TPC6108

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅣ)

TPC6108
Notebook PC Applications
Unit: mm
Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS −30 V

Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Source
Drain
Gate-source voltage VGSS ±20 V Drain Drain
DC (Note 1) ID −4.5 Gate Drain
Drain current A
Pulse (Note 1) IDP −18
Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 JEDEC ―
W
Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 JEITA ―
Single-pulse avalanche energy (Note 3) EAS 1.3 mJ TOSHIBA 2-3T1A
Avalanche current IAR −2.25 A
Weight: 0.011 g (typ.)
Repetitive avalanche energy
Single-device value at dual operation EAR 0.22 mJ
(Note 4)
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics Circuit Configuration

6 5 4
Characteristics Symbol Max Unit

Thermal resistance, channel to ambient (t = 5 s)

Rth (ch-a) 56.8 °C/W
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
Rth (ch-a) 178.5 °C/W
(Note 2b)

Note: For Notes 1 to 5, see page 3. 1 2 3

Caution: This transistor is an electrostatic-sensitive device. Handle with care.

1 2008-12-04
 TPC6108
Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯
Gate threshold voltage Vth VDS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 V
RDS (ON) VGS = −4.5 V, ID = −2.2 A ⎯ 75 100
Drain-source ON-resistance mΩ
RDS (ON) VGS = −10 V, ID = −2.2 A ⎯ 50 60
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.7 7.4 ⎯ S
Input capacitance Ciss ⎯ 570 ⎯
Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 75 ⎯ pF
Output capacitance Coss ⎯ 85 ⎯

Rise time tr ID = −2.2 A ⎯ 3.5 ⎯

0V
VGS VOUT
−10 V
⎯ ⎯

RL = 6.8 Ω
Turn-on time ton 12
Switching time ns
Fall time tf 4.7 Ω ⎯ 21 ⎯
VDD ≈ −15 V
Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 70 ⎯

Total gate charge

Qg ⎯ 13 ⎯
(gate-source plus gate-drain)
VDD ≈ −24 V, VGS ≈ −10 V,
nC
Gate-source charge1 Qgs1 ID = −4.5 A ⎯ 1.8 ⎯
Gate-drain (“Miller”) charge Qgd ⎯ 2.5 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −18 A

Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V ⎯ ⎯ 1.2 V

2 2008-12-04
 TPC6108
Marking (Note 5)

Lot code (month) Lot No. (weekly code)

Part No.
(or abbreviation code)
S3H
Product-specific code

Pin #1 Lot code A line indicates

(year) Lead (Pb)-Free package

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)

(b) Device mounted on a glass-epoxy board (b) (t = 5 s)

FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)

(a) (b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -2.25 A
Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5: ● to the lower left of the Part No. marking indicates Pin 1.

3 2008-12-04
 TPC6108

ID – VDS ID – VDS
−5 −10
−10 −4.5 −4 −3.5 Common source −10 −3.5 Common source
Ta = 25°C Ta = 25°C
−4 Pulse Test
Pulse Test
−4 −8
−4.5 −3
(A)

(A)
−3 −2.8
ID

ID
−3 −6 −2.8
−2.6
Drain current

Drain current
−2 −4 −2.6
−2.4

−2.4
−1 −2

VGS = −2.2V
VGS = −2.2V
0 0
0 −0.2 −0.4 −0.6 −0.8 −1.0 0 −1 −2 −3 −4 −5

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

−15 −1.0
Common source Common source
VDS = −10 V Ta = 25°C
(V)

Pulse Test Pulse Test

−0.8
ID (A)

VDS

Ta = −55°C 100
−10
−0.6
Drain-source voltage

25 ID = −4.5 A
Drain current

−0.4
−5
−2.2
−0.2
−1.1

0 0
0 −1 −2 −3 −4 −5 0 −2 −4 −6 −8 −10

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| – ID RDS (ON) – ID

100 1000
Common source
VDS = −10 V
Pulse Test
Drain-source ON resistance
Forward transfer admittance

Ta = −55°C
10
RDS (ON) (mΩ)
⎪Yfs⎪ (S)

100 VGS = −4.5 V

100
25
−10
1

Common source
Ta = 25°C
Pulse Test
0.1 10
−0. 1 −1 −10 −100 −0.1 −1 −10 −100

Drain current ID (A) Drain current ID (A)

4 2008-12-04
 TPC6108

RDS (ON) − Ta IDR − VDS

150 −100
Common source Common source
Pulse Test Ta = 25°C

Drain reverse current IDR (A)

Pulse Test
Drain-source ON-resistance

ID = −1.1/−2.2/−4.5 A −10
−5
RDS (ON) ( μΩ)

100 −10

VGS = −4.5 V
−3

50 −1
ID = −1.1/−2.2/−4.5 A

VGS = −10 V

−1 VGS = 0 V
0
−80 −40 0 40 80 120 160 −0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)

Capacitance – VDS Vth − Ta

10000
Common source −2.0
VGS = 0 V
f = 1 MHz
Ta = 25°C −1.6
(pF)

Gate threshold voltage

1000
Ciss
Capacitance C

−1.2
Vth (V)

−0.8
Coss
100
Common source
Crss −0.4 VGS = −10 V
ID = −1 mA
Pulse Test
10 0
−0.1 −1 −10 −100 −80 −40 0 40 80 120 160

Drain-source voltage VDS (V) Ambient temperature Ta (°C)

Dynamic input / output

PD − Ta characteristics

−40 −16
2.5
(1) Device mounted on a
(1) t = 5s
glass-epoxy board (a) (Note 2a)
VGS (V)
(V)

(2) Device mounted on a

2.0 glass-epoxy board (b) (Note 2b)
Drain power dissipation

−30 −12
VDS

−12 V
VDS
PD (W)

Gate-source voltage
Drain-source voltage

1.5
(1) DC −6 V
−20 −8
VDD = −24 V
1.0
(2) t = 5s
−10 −4
0.5 Common source
(2) DC VGS
ID = −4.5 A
Ta = 25°C
Pulse Test
0 0 0
0 40 80 120 160 0 4 8 12 16 20

Ambient temperature Ta (°C) Total gate charge Qg (nC)

5 2008-12-04
 TPC6108

rth − tw
1000

Device mounted on a glass-epoxy

board (b) (Note 2b)

100
impedance rth (°C/W)
Transient thermal

Device mounted on a glass-epoxy

board (a) (Note 2a)
10

SINGLE PULSE
0.1
1m 10m 100m 1 10 100 1000

Pulse width tw (S)

Safe Operating Area

−100

ID max (pulse) *
(A)

−10 1 ms *
Drain current ID

10 ms *

−1

※ Single pulse Ta=25℃

Curves must be derated linearly

with increase in temperature. VDSS max
−0.1
−0.1 −1 −10 −100

Drain-source voltage VDS (V)

6 2008-12-04
 TPC6108

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

7 2008-12-04