BCR116...

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ)
• BCR116S: Two internally isolated
transistors with good matching
in one multichip package
• BCR116S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

BCR116 BCR116S
BCR116W
C C1 B2 E2
3 6 5 4

R2
R1
R1 TR2
TR1 R1
R2
R2

1 2 1 2 3

B E E1 B1 C2
EHA07184 EHA07174

Type Marking Pin Configuration Package

BCR116 WGs 1=B 2=E 3=C - - - SOT23
BCR116S WGs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR116W WGs 1=B 2=E 3=C - - - SOT323

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 BCR116...

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 30
Input reverse voltage Vi(rev) 5
Collector current IC 100 mA
Total power dissipation- Ptot mW
BCR116, TS ≤ 102°C 200
BCR116S, TS ≤ 115°C 250
BCR116W, TS ≤ 124°C 250
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W
BCR116 ≤ 240
BCR116S ≤ 140
BCR116W ≤ 105
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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 BCR116...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 50 - - V
IC = 100 µA, IB = 0
Collector-base breakdown voltage V(BR)CBO 50 - -
IC = 10 µA, IE = 0
Collector-base cutoff current ICBO - - 100 nA
VCB = 40 V, IE = 0
Emitter-base cutoff current IEBO - - 155 µA
VEB = 5 V, IC = 0
DC current gain1) hFE 70 - - -
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1) VCEsat - - 0.3 V
IC = 10 mA, IB = 0.5 mA
Input off voltage Vi(off) 0.4 - 0.8
IC = 100 µA, VCE = 5 V
Input on voltage Vi(on) 0.5 - 1.4
IC = 2 mA, VCE = 0.3 V
Input resistor R1 3.2 4.7 6.2 kΩ
Resistor ratio R1/R2 0.09 0.1 0.11 -
AC Characteristics
Transition frequency fT - 150 - MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance Ccb - 3 - pF
VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%

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 BCR116...

DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage

VCE = 5V (common emitter configuration) VCEsat = ƒ(IC ), IC/IB = 20

10 3 0.5

0.4

0.35
10 2

Vcesat
hFE

0.3

-40 °C
0.25
-25 °C
-40 °C
25 °C
-25 °C 0.2 85 °C
25 °C
10 1 125 °C
85 °C
0.15
125 °C

0.1

0.05

10 0 -4 -3 -2 -1 0 -3 -2 -1
10 10 10 A 10 10 10 A 10
IC IC

Input on Voltage Vi (on) = ƒ(IC) Input off voltage Vi(off) = ƒ(IC)

VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 1 10 1

-40 °C -40 °C
V -25 °C V -25 °C
25 °C 25 °C
85 °C 85 °C
Vi(on)

Vi(off)

125 °C 125 °C

10 0 10 0

10 -1 -5 -4 -3 -2 -1
10 -1 -5 -4 -3 -2 -1
10 10 10 10 A 10 10 10 10 10 A 10
IC IC

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 BCR116...

Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS)
BCR116 BCR116S

300 300
mW mW

250 250

225 225

200 200
Ptot

Ptot
175 175

150 150

125 125

100 100

75 75

50 50

25 25

0 0
0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 °C 150
TS TS

Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp)
BCR116W BCR116

300 10 3
mW
K/W

250

225 10 2
RthJS

200
Ptot

175

150 10 1
0.5
125 0.2
0.1
100 0.05
0.02
75 10 0
0.01
0.005
50 D=0
25

0 10 -1 -6 -5 -4 -3 -2 0
0 15 30 45 60 75 90 105 120 °C 150 10 10 10 10 10 s 10
TS tp

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 BCR116...

Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p)

Ptotmax/PtotDC = ƒ(tp ) BCR116S
BCR116
10 3 10 3

K/W
-
Ptotmax / PtotDC

10 2
D=0

RthJS
10 2 0.005
0.01
0.02
0.05 10 1
0.1 0.5
0.2 0.2
0.5 0.1
10 1 0.05
0.02
10 0
0.01
0.005
D=0

10 0 -6 -5 -4 -3 -2 0
10 -1 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

Permissible Pulse Load Permissible Puls Load RthJS = ƒ (t p)

Ptotmax/PtotDC = ƒ(tp ) BCR116W
BCR116S
10 3 10 3

K/W
-
Ptotmax / PtotDC

10 2
D=0
RthJS

10 2 0.005
0.01
0.02
0.05 10 1
0.1 0.5
0.2 0.2
0.5 0.1
10 1 0.05
0.02
10 0
0.01
0.005
D=0

10 0 -6 -5 -4 -3 -2 0
10 -1 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

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 BCR116...

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp )
BCR116W
10 3

-
Ptotmax / PtotDC

D=0
10 2 0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1

10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10
tp

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 Package SOT23 BCR116...

Package Outline

0.15 MIN.
1 ±0.1
2.9 ±0.1 0.1 MAX.
B
3

2.4 ±0.15

1.3 ±0.1
10˚ MAX.

10˚ MAX.
1 2
1)
0.4 +0.1
-0.05 0.08...0.1 A
C 5
0.95
0...8˚
1.9

0.25 M B C 0.2 M A

1) Lead width can be 0.6 max. in dambar area

Foot Print

0.8
0.9
1.3
0.9

0.8 1.2

Marking Layout (Example)

Manufacturer

EH s 2005, June
Date code (YM)

Pin 1 BCW66
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4
0.9 0.2
2.13
2.65
8

Pin 1 3.15 1.15

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 Package SOT323 BCR116...

Package Outline
2 ±0.2 0.9 ±0.1
0.1 MAX.
0.3 +0.1
-0.05
3x
0.1 M 0.1
A
3

1.25 ±0.1
2.1 ±0.1

0.1 MIN.
1 2
0.65 0.65 0.15 +0.1
-0.05

0.2 M A

Foot Print

0.6
1.6
0.8

0.65
0.65

Marking Layout (Example)

Manufacturer

2005, June
Date code (YM)

Pin 1 BCR108W
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4 0.2
8
2.3

Pin 1 2.15 1.1

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 Package SOT363 BCR116...

Package Outline
2 ±0.2 0.9 ±0.1
+0.1 6x
0.2 -0.05 0.1 MAX.
0.1 M
0.1
A
6 5 4

1.25 ±0.1
2.1 ±0.1

0.1 MIN.
1 2 3
Pin 1
marking 0.65 0.65 0.15 +0.1
-0.05

0.2 M A

Foot Print

0.3
0.9 0.7

1.6

0.65
0.65

Marking Layout (Example)

Small variations in positioning of
Date code, Type code and Manufacture are possible.

Manufacturer

2005, June
Date code (Year/Month)

Pin 1 marking BCR108S

Laser marking Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4 0.2
8
2.3

Pin 1 2.15 1.1

marking

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 BCR116...

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

 2009 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

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