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FEATURES
* High current transfer ratio May.2009
( CTR : MIN. 600% at IF = 1mA, VCE = 2V )
* Isolation voltage between input and output LTV-355T
( Viso = 3,750Vrms )
* Employs double transfer mold technology
* Subminiature type
( The volume is smaller than that of conventional DIP type by as far as 30% )
* Mini-flat package :
2.0mm profile : LTV-355T
* Safety approval
UL, CSA, FIMKO NEMKO, DEMKO, SEMKO, VDE* approved
(*Requires “V” ordering option)
* RoHS compliance
APPLICATIONS
* Hybrid substrates that require high density mounting.
* Programmable controllers
OUTLINE DIMENSIONS
LTV-355T :
TAPING DIMENSIONS
( Ta = 25°C )
PARAMETER SYMBOL RATING UNIT
Forward Current IF 50 mA
Power Dissipation P 70 mW
( Ta = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Emitter IC=0.1mA
BVCEO 35 — — V
OUTPUT Breakdown Voltage IF=0
Emitter-Collector IE=10µA
BVECO 6 — — V
Breakdown Voltage IF=0
Collector Current IC 6 — 75 mA
IF=1mA
VCE=2V
* Current Transfer Ratio CTR 600 — 7,500 %
Collector-Emitter IF=20mA
VCE(sat) — 0.8 1 V
Saturation Voltage IC=5mA
DC500V
Isolation Resistance Riso 5×1010 1×1011 — Ω
TRANSFER 40 ~ 60% R.H.
CHARACTERISTICS
Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz
VCE=5V, IC=2mA
Cut-Off Frequency fc 1 6 — kHz
RL=100Ω, -3dB
IC
* CTR = × 100%
IF
CHARACTERISTICS CURVES
150
40
30 100
20
50
10
0 0
-55 0 25 50 75 100 125 -55 0 25 50 75 100 125
o o
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
o 500
Ta= 25 C
30mA
o
5mA
Ta= 75 C
7mA
7 o
200 o
50 C 25 C
Forward current IF (mA)
o
6 0C
100 o
-25 C
1mA
3mA
5 50
4
20
Ic= 0.5mA
3 10
VCE(sat)
2 5
1 2
0 1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0
Forward current IF (mA) Forward voltage VF (V)
Fig.5 Current Transfer Ratio vs. Forward Fig.6 Collector Current vs.
Current Collector-emitter Voltage
5000 100
VCE= 2V IF= 10mA o
o Ta= 25 C
Current transfer ratio CTR (%)
Ta= 25 C
4000
Collector current IC (mA)
80
5mA
Pc(MAX.)
3000 60
2mA
2000 40 1mA
1000 20
0 0
0.1 0.2 0.5 1 2 5 10 0 1 2 3 4 5
Forward current IF (mA) Collector-emitter voltage VCE (V)
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature vs. Ambient Temperature
150 1.2
IC= 1mA
1.0
100 0.8
0.6
0.4
VCE(sat) (V)
50
0.2
0
20 40 60 80 100 120
0 o
20 40 60 80 100 120 Ambient temperature Ta ( C)
o
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs. Fig.10 Response Time vs. Load
Ambient Temperature Resistance
100000 500
VCE= 20V VCE= 2V tr
IC= 10mA
Collecotr dark current ICEO(nA)
200 o
Ta= 25 C tf
10000 100
Response time ( s)
50
1000 20
td
10
100 5 ts
2
10 1
0.5
1 0.2
20 40 60 80 100 120 0.05 0.1 0.2 0.5 1 2 5 10
o
Ambient temperature Ta ( C) Load resistance RL(k )
Vcc Input
VCE= 2V Output
IC= 2mA RL 10%
o Input RD Output
0 Ta= 25 C
Voltage gain Av (dB)
90%
td ts
tr tf
RD RL
Output
-20
0.02 0.1 1 10 100
Frequency f (kHz)
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)
Notes:
- The products shown in this publication are designed for the general use in electronic
- When requiring a device for any ”specific” application, please contact our sales in
advice.
- If there are any questions about the contents of this publication, please contact us at
your convenience.
- The contents described herein are subject to change without prior notice.