d(on) - Nanoseconds
t r i - Nanoseconds

t r i - Nanoseconds
160 80
I C = 36A 100 35

120 60 80 TJ = 150ºC 32
I C = 72A
60 29
80 40
40 TJ = 25ºC 26

40 20
20 23

0 0 0 20
5 10 15 20 25 30 35 40 45 50 15 20 25 30 35 40 45 50 55 60 65 70 75
RG - Ohms IC - Amperes

Fig. 21. Inductive Turn-on Switching Times vs.

Junction Temperature
180 44

160
tri td(on) - - - - 41
RG = 5Ω , VGE = 15V
140 VCE = 360V 38
t d(on) - Nanoseconds
t r i - Nanoseconds

120 35
I C = 72A
100 32

80 29

60 I C = 36A 26

40 23

20 20
25 50 75 100 125 150
TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXXH50N60B3D1
60 1000 30
A TVJ = 100°C TVJ= 100°C
nC A
VR = 300V VR = 300V
50 25
800
Qr IRM IF= 60A
IF IF= 30A
40 20 IF= 15A
IF= 60A
TVJ =150°C 600
IF= 30A
30 IF= 15A 15
TVJ =100°C
400
20 10
TVJ = 25°C
200
10 5

0 0 0
0 1 2 3 V 100 A/μs 1000 0 200 400 600 A/μs800 1000
VF -diF/dt -diF/dt

Fig. 22. Forward Current IF Versus VF Fig. 23. Reverse Recovery Charge Qr Fig. 24. Peak Reverse Current IRM
Versus -diF/dt Versus -diF/dt

2.0 90 20 1.00
TVJ = 100°C
TVJ = 100°C
VR = 300V V μs
ns IF = 30A
V FR tfr
1.5 trr 15 0.75
Kf IF = 60A tfr
80
IF = 30A
IF = 15A VFR
1.0 10 0.50
IRM
70
Qr
0.5 5 0.25

0.0 60 0 0.00
0 40 80 120 °C 160 0 200 400 600 800
A/μs 1000 0 200 400 600 A/μs800 1000
T VJ -diF/dt diF/dt
Fig. 25. Dynamic Parameters Qr, IRM Fig. 26. Recovery Time trr Versus Fig. 27. Peak Forward Voltage VFR
Versus TVJ -diF/dt and tfr Versus diF/dt

1
K/W
Constants for ZthJC calculation:

i Rthi (K/W) ti (s)

0.1
1 0.502 0.0052
Z thJC
2 0.193 0.0003
3 0.205 0.0162

0.01

DSEP 29-06
0.001
0.00001 0.0001 0.001 0.01 0.1 s 1
t
Fig. 28. Transient Thermal Resistance Junction to Case

© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_50N60B3D1(5D)02-23-11