BYP 303

FRED Diode

• Fast recovery epitaxial diode

• Soft recovery characteristics

Type VRRM IFRMS trr Package Ordering Code

BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2

Maximum Ratings
Parameter Symbol Values Unit
Mean forward current IFAV A
TC = 90 °C, D = 0.5 40
RMS forward current IFRMS 65
Surge forward current, sine halfwave, aperiodic IFSM
Tj = 100 °C, f = 50 Hz 170
Repetitive peak forward current IFRM
Tj = 100 °C, tp ≤ 10 µs 370
i 2t value ∫i2dt A2s
Tj = 100 °C, tp = 10 ms 145
Repetitive peak reverse voltage VRRM 1200 V
Surge peak reverse voltage VRSM 1200
Power dissipation Ptot W
TC = 90 °C 120
Chip or operating temperature Tj -40 ... + 150 °C
Storage temperature Tstg -40 ... + 150

Thermal resistance, chip case RthJC ≤ 0.5 K/W

Thermal resistance, chip-ambient RthJA ≤ 46
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56

Semiconductor Group 1 12.96

 BYP 303

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Forward voltage drop VF V
IF = 25 A, Tj = 25 °C - 2 -
IF = 40 A, Tj = 25 °C - 2.2 2.8
IF = 25 A, Tj = 100 °C - 1.6 -
IF = 40 A, Tj = 100 °C - 1.8 -
Reverse current IR mA
VR = 1200 V, Tj = 25 °C - 0.01 0.25
VR = 1200 V, Tj = 100 °C - 0.05 -
VR = 1200 V, Tj = 150 °C - 0.15 -

AC Characteristics
Reverse recovery charge Qrr µC
IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C - 6 -
Peak reverse recovery current IRRM A
IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C - 60 -
Reverse recovery time trr ns
IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C - 140 -
Storage time tS
IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C - 70 -
Softfaktor S -
IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C - 1 -

Semiconductor Group 2 12.96

 BYP 303

Typ. forward characteristics Typ. reverse current

IF = f (VF) IRRM = f (diF / dt)
parameter: Tj parameter: VCC = 500 V,IF = 40 A, Tj = 100 °C

10 3
80

A
A

IF IRRM
10 2
60

Tj=100°C 25°C 50

10 1
40

30

10 0
20

10

10 -1 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 1 2 3
VF 10 10 10 A/us
diF/dt

Typ. reverse recovery charge

Qrr = f (diF / dt)
parameter: VCC = 500 V,IF = 40 A, Tj = 100 °C

7.0

uC

6.0
Qrr 5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5
0.0
1 2 3
10 10 10 A/us
diF/dt

Semiconductor Group 3 12.96