MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION PIN CONFIGURATION

M54563FP is an eight-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-  IN1→ 1 18 →O1 
sistors. This semiconductor integrated circuit performs high-  
 IN2→ 2 17 →O2 
current driving with extremely low input-current supply.  
 
 IN3→ 3 16 →O3 
 
 IN4→ 4 15 →O4 
INPUT   OUTPUT
 IN5→ 5 14 →O5 
 
FEATURES  13 →O6 

 IN6→ 6
Á High breakdown voltage (BV CEO ≥ 50V)  
 IN7→ 7 12 →O7 
Á High-current driving (Io(max) = –500mA)  
 IN8→ 8 11 →O8 
Á With clamping diodes
VS 9 10 GND
Á Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Á Wide operating temperature range (Ta = –20 to +75°C) Package type 18P4G(P)
Á Output current-sourcing type

NC 1 20 NC
 IN1→ 2 19 →O1 
APPLICATION  
 18 →O2 

Drives of relays, printers, LEDs, fluorescent display tubes  IN2→ 3
 
 IN3→ 4 17 →O3 
and lamps, and interfaces between MOS-bipolar logic sys-  
tems and relays, solenoids, or small motors  IN4→ 5 16 →O4 
INPUT   OUTPUT
 IN5→ 6 15 →O5 
 
 
 IN6→ 7 14 →O6 
 
 IN7→ 8 13 →O7 
FUNCTION  
 IN8→ 9 12 →O8 
The M54563P and M54563FP each have eight circuits,
VS 10 11 GND
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN Package type 20P2N-A(FP)
NC : No connection
Darlington transistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. V S and GND are used commonly among the eight
circuits. CIRCUIT DIAGRAM
The inputs have resistance of 3kΩ, and voltage of up to 10V
VS
is applicable. Output current is 500 mA maximum. Supply
20K
voltage V S is 50V maximum.
The M54563FP is enclosed in a molded small flat package, 3K
enabling space-saving design. INPUT

7.2K
1.5K 3K
OUTPUT

GND

The eight circuits share the VS and GND.

The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω

Aug. 1999
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)

Symbol Parameter Conditions Ratings Unit

VCEO # Collector-emitter voltage Output, L –0.5 ~ +50 V
VS Supply voltage 50 V
VI Input voltage –0.5 ~ +10 V
IO Output current Current per circuit output, H –500 mA
IF Clamping diode forward current –500 mA
VR # Clamping diode reverse voltage 50 V
Pd Power dissipation Ta = 25°C, when mounted on board 1.79(P)/1.10(FP) W
Topr Operating temperature –20 ~ +75 °C
Tstg Storage temperature –55 ~ +125 °C
# : Unused I/O pins must be connected to GND.

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Limits
Symbol Parameter Unit
min typ max
VS Supply voltage 0 — 50 V
Output current Duty Cycle
(Current per 1 cir- P : no more than 8% 0 — –350
IO FP : no more than 5%
cuit when 8 circuits mA
are coming on si- Duty Cycle
P : no more than 55% 0 — –100
multaneously) FP : no more than 30%
VIH “H” input voltage 2.4 — 10 V
VIL “L” input voltage 0 — 0.2 V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Limits
Symbol Parameter Test conditions Unit
min typ+ max
IS (leak) # Supply leak current VS = 50V, VI = 0.2V — — 100 µA
VS = 10V, VI = 2.4V, IO = –350mA — 1.6 2.4
VCE (sat) Collector-emitter saturation voltage V
VS = 10V, VI = 2.4V, IO = –100mA — 1.45 2.0
VI = 3V — 0.6 1.0
II Input current mA
VI = 10V — 2.9 5.0
IS Supply current VS = 50V, VI = 3V (all input) — 5.6 15.0 mA
VF Clamping diode forward voltage IF = –350mA — –1.2 –2.4 V
IR # Clamping diode reverse current VR = 50V — — 100 µA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Limits
Symbol Parameter Test conditions Unit
min typ max
ton Turn-on time — 100 — ns
CL = 15pF (note 1)
toff Turn-off time — 4800 — ns

Aug. 1999
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

NOTE 1 TEST CIRCUIT TIMING DIAGRAM

INPUT VS

Measured device 50% 50%

INPUT

PG OUTPUT

50Ω RL CL 50% 50%

OUTPUT

ton toff

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0 to 2.4V
(2) Input-output conditions : RL = 30Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes

TYPICAL CHARACTERISTICS

Output Saturation Voltage

Thermal Derating Factor Characteristics
Output Current Characteristics
2.0 –500
M54563P
VS = 10V
VI = 2.4V
Power dissipation Pd (W)

–400 Ta = 75°C
Output current IO (mA)

1.5 Ta = 25°C
Ta = –20°C

M54563FP
–300
1.0
–200

0.5
–100

0 0
0 25 50 75 100 0 0.5 1.0 1.5 2.0 2.5

Ambient temperature Ta (°C) Output saturation voltage VCE (sat) (V)

Duty-Cycle-Output Current Characteristics Duty-Cycle-Output Current Characteristics

(M54563P) (M54563P)
–500 ➀ –500

➀
–400 –400
Output current IO (mA)

Output current IO (mA)

–300 –300
➂
➁
–200 ➃ –200
➄ ➂
•The output current values ➅ •The output current values
represent the current per circuit. ➆ represent the current per circuit.
➃
–100 ➇ –100 ➄
•Repeated frequency ≥ 10Hz •Repeated frequency ≥ 10Hz ➅
•The value in the circle represents the •The value in the circle represents the ➆
➇
value of the simultaneously-operated circuit. value of the simultaneously-operated circuit.
•Ta = 25°C •Ta = 75°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Aug. 1999
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Duty-Cycle-Output Current Characteristics Duty-Cycle-Output Current Characteristics

(M54563FP) (M54563FP)
–500 –500

➀
–400 –400
Output current IO (mA)

Output current IO (mA)

–300 –300
➀
➁
–200 –200
➂
➁
•The output current values ➃
represent the current per circuit. •The output current values ➂
–100 ➄ –100
•Repeated frequency ≥ 10Hz ➅ represent the current per circuit. ➃
•The value in the circle represents the ➆ •Repeated frequency ≥ 10Hz ➄
➇ ➅
value of the simultaneously-operated circuit. •The value in the circle represents the ➆
•Ta = 25°C value of the simultaneously-operated circuit. •Ta = 75°C ➇
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Grounded Emitter Transfer Characteristics Clamping Diode Characteristics

–500 500

VS = 20V
Forward bias current IF (mA)

–400 VS-VO = 4V 400

Output current IO (mA)

Ta = 75°C Ta = 75°C
Ta = 25°C Ta = 25°C
Ta = –20°C Ta = –20°C
–300 300

–200 200

–100 100

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0

Input voltage VI (V) Forward bias voltage VF (V)

Input Characteristics Input Characteristics

1.0 5
VS = 20V
Ta = 75°C
0.8 Ta = 25°C 4 VS = 20V
Ta = –20°C Ta = 75°C
Input current II (mA)

Input current II (mA)

Ta = 25°C
Ta = –20°C
0.6 3

0.4 2

0.2 1

0 0
0 1 2 3 4 5 0 2 4 6 8 10

Input voltage VI (V) Input voltage VI (V)

Aug. 1999