2SK3662

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)

2SK3662
Switching Regulator, DC−DC Converter, Motor Drive
Applications Unit: mm

· Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.)

· High forward transfer admittance: |Yfs| = 55 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
· Enhancement-mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 60 V

Drain-gate voltage (RGS = 20 kW) VDGR 60 V
Gate-source voltage VGSS ±20 V

DC (Note 1) ID 35
Drain current A
Pulse (Note 1) IDP 105
Drain power dissipation (Tc = 25°C) PD 35 W
JEDEC ―
Single pulse avalanche energy
EAS 204 mJ
(Note 2) JEITA SC-67
Avalanche current IAR 35 A TOSHIBA 2-10R1B
Repetitive avalanche energy Weight: 1.9 g (typ.)
EAR 3.5 mJ
(Note 3)
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 3.57 °C/ W

Thermal resistance, channel to
Rth (ch−a) 62.5 °C/ W
ambient

Note 1: Please use devices on condition that the channel temperature is

below 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 227 mH, IAR = 35 A, RG = 25 W

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

1 2003-01-16
 2SK3662
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA

Drain cut-off current IDSS VDS = 60 V, VGS = 0 V ¾ ¾ 100 mA
V (BR) DSS ID = 10 mA, VGS = 0 V 60 ¾ ¾
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = -20 V 40 ¾ ¾
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ¾ 2.5 V
VGS = 4 V, ID = 18 A ¾ 12.5 19
Drain-source ON resistance RDS (ON) mW
VGS = 10 V, ID = 18 A ¾ 9.4 12.5
Forward transfer admittance |Yfs| VDS = 10 V, ID = 18 A 28 55 ¾ S
Input capacitance Ciss ¾ 5120 ¾
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 300 ¾ pF
Output capacitance Coss ¾ 500 ¾

Rise time tr 10 V ID = 18 A ¾ 6 ¾
VGS VOUT

RL = 1.67 W
Turn-on time ton 0V ¾ 19 ¾
Switching time ns
4.7 Ω

Fall time tf ¾ 20 ¾
VDD ≈ 30 V
Turn-off time toff Duty ≤ 1%, tw = 10 ms ¾ 115 ¾

Total gate charge

Qg ¾ 91 ¾
(gate-source plus gate-drain)
VDD ≈ 48 V, VGS = 10 V,
nC
Gate-source charge Qgs ID = 35 A ¾ 70 ¾
Gate-drain (“miller”) charge Qgd ¾ 21 ¾

Source-Drain Diode Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ¾ ¾ ¾ 35 A
(Note 1)
Pulse drain reverse current
IDRP ¾ ¾ ¾ 105 A
(Note 1)
Forward voltage (diode) VDS2F IDR1 = 35 A, VGS = 0 V ¾ ¾ -1.5 V
Reverse recovery time trr IDR = 35 A, VGS = 0 V, ¾ 60 ¾ ns
Reverse recovery charge Qrr dIDR/dt = 50 A/ms ¾ 58 ¾ nC

Marking

K3662 Type
※ Lot Number
※
Month (starting from alphabet A)

Year (last number of the christian era)

2 2003-01-16
 2SK3662

ID – VDS ID – VDS
40 100
10 6 Common source
6 4 3.5
4.2 Tc = 25°C
8
4 Pulse test
80
30 10
(A)

(A)
3.8
3.3
ID

ID
60
Drain current

Drain current
20 3.6

40
3.4
VGS = 3 V
10
Common source 20
Tc = 25°C VGS = 3 V
Pulse test
0 0
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

100 1.0
Common source Common source
VDS = 10 V Tc = 25°C
Pulse test Pulse test
(V)

80 0.8
(A)

VDS
ID

60 0.6
Drain-source voltage
Drain current

40 0.4 ID = 35 A

17
20 100 0.2

Tc = -55°C 9
25
0 0
0 1 2 3 4 5 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

ïYfsï – ID
300
RDS (ON) – ID
50
Common source
(S)

Common source
VDS = 10 V
30 Tc = 25°C
Drain-source on resistance
ïYfsï

Pulse test Pulse test

100 Tc = −55°C
RDS (ON) (mW)

4
Forward transfer admittance

50 25 10
100 VGS = 10 V
30
5

10

5 1
1 3 5 10 30 50 100 1 3 5 10 30 50 100

Drain current ID (A) Drain current ID (A)

3 2003-01-16
 2SK3662

RDS (ON) – Tc IDR – VDS

25 100
(mW)

Common source

(A)
RDS (ON)

20 Pulse test 17 A, 9 A 10
5

Drain reverse current IDR

15 ID = 35 A
Drain-source on resistance

3
VGS = 4 V 10

10 VGS = 10 V
ID = 35 A, 17 A, 9 A

5 Common source
Tc = 25°C
VGS = 0 V Pulse test
0 1
-80 -40 0 40 80 120 160 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Tc

10000 5
Common source
VDS = 10 V
Gate threshold voltage Vth (V)

Ciss ID = 1 mA
4
Pulse test
(pF)

1000
3
Capacitance C

Coss
2

Crss
100
1
Common source
VGS = 0 V
f = 1 MHz 0
-80 -40 0 40 80 120 160
Ta = 25°C
10
0.1 1 10 100 Case temperature Tc (°C)

Drain-source voltage VDS (V)

PD – Tc Dynamic input/output characteristics

40 80 16
Common source Common source
VDS = 10 A ID = 35 A
(W)

ID = 1 mA Tc = 25°C
(V)

(V)

Pulse test Pulse test

30 60 12
PD

VDS

VGS

VDS
Drain power dissipation

12
Drain-source voltage

Gate-source voltage

24
20 40 8
VDD = 48 V

10 20 4
VGS

0 0 0
0 40 80 120 160 0 40 80 120 160

Case temperature Tc (°C) Total gate charge Qg (nC)

4 2003-01-16
 2SK3662

rth – tw
3

Normalized transient thermal impedance

1
Duty = 0.5

0.3 0.2
rth (t)/Rth (ch-c)

0.1
0.1
0.05
PDM
0.02
0.03 t
0.01 Single pulse
T
0.01
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.00
10 m 100 m 1m 10 m 100 m 1 10

Pulse width tw (S)

Safe operating area EAS – Tch

300 250

ID max (pulsed)*
100
(mJ)

t = 1 ms* 200
ID max (continuous)
Avalanche energy EAS

30
150
(A)

t = 10 ms*
ID

10
100
Drain current

3
50

* Single nonrepetitive pulse 0

25 50 75 100 125 150
Tc = 25°C
0.3
Curves must be derated linearly Channel temperature (initial) Tch (°C)
with increase in temperature. VDSS max
0.1
0.1 1 10 100
BVDSS
Drain-source voltage VDS (V) 15 V
IAR
-15 V
VDD VDS

Test circuit Waveform

1 æ B VDSS ö
RG = 25 W Ε AS = × L × I2 × ç ÷
çB
VDD = 25 V, L = 227 mH 2 è VDSS - V DD ÷ø

5 2003-01-16
 2SK3662

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

6 2003-01-16