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Silicon Schottky Diode
1
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detection and mixing
VPS05176
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR 70 V
Forward current IF 70 mA
Surge forward current, t 10 ms IFSM 100
Total power dissipation Ptot 250 mW
TS = 97 °C
Junction temperature Tj 150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tstg -55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 190 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-06-2001
BAS170W
AC Characteristics
Diode capacitance- CT - 1.5 2 pF
VR = 0 V, f = 1 MHz
Differential forward resistance RF - 34 -
IF = 5 mA, f = 10 kHz
Charge carrier life time rr - - 100 ps
IF = 25 mA
Series inductance LS - 1.8 - nH
2 Aug-06-2001
BAS170W
CT pF
rf Ω
1.5
10 2
1.0
10 1
0.5
0.0 10 0
0 20 40 60 V 80 0.1 1 10 mA 100
VR ΙF
10 1 80
70
IF
85 C
10 0 60
50
10 -1 40
30
25 C
10 -2 20
10
10 -3 0
0 20 40 60 V 80 0 20 40 60 80 100 120 °C 150
VR TS
3 Aug-06-2001
BAS170W
mA
ΙF
IFmax/IFDC
10 1
D=0
0.005
0.01
- 0.02
10 0 0.05
TA = -40 C 0.1
0.2
25 C
0.5
85 C
150 C
10 -1
10 -2 10 2 -6 -5 -4 -3 -2 0
0.0 0.5 1.0 V 1.5 10 10 10 10 10 s 10
VF tP
10 3
K/W
10 2
RthJS
0.5
0.2
10 1 0.1
0.05
0.02
0.01
0.005
D=0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10
tP
4 Aug-06-2001