TPC8109

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC8109
Lithium Ion Battery Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications

· Small footprint due to small and thin package

· Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 19 S (typ.)
· Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
· Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS -30 V

Drain-gate voltage (RGS = 20 kW) VDGR -30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID -10
Drain current A
Pulse (Note 1) IDP -40 JEDEC ―

Drain power dissipation (t = 10 s) JEITA ―

PD 1.9 W
(Note 2a) TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
PD 1.0 W Weight: 0.080 g (typ.)
(Note 2b)
Single pulse avalanche energy
EAS 130 mJ
(Note 3)
Avalanche current IAR -10 A Circuit Configuration
Repetitive avalanche energy 8 7 6 5
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
1 2 3 4
This transistor is an electrostatic sensitive device. Please handle with
caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 °C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8109 TYPE

※ Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 ´ 25.4 ´ 0.8 25.4 ´ 25.4 ´ 0.8
(unit: mm) (unit: mm)

(a) (b)

Note 3: VDD = -24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = -10 A

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: · on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

Year of manufacture
(One low-order digits of calendar year)

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 TPC8109
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA

Drain cut-OFF current IDSS VDS = -30 V, VGS = 0 V ¾ ¾ -10 mA
V (BR) DSS ID = -10 mA, VGS = 0 V -30 ¾ ¾
Drain-source breakdown voltage V
V (BR) DSX ID = -10 mA, VGS = 20 V -15 ¾ ¾
Gate threshold voltage Vth VDS = -10 V, ID = -1 mA -0.8 ¾ -2.0 V
VGS = -4 V, ID = -5 A ¾ 24 30
Drain-source ON resistance RDS (ON) mW
VGS = -10 V, ID = -5 A ¾ 14 20
Forward transfer admittance |Yfs| VDS = -10 V, ID = -5 A 9 19 ¾ S
Input capacitance Ciss ¾ 2260 ¾
Reverse transfer capacitance Crss VDS = -10 V, VGS = 0 V, f = 1 MHz ¾ 290 ¾ pF
Output capacitance Coss ¾ 350 ¾

Rise time tr ¾ 5 ¾
0V ID = -5 A
VGS VOUT
Turn-ON time ton -10 V ¾ 13 ¾

RL = 3.0 W
Switching time 4.7 W ns
Fall time tf ¾ 34 ¾

VDD ~
- -15 V
Turn-OFF time toff < ¾ 143 ¾
Duty = 1%, tw = 10 ms

Total gate charge

Qg ¾ 45 ¾
(gate-source plus gate-drain)
VDD ~- -24 V, VGS = -10 V, nC
Gate-source charge 1 Qgs1 ID = -10 A ¾ 6.5 ¾
Gate-drain (“miller”) charge Qgd ¾ 10 ¾

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ¾ ¾ ¾ -40 A

Forward voltage (diode) VDSF IDR = -11 A, VGS = 0 V ¾ ¾ 1.2 V

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 TPC8109

ID – VDS ID – VDS
-10 -40
-10 -3 -2.75 -5 -3.75 -3.5 Common source
-8 -4
-2.5 -6 Ta = 25°C
-6 -3.75
-8 -5 -3.5 -8 -4 Pulse test
-3.25 -30 -3.25

(A)
(A)

-10
Common source
-3

ID
-6
ID

Ta = 25°C
Pulse test

Drain current
Drain current

-20
-2.75
-4
-2.25
-2.5
-10
-2
VGS = -2 V -2.25

VGS = -2 V
0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -1 -2 -3 -4 -5

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

-40 -0.8
Common source Common source
VDS = -10 V Ta = 25°C
(V)

Pulse test Pulse test

-30 -0.6
(A)

VDS
ID

Drain-source voltage
Drain current

-20 -0.4

-10 -0.2 ID = -10 A

25
-2.5
-5
100 Ta = -55°C

0 0
0 -1 -2 -3 -4 -5 0 -2 -4 -6 -8 -10 -12

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

RDS (ON) – ID
|Yfs| – ID 500
100 300 Common source
Ta = 25°C
(S)

Drain-source ON resistance

25 Pulse test
ïYfsï

30 100
Ta = -55°C
RDS (ON) (mW)

50
100
Forward transfer admittance

10 30 VGS = -4 V

-10
3 10

5
1 3
Common source
VDS = -10 V
Pulse test
0.3 1
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -1 -10 -100

Drain current ID (A) Drain current ID (A)

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 TPC8109

RDS (ON) – Ta IDR – VDS

40 -100
Common source -5
Pulse test -10
-2.5

(A)
32 ID = -5 A -1.3
Drain-source ON resistance

Drain reverse current IDR

-10 -3
RDS (ON) (mW)

24
VGS = -4 V ID = -2.5, -5 A
-1.3
16
-1 VGS = 1 V
-1
-10
8
Common source
0 Ta = 25°C
Pulse test
0 -0.1
-80 -40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2

Ambient temperature Ta (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Ta

10000 -2.4
Common source
VDS = -10 V
Gate threshold voltage Vth (V)

-2.0
3000 ID = -1 mA
Ciss
Pulse test
-1.6
(pF)

1000
Capacitance C

-1.2
300 Coss
Crss
Common source -0.8
100 VGS = 0 V
f = 1 MHz -0.4
Ta = 25°C
30
-0.1 -0.3 -1 -3 -10 -30 -100
0
-80 -40 0 40 80 120 160
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)

PD – Ta Dynamic input/output characteristics

2.0 -30 -30
(1) Device mounted on a Common source
(1) glass-epoxy board (a)
(Note 2a) ID = -10 A
(W)

VDD = -24 V
(V)

(V)

1.6 (2) Device mounted on a Ta = 25°C

glass-epoxy board (b) Pulse test
PD

VDS

VGS

(Note 2b)
-20 -20
t = 10 s
Drain power dissipation

1.2
Drain-source voltage

Gate-source voltage

(2) VDS

-12 -12
0.8
-10 -6 VDD = -24 V -10

-6 VGS
0.4

0 0 0
0 50 100 150 200 0 20 40 60 80

Ambient temperature Ta (°C) Total gate charge Qg (nC)

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 TPC8109

rth - tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b)
Normalized transient thermal impedance

(Note 2b)
(1)
t = 10 s
100
rth (°C/W)

10

Single pulse

0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

-100

ID max (pulse) *

-30
(A)

1 ms*
10 ms*
ID

-10
Drain current

-3

-1

* Single pulse
Ta = 25°C
-0.3
Curves must be derated
linearly with increase in
temperature. VDSS max
-0.1
-0.1 -0.3 -1 -3 -10 -30 -100

Drain-source voltage VDS (V)

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 TPC8109

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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