2SK3868

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)

2SK3868
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.)

• High forward transfer admittance: |Yfs| = 3S (typ.)
• Low leakage current: IDSS = 100 μA (V DS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage V DSS 500 V

Drain-gate voltage (RGS = 20 kΩ) V DGR 500 V
Gate-source voltage V GSS ±30 V
DC (Note 1) ID 5
Drain current Pulse (t = 1 ms) A
IDP 20
(Note 1)
1: Gate
Drain power dissipation (Tc = 25°C) PD 35 W 2: Drain
3: Source
Single pulse avalanche energy
EA S 180 mJ
(Note 2)
Avalanche current IAR 5 A
JEDEC ?
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
JEITA SC-67
Channel temperature Tch 150 °C
TOSHIBA 2-10U1B
Storage temperature range Tstg -55~150 °C
Weight : 1.7 g (typ.)

Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, R G = 25 Ω 1

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V GS = ±25 V, V DS = 0 V   ±10 µA

Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, V DS = 0 V ±30   V

Drain cut-off current IDSS V DS = 500 V, V GS = 0 V   100 µA
Drain-source breakdow n voltage V (BR) DSS ID = 10 mA, V GS = 0 V 500   V
Gate threshold voltage V th V DS = 10 V, ID = 1 mA 2.0  4.0 V
Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 2.5 A  1.3 1.7 Ω
Forward transfer admittance Yf s  V DS = 10 V, ID = 2.5 A 1.5 3.0  S
Input capacitance Ciss  550 
Reverse transfer capacitance Crss V DS = 25 V, V GS = 0 V, f = 1 MHz  7  pF

Output capacitance Coss  70 

Rise time tr 10 V ID = 2.5 A V OUT  10 

V GS
0V
Turn-on time ton RL =  20 
15 Ω 90 Ω
Switching time ns
Fall time tf  10 
V DD ∼
− 225 V
Turn-off time toff Duty <
= 1%, tw = 10 µs  50 

Total gate charge Qg  16 

Gate-source charge Qgs − 400 V, V GS = 10 V, ID = 5 A
V DD ∼  10  nC

Gate-drain charge Qgd  6 

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current IDR    5 A

(Note 1)
Pulse drain reverse current (Note 1) IDRP    20 A
Forward voltage (diode) V DSF IDR = 5 A, V GS = 0 V   −1.7 V
Reverse recovery time trr IDR = 5 A, V GS = 0 V,  150  ns
Reverse recovery charge Qrr dIDR /dt = 100 A/µs  0.3  µC

Marking

K3868 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID – V DS ID – V DS
5 10
COMMON SOURCE 10 COMMON SOURCE 10
5.5
Tc = 25°C Tc = 25°C
PULSE TEST
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

PULSE TEST
4 8 6
6 5.25

3 6
5
5.5

2 4 5.25
4.75

5
4.5
1 2 4.75
VGS = 4 V 4.5
VGS = 4 V
0 0
0 2 4 6 8 10 12 0 4 8 12 16 20 24

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – V GS V DS – V GS
10 20
DRAIN-SOURCE VOLTAGE VDS (V)

COMMON SOURCE
COMMON SOURCE
Tc = 25℃
VDS = 20 V
DRAIN CURRENT ID (A)

8 16 PULSE TEST
PULSE TEST
25

6 12

Tc = −55°C

4 8 ID = 5 A
100

2 4 2.5

1.2

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yf s  – ID RDS (ON) – ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 20 V Tc = 25°C
PULSE TEST PULSE TEST
Tc = −55°C
100
RDS (ON) (mΩ)

VGS = 10 V､ 15V
Yfs  (S)

25
1 1

0.1 0.1
0.1 1 10 0.01 0.1 1 10

DRAIN CURRENT DI (A) DRAIN CURRENT DI (A)

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RDS (ON) – Tc IDR – V DS

5 10
COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

COMMON SOURCE

DRAIN REVERSE CURRENT ID R

VGS = 10 V Tc = 25°C
5
4 PULSE TEST PULSE TEST
3
RDS (ON) (m Ω)

3
ID = 5A

(A)
1
2.5
2
0.5
10
1.2
0.3 3
1
VGS = 0, −1,1 V

0 0.1
0 40 80 120 160 0 −0.4 −0.8 −1.2 −1.6 −2.0

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – V DS V th – Tc
10000 5
COMMON SOURCE
VDS = 10 V
GATE THRESHOLD VOLTAGE
CAPACITANCE C (pF)

4 ID = 1 mA
1000 Ciss
PULSE TEST

3
Vth (V)

100
Coss
2

10 COMMON SOURCE
Crss
VGS = 0 V 1
f = 1 MHz
Tc = 25°C
1 0
0.1 1 3 5 10 30 50 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
50 500 20
DRAIN-SOURCE VOLTAGE VDS (V)

GATE-SOURCE VOLTAGE VGS (V)

DRAIN POWER DISSIPATION

VDS
40 400 16

30 300 VDD = 100 V 400 12

PD (W)

200
20 200 8

COMMON SOURCE

10 100 VGS ID = 5 A 4
Tc = 25°C

PULSE TEST
0 0 0
0 40 80 120 160 200 0 5 10 15 20 25

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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r th – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2

0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EA S – Tch

100 200

ID max ( PULSED) *
160
AVALANCHE ENERGY

100 µs *
10
DRAIN CURRENT ID (A)

ID max ( CONTINUOUS) *
EAS (mJ)

120
1 ms *

DC OPERATION 80
1 Tc = 25°C

40
※ SINGLE NONREPETITIVE

0.1 PULSE

Tc=25℃ 0
25 50 75 100 125 150
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN CHANNEL TEMPERATURE (INITIAL)
TEMPERATURE. VDSS max Tch (°C)
0.01
1 10 100 1000

DRAIN-SOURCE VOLTAGE VDS (V) BVDSS

15 V
IAR
−15 V
V DD V DS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1  BVDSS 
? AS = ⋅ L ⋅ I2 ⋅  
B 
V DD = 90 V, L = 12.2mH 2  VDSS − VDD 

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RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, indus trial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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