SEMICONDUCTOR BTA24-600B

TECHNICAL DATA

Bi-Directional Triode Thyristor

• High current density due to double mesa technology,
SIPOS and Glass passivation .
TO-220AB
BTA24 series triacs is suitable for general purpose
AC switching. They can be used as an ON/OFF
function is applications such as static relays,
heating regulation,
induction motor stating circuits or phase control
operation light dimmers, motorspeed controllers.
• BTA24 series are 3 Quadrants triacs,
They are specially recommended for use on
1 2 3
inductive loads.

Features
• Blocking Voltage to 600~800 V
• On-State Current Rating of 20A RMS at 90℃
• Uniform Gate Trigger Currents in Three Quadrants Symbol
○ 2.T2
• High Immunity to dV/dt-1500V/us minimum at 125℃
• Minimizes Snubber Networks for Protection
▼▲
• Industry Standard TO-220AB Package ○ 3.Gate
• High Commutating dI/dt- 4.0A/ms minimum at 125℃ 1.T1 ○
• Internally Isolated (2500VRMS)
• These are Pb-Free Devices

Absolute Maximum Ratings

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40 to +150 ℃
Operating junction temperature range Tj -40 to + 125 ℃
Repetitive Peak OFF-state Voltage Tj=25℃ VDRM 600 and 800 V
Repetitive Peak Reverse Voltage Tj=25℃ VRRM 600 and 800 V
Non repetitive surge peak off-state voltage VDSM 700 and 900 V
Tp=10ms,Tj=25℃
Non repetitive peak reverse voltage VRSM 700 and 900 V
TC=90℃
RMS on-state current(full sine wave) IT(RMS) 24 A
TC=70℃
Non repetitive surge peak on-state current f=60Hz,t=16.7ms 250
ITSM
(full cycle,TJ=25℃) f=50Hz,t=20ms 260 A
2 2
I t Value for fusing Tp=10ms It 340 A2 s
Critical rate of rise of on-state
dI/dt 50 A/us
current IG=2*IGT,tr≤100ns,f=120Hz,Tj=125℃
Peak gate current(tp=20us,Tj=125℃) IGM 4 A
Peak gate power dissipation(tp=20us,Tj=125℃) PGM 10 W
Average gate power dissipation(Tj=125℃) PG(AV) 1 W

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 BTA24-600B

Electrical Characteristics (Tj=25℃,unless other wise specified)

Limit
Symbol Test Condition Quadrant Unit
CW(C) BW(B)
IGT Ⅰ-Ⅱ-Ⅲ - Ⅳ MAX 35 50 mA
VD=12V,RL=33Ω
VGT Ⅰ-Ⅱ-Ⅲ - Ⅳ MAX 1.3 V
VGD VD=VDRM RL=3.3KΩ Tj=125℃ Ⅰ-Ⅱ-Ⅲ - Ⅳ MIN 0.2 V

Ⅰ-Ⅲ - Ⅳ MAX 50 70 mA
IL IG=1.2IGT
Ⅱ MAX 60 80 mA
IH IT=100mA MAX 40 60 mA
Dv/dt VD=67%VDRM gate open TJ=125℃ MIN 500 1000 V/us
(Dv/dt)c (dl/dt)c=8.8A/ms Tj=125℃ MIN 8.5 14 V/us

Static Characteristics
Symbol Parameter Value(MAX) Unit
VTM ITM=35A,tp=380us Tj=25℃ 1.55 V
IDRM Tj=25℃ 5 uA
VD=VDRM VR=VRRM
IRRM Tj=125℃ 3 mA

Thermal Resistances

Symbol Parameter Value Unit

Rth(J-C) Junction to case(AC) 1.7 ℃/W

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 BTA24-600B

Voltage Current Characteristic of Triacs (Bidirectional Device)

+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter V TM
V DRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
V RRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
V TM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
V TM
MainTerminal 2 −

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Qu adr an t II (−) IGT (+) I GT Qu adr an t I

GATE GATE

MT1 MT1

REF REF

IGT − + IGT

(−) MT2 (−) MT2

Qu adr an t III (−) IGT (+) I GT Qu adr an t IV

GATE GATE

MT1 MT1

REF REF

−
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

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 BTA24-600B

Figure 1. Maximum power dissipation versus Figure 2. RMS on-state current versus case
RMS on-state current (full cycle) temperature (full cycle)

P(W) IT(RMS) (A)

30 30

25 25 BTB / T25

BTA24
20 20
BTA25 / BTA26
15 15

10 10

5 5
IT(RMS) (A) TC(°C)
0 0
0 5 10 15 20 25 0 25 50 75 100 125

Figure 3. D2PAK RMS on-state current versus Figure 4. Relative variation of thermal
ambient temperature (printed impedance versus pulse
circuit board FR4, copper duration
thickness: 35µm) (full cycle)

IT(RMS) (A) K=[Zth /Rth ]

4.0 1E+0
D2PAK Zth(j-c)
35 (S=1cm2 )

3.0
Zth(j-a)
1E-1
25 BTA / BTB24 / T25

2.0

15
1E-2 Zth(j-a)
BTA26
1.0

05
Tamb(°C) tp(s)
0.0 1E-3
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Figure 5. On-state characteristics Figure 6. Surge peak on-state current

(maximum values) versus number of cycles

ITM (A) ITSM (A)

300 300
Tj max.
V to = 0.85V Tj = Tj max.
100 R d = 16 mΩ 250
t=20ms

200 One cycle

Non repetitive
Tj initial=25°C
150
10 Tj = 25°C. Repetitive
TC=75°C
100

50

V TM(V) Number of cycles

1 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 10 100 1000

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 BTA24-600B

Figure 7. Non-repetitive surge peak on-state Figure 8. Relative variation of gate trigger
current for a sinusoidal pulse with current, holding current and
width t p < 10 ms and corresponding latching current versus junction
value of I2t temperature (typical values)

2
ITSM (A), I t (A s)
2 I GT,I H,IL [Tj ]/I GT,I H,IL [Tj =25°C]
2.5
3000
Tj initial=25°C
dI/dt limitation:
50A/µs
2.0

IGT
1000
ITSM 1.5

I2 t
IH & IL
1.0

0.5

tp(ms) Tj(°C)
100 0.0
0.01 0.10 1.00 10.00 -40 -20 0 20 40 60 80 100 120 140

Figure 9. Relative variation of critical rate of Figure 10. Relative variation of critical rate of
decrease of main current versus decrease of main current versus
(dV/dt)c (typical values) (dV/dt)c

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [Tj ]/ (dI/dt)c [Tj specified]

2.4 6

2.2
5
2.0
1.8
4
1.6
T2535/CW/BW
1.4 B 3
1.2
2
1.0
0.8
1
0.6
(dV/dt)c (V/µs) Tj(°C)
0.4 0
0.1 1.0 10.0 100.0 0 25 50 75 100 125

Figure 11. D2PAK Thermal resistance junction to

ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35 µm)

R th(j-a)℃/W)
80

70 D2PAK

60

50

40

30

20

10
S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40

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