2SK3563

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3563
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)

• High forward transfer admittance: |Yfs| = 3.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 500 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 5
Drain current Pulse (t = 1 ms) A
IDP 20 1: Gate
(Note 1) 2: Drain
Drain power dissipation (Tc = 25°C) 3: Source
PD 35 W
Single pulse avalanche energy JEDEC ―
EAS 180 mJ
(Note 2)
JEITA SC-67
Avalanche current IAR 5 A
TOSHIBA 2-10U1B
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150 °C Weight : 1.7 g (typ.)

Storage temperature range Tstg -55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Ensure that the channel temperature does not exceed 150℃. 1

Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution. 3

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A ⎯ 1.35 1.50 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 2.5 A 1.5 3.5 ⎯ S
Input capacitance Ciss ⎯ 550 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 7 ⎯ pF

Output capacitance Coss ⎯ 70 ⎯

Rise time tr 10 V ID = 2.5 A VOUT ⎯ 10 ⎯

VGS
0V
Turn-on time ton RL = ⎯ 20 ⎯
15 Ω 90 Ω
Switching time ns
Fall time tf ⎯ 10 ⎯
VDD ∼
− 225 V
Turn-off time toff Duty <
= 1%, t w = 10 μs ⎯ 50 ⎯

Total gate charge Qg ⎯ 16 ⎯

Gate-source charge Qgs VDD ∼
− 400 V, VGS = 10 V, ID = 5 A ⎯ 10 ⎯ nC

Gate-drain charge Qgd ⎯ 6 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ 5 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 20 A
Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 5 A, VGS = 0 V, ⎯ 1400 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 9 ⎯ μC

Marking

K3563 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID – VDS ID – VDS
5 10
COMMON SOURCE 10,15 10,15
Tc = 25°C 6
5.5
PULSE TEST

(A)
COMMON SOURCE
(A)

4 8
6 Tc = 25°C
52.5 PULSE TEST

DRAIN CURRENT ID
DRAIN CURRENT ID

3 6 5.5
5

2 4.75 4
5
4.5
1 2
4.5
VGS = 4 V
VGS = 4 V
0 0
0 2 4 6 8 10 0 10 20 30 40 40

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

10 20
VDS (V)

COMMON SOURCE
COMMON SOURCE
Tc = 25℃
VDS = 20 V
(A)

8 16 PULSE TEST
PULSE TEST
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

6 12

ID = 5 A
4 8

Tc = −55°C 2.5
2 100 4
25
1.2

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = −55°C Tc = 25°C
PULSE TEST

25
RDS (ON) (mΩ)

100
⎪Yfs⎪ (S)

1 1
VGS = 10 V､15V

COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 0.1
0.1 1 10 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) – Tc IDR – VDS

5 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

DRAIN REVERSE CURRENT IDR

PULSE TEST Tc = 25°C
5
4 PULSE TEST
3
RDS (ON) (m Ω)

3
ID = 5A

(A)
1
2.5
2 VGS = 10 V
1.2 0.5

0.3 10
1
5
VGS = 0, −1 V
1
3
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5
GATE THRESHOLD VOLTAGE

Ciss 4
(pF)

1000
C

3
CAPACITANCE

Vth (V)

100 Coss

COMMON SOURCE
10 COMMON SOURCE
VDS = 10 V
VGS = 0 V 1
Crss ID = 1 mA
f = 1 MHz
Tc = 25°C PULSE TEST
1 0
0.1 1 3 5 10 30 50 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
50 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VGS

40 400 16
VDS VDD = 100 V
DRAIN-SOURCE VOLTAGE

GATE-SOURCE VOLTAGE

30 300 12
PD (W)

200
400
20 200 8
COMMON SOURCE
ID = 5 A
10 100 VGS 4
Tc = 25°C
PULSE TEST

0 0 0
0 40 80 120 160 200 0 5 10 15 20 25

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2

0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 200

ID max (PULSED) *
160
AVALANCHE ENERGY

100 μs *
10
(A)

ID max (CONTINUOUS) *
EAS (mJ)

120
DRAIN CURRENT ID

1 ms *

DC OPERATION 80
1 Tc = 25°C

40
※ SINGLE NONREPETITIVE

0.1 PULSE

Tc=25℃ 0
25 50 75 100 125 150
CURVES MUST BE DERATED

LINEARLY WITH INCREASE IN CHANNEL TEMPERATURE (INITIAL)

TEMPERATURE. VDSS max Tch (°C)
0.01
1 10 100 1000

DRAIN-SOURCE VOLTAGE VDS (V) BVDSS

15 V
−15 V IAR

VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 12.2mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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