2SK3462

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3462
Switching Regulator, DC-DC Converter and
Motor Drive Applications Unit: mm

· 4 V Gate drive
· Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
· High forward transfer admittance: |Yfs| = 2.2 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 250 V)
· Enhancement-mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 250 V

Drain-gate voltage (RGS = 20 kW) VDGR 250 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 3
Drain current Pulse (t = 1 ms) A
IDP 6
(Note 1)
Drain power dissipation (Tc = 25°C) PD 20 W JEDEC ―
Single pulse avalanche energy JEITA SC-64
EAS 36.2 mJ
(Note 2)
TOSHIBA 2-7B1B
Avalanche current IAR 3 A
Repetitive avalanche energy (Note 3) EAR 2 mJ Weight: 0.36 g (typ.)

Channel temperature Tch 150 °C

Storage temperature range Tstg -55~150 °C

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W

Note 1: Please use devices on conditions that the channel temperature

is below 150°C.

Note 2: VDD = 50 V, Tch = 25°C, L = 6.7 mH, IAR = 3 A, RG = 25 W

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic sensitive device. Please handle with

caution.

JEDEC ―
JEITA SC-64
TOSHIBA 2-7J1B

Weight: 0.36 g (typ.)

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 2SK3462
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA

Drain cut-off current IDSS VDS = 250 V, VGS = 0 V ¾ ¾ 100 mA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 250 ¾ ¾ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ¾ 3.5 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A ¾ 1.2 1.7 W
Forward transfer admittance ïYfsï VDS = 10 V, ID = 1.5 A 0.5 2.2 ¾ S
Input capacitance Ciss ¾ 267 ¾
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 32 ¾ pF

Output capacitance Coss ¾ 98 ¾

Rise time tr 10 V ID = 1.5 A VOUT ¾ 5 ¾

VGS
0V
Turn-on time ton ¾ 20 ¾
RL = 67 W
Switching time 4.7 W ns
Fall time tf ¾ 5 ¾
VDD ~
- 100 V
Turn-off time toff ¾ 30 ¾
Duty <
= 1%, tw = 10 ms
Total gate charge Qg ¾ 12 ¾
Gate-source charge Qgs VDD ~
- 200 V, VGS = 10 V, ID = 3 A ¾ 6 ¾ nC

Gate-drain charge Qgd ¾ 6 ¾

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current IDR ¾ ¾ ¾ 3 A

(Note 1)
Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ 6 A
Forward voltage (diode) VDSF IDR = 3 A, VGS = 0 V ¾ ¾ -2.0 V
Reverse recovery time trr IDR = 3 A, VGS = 0 V, ¾ 125 ¾ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/ms ¾ 470 ¾ nC

Marking

※ Lot Number
K3462 Type

※ Month (starting from alphabet A)

Year (last number of the christian era)

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 2SK3462

ID – VDS ID – VDS
3 6
Common source 6 Common source 15 6
8 4.6 5.5
Tc = 25°C 10 Tc = 25°C
Pulse test Pulse test 8
10

15 4.4
(A)

(A)
5
2 4
ID

ID
4.2
Drain current

Drain current
4.5
VGS = 4 V

1 2
VGS = 4 V

0 0
0 2 4 6 0 10 20 30

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

6 10
Common source Common source
VDS = 10 V Tc = 25°C
Pulse test
5 Pulse test
(V)

8
(A)

VDS

4
ID

6
Drain-source voltage
Drain current

3
3A
4
2
25

Tc = -55°C 2
1 ID = 1 A
100

0 0
0 1 2 3 4 5 6 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

ïYfsï – ID
10
Common source RDS (ON) - ID
VDS = 10 V 10
(S)

5 Pulse test Common source

Tc = 25°C
ïYfsï

Tc = -55°C 5 VGS = 10 V
3
25 Pulse test
3
Forward transfer admittance

100
Drain-source ON resistance

1
RDS (ON) (W)

0.5
0.5
0.3
0.3

0.1 0.1
0.1 0.3 0.5 1 3 5 10 0.01 0.03 0.1 0.3 1 3 10

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Tc IDR – VDS

5 100
(W)

Common source Common source

VGS = 10 V Tc = 25°C
Pulse test
RDS (ON)

Pulse test

(A)
4
ID = 3 A

Drain reverse current IDR

10
3
Drain-source on resistance

ID = 1 A

2
VGS = 10 V
1

1
5
3 0, -1
0 0.1
-80 -40 0 40 80 120 160 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Tc

10 5
Common source
VDS = 10 V
ID = 1 mA
Pulse test
4
Ciss
Gate threshold voltage Vth (V)
(pF)

100
3
Capacitance C

Coss

2
Crss
10
1

Common source 0
VGS = -80 -40 0 40 80 120 160
1
0.1 0.3 1 3 10 30 100 Case temperature Tc (°C)

Drain-source voltage VDS (V)

PD – Tc Dynamic input/output characteristics

40 250 25
Common source
ID = 3 A
Tc = 25°C
(W)

Pulse test
(V)

(V)

200 20
30
PD

VDS

VGS
Drain power dissipation

150 15
Drain-source voltage

Gate-source voltage

100
20
50 VDD = 200 V
100 10

10
50 5

0 0 0
0 40 80 120 160 200 0 5 10 15 20 25

Case temperature Tc (°C) Total gate charge Qg (nC)

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rth – tw
10
Normalized transient thermal impedance
5
3

1
rth (t)/Rth (ch-a)

Duty = 0.5
0.5
0.3 0.2

0.1 PDM
0.05 Single pulse
0.1 t
0.05 0.02
T
0.03 0.01
Duty = t/T
Rth (ch-c) = 6.25°C/W
0.01
10 m 100 m 1m 10 m 100 m 1 10

Pulse width tw (S)

Safe operating area EAS – Tch

100 100

50
(mJ)

30 80
Avalanche energy EAS

10 60
ID max (pulsed) *
5 100 ms *
(A)

ID max (continuous)
3 1 ms * 40
ID

DC
Drain current

1
20

0.5

0.3 0
25 50 75 100 125 150

0.1 Channel temperature (initial) Tch (°C)

* Single nonrepetitive pulse
0.05
Tc = 25°C
0.03 Curves must be derated linearly
BVDSS
with increase in temperature. 15 V
VDSS max
IAR
0.01 -15 V
1 3 5 10 30 50 100 300 500 1000
VDD VDS
Drain-source voltage VDS (V)

Test circuit Wave form

RG = 25 W 1 æ B VDSS ö
Ε AS = × L × I2 × ç ÷
VDD = 50 V, L = 6.7 mH 2 çB - ÷
è VDSS VDD ø

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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