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Thermal Resistance
Junction - ambient2) Rth JA ≤ 600 K/W
Junction - soldering point Rth JS ≤ 460
DC characteristics
Breakdown voltage V(BR) 70 – – V
I(BR) = 100 µA
Forward voltage VF mV
IF = 1 mA – – 715
IF = 10 mA – – 855
IF = 50 mA – – 1000
IF = 150 mA – – 1250
Reverse current IR µA
VR = 70 V – – 2.5
VR = 25 V, TA = 150 ˚C – – 30
VR = 70 V, TA = 150 ˚C – – 50
AC characteristics
Diode capacitance CD – – 1.5 pF
VR = 0 V, f = 1 MHz
Reverse recovery time trr – – 6 ns
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
Semiconductor Group 2
BAV 70
Semiconductor Group 3
BAV 70
Semiconductor Group 4