UNISONIC TECHNOLOGIES CO.

,LTD
2SC3320 NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE HIGH SPEED

SWITCHING

FEATURES
* High voltage, high speed switching
* High reliability
1

TO-3P

*Pb-free plating product number:2SC3320L

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
2SC3320-T3P-F-T 2SC3320L-T3P-F-T B C E TO-3P Tube

2SC3320L-T3P-F-T
(1)Packing Type (1) T: Tube
(2)Pin Assignment (2) refer to Pin Assignment
(3)Package Type (3) T3P: TO-3P
(4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn

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2SC3320 NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (TC = 25℃)

PARAMETER SYMBOL RATINGS UNIT
Collector Base Voltage VCBO 500 V
VCEO 400 V
Collector Emitter Voltage
VCEO(SUS) 400 V
Emitter Base Voltage VEBO 7 V
Collector Current IC 15 A
Base Current IB 5 A
Power Dissipation PD 80 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from -20℃~+85℃.

ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Voltage VCBO ICBO=1mA 500 V
VCEO ICEO=10mA 400 V
Collector Emitter Voltage
VCEO(SUS) IC=0.2A 400 V
Emitter Base Voltage VEBO IEBO=1mA 7 V
Collector Emitter Saturation Voltage VCE (SAT) 1 V
IC=6A, IB=1.2A
Base Emitter Saturation Voltage VBE (SAT) 1.5 V
Collector Cut-off Current ICBO VCBO=500V 1 mA
Emitter Cut-off Current IEBO VEBO=7V 1 mA
DC Current Gain hFE IC=6A, VCE=5V 10
tON 0.5 µs
IC=7.5A, IB1 =1.5A, IB2=-3A
Switching Time tSTG 1.5 µs
RL=20Ω, Pw=20µs, Duty ≤ 2%
tF 0.15 µs

THERMAL CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance Junction to Case θJC 1.55 ℃/W

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2SC3320 NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING TIME TEST CIRCUIT

RL=20Ω
IB1

IB1 IB2
IC
IB2

0.9IC
IC

PW =20μs 0.1IC

tON t STG tF

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2SC3320 NPN EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Collector Output Characteristics DC Current Gain

5 300
IC=1A 2A 3A 5A 10A TC=25℃ VCE=5V
Collector Emitter Voltage, VCE (V)

3
100

DC Current Gain, hFE

1 50
30
0.5
0.3
10 TC=150℃ 75℃ 25℃ -50℃

5
0.1
3
0.05
0.03 1
0.03 0.05 0.1 0.3 0.5 1 3 5 0.05 0.1 0.3 0.5 1 3 5 10 15
Collector Current, I C (A)
Base Current, I B (A)

Base and Collector Saturation Voltage Safe Operating Area

4 30
3 TC=25℃IC=5IB 10
Saturation Voltage, VCE (SAT), VBE (SAT) (V)

μ
s

10
10

0μ
1 VBE(SAT) 5

s
Collector Current, I C (A)

3 PW =1ms
0.5
0.3
VCE(SAT) 1 DC

0.1 0.5
0.3
0.05
0.03 0.1
T C=25℃
0.05 Single Pulse
0.01 0.03
0.05 0.1 0.3 0.5 1 3 5 10 20 1 3 5 10 30 50 100 300 5001000
Collector Current, I C (A) Collector Emitter voltage, VCE (V)

Switching Time

1.5
1
t STG
Switching Time (µs)

0.5

0.3
t ON

0.1
TC=25℃
tF
0.05 VCC=150V
IC=5I B1 =-2.5IB2
0.03
0.5 1 3 5 10 25

Collector Current, I C (A)

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2SC3320 NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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