Silicon PIN Diodes BXY 42BA-S

BXY 42BB-S

● Beam lead version

● Fast switching

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Pin Configuration Package1)
BXY 42BA-S – Q62702-X151 Pointed cathode S
BXY 42BB-S Q62702-X159

Maximum Ratings
Parameter Symbol Values Unit
BXY 42BA-S BXY 42BB-S
Reverse voltage VR 50 30 V
Junction temperature Tj 175 ˚C
Storage temperature range Tstg – 55 … + 150
Operating temperature range Top – 55 … + 150

1) For detailed information see chapter Package Outlines.

 BXY 42BA-S

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Breakdown voltage V(BR) 50 – – V
IR = 10 µA
Forward voltage VF – 1.0 –
IF = 50 mA
Reverse current IR – – 5 nA
VR = 40 V
Storage time ts – 3 – ns
IF = 10 mA, VR = 10 V
Diode capacitance CT – – 0.08 pF
VR = 30 V, f = 1 MHz
Charge carrier life time τL – 30 – ns
IF = 10 mA, IR = 6 mA
Forward resistance rf – 1.8 – Ω
f = 100 MHz, IF = 10 mA
 BXY 42BA-S

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Breakdown voltage V(BR) 30 – – V
IR = 10 µA
Forward voltage VF – 1.1 –
IF = 50 mA
Reverse current IR – – 5 nA
VR = 20 V
Storage time ts – 2 – ns
IF = 10 mA, VR = 10 V
Diode capacitance CT – – 0.15 pF
VR = 20 V, f = 1 MHz
Charge carrier life time τL – 20 – ns
IF = 10 mA, IR = 6 mA
Forward resistance rf – 1.3 – Ω
f = 100 MHz, IF = 10 mA