www.DataSheet4U.

com
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ARY M63850P/FP
IMIN ation
.
nge.

PREL
pecific to cha
o t a final s subject
re
is is nic limits a
e: Th tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

DESCRIPTION PIN CONFIGURATION

The M63850P/FP is a inverter input power DMOS transistor
array that consists of 4 independent output N-channel COM 1 16 →O4
DMOS transistors. O1← 2 15 ←IN4

IN1→ 3 14 VDD

 4 13  GND
GND  
 5 12 
FEATURES IN2→ 6 11 ←IN3

4 circuits of N-channels DMOS NC 7 10 →O3

High breakdown voltage (VDS ≥ 80V) O2← 8 9 COM

High-current driving (IDS(max) = 1.5A) NC : No connection

With clamping diodes
Package type 16P4(P)

Drain-source on-state low resistance 16P2N(FP)
(RON = 0.72Ω, @ = 1.25A)

Wide operating temperature range (Ta = –40 to +85°C)

CIRCUIT DIAGRAM
VDD
COM

OUTPUT
APPLICATION 30k
Drives of relays and printers, digit drives of indication ele-
INPUT
ments (LEDs and lamps) 4.2k

GND

The four circuits share the COM and GND.

FUNCTION The diode, indicated with the dotted line, is parasitic, and
The M63850P/FP is consists of 4 independent N-channel cannot be used.
DMOS transistors. Each DMOS transistor is connected in a Unit : Ω
common-source with GND PIN. The clamp diodes for spike
killers are connected between the output pin and the COM
pin of each DMOS transistor. The maximum of Drain current
is 1.5A. The maximum Drain-Source voltage is 80V.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol Parameter Conditions Ratings Unit

VDD Supply voltage 7 V
VDS Drain-source voltage Output, H –0.5 ~ +80 V
IDS Drain current Current per circuit output, L 1.5 A
VI Input voltage –0.5 ~ VDD V
VR Clamping diode reverse voltage 80 V
IF Clamping diode forward current 1.5 A
Pd Power dissipation Ta = 25°C, when mounted on board 1.47(P)/1.00(FP) W
Topr Operating temperature –40 ~ +85 °C
Tstg Storage temperature –55 ~ +125 °C

Apr. 2005
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ARY M63850P/FP
IMIN ation
.
nge.

PREL
pecific to cha
o t a final s subject
re
is is nic limits a
e: Th tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Limits
Symbol Parameter Conditions Unit
min typ max
VDD Supply voltage 4.5 5.0 5.5 V
VDS Drain-source voltage 0 — 80 V
VDD = 5V, Duty Cycle
Drain current P : no more than 4% 0 — 1.25
(Current per 1 circuit when 4 FP : no more than 2%
IDS A
circuits are coming on simul- VDD = 5V, Duty Cycle
taneously) P : no more than 36% 0 — 0.7
FP : no more than 15%
VIH “H” input voltage VCC-1.0 — VCC V
VIL “L” input voltage 0 — VCC-3.0 V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Limits
Symbol Parameter Test conditions Unit
min typ max
IDD(ON) On supply current VDD = 5.5V, VI = 0V, 1 circuit only — 130 300 µA
IDD(OFF) Off supply current VDD = 5.5V, VI = 5.5V — — 10 µA
IO(LEAK) Output leak current VDD = 5.5V, VI = 5.5V, VDS = 80V — — 10 µA
VI = 4.5V, IDS = 0.7A — 0.45 0.72
VON Output on voltage V
VI = 4.5V, IDS = 1.25A — 0.9 1.44
RON Output on resistance VI = 4.5V, IDS = 1.25A — 0.72 1.15 Ω
IIH “H” input current VDD = 5.5V, VI = 5.5V — — 10 µA
IIL “L” input current VDD = 5.5V, VI = 0V — –130 –300 µA
IR Clamping diode reverse current VR = 80V — — 10 µA
VF Clamping diode forward voltage IF = 1.25A — 1.3 2.0 V

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Limits
Symbol Parameter Test conditions Unit
min typ max
ton Turn-on time — 45 — ns
CL = 15pF (Note 1)
toff Turn-off time — 125 — ns

Note 1 : TEST CIRCUIT TIMING DIAGRAM

INPUT VDD VO
INPUT
Measured 50% 50%
device RL
OPEN
PG OUTPUT
OUTPUT
50Ω CL 50% 50%

ton toff

(1)Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 5V
(2)Input-output conditions : RL = 8.3Ω, Vo = 10V, VDD = 4.5V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes.

Apr. 2005
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ARY M63850P/FP
IMIN ation
.
nge.

PREL
pecific to cha
o t a final s subject
re
is is nic limits a
e: Th tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

TYPICAL CHARACTERISTICS

Thermal Derating Factor Characteristics Input Characteristics

2.0 –160
VDD = 5V
Power dissipation Pd (W)

M63850P
1.5 –120

Input current II (µA)

M63850FP
1.0 –80

0.744
Ta = 85°C
0.5 0.520
–40
Ta = –40°C
Ta = 25°C
0 0
0 25 50 75 85 100 0 1 2 3 4 5

Ambient temperature Ta (°C) Input voltage VDD - VI (V)

Duty Cycle - Drain Current Characteristics Duty Cycle - Drain Current Characteristics
(M63850P) (M63850P)
2.0 2.0 •The drain current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents
the value of the simultaneously-
1.5 1.5
Drain current IDS (A)

Drain current IDS (A)

operated circuit.
•Ta = 85°C, VDD = 5V

1
1.0 1.0
2 1
3 2
•The drain current values represent the 4 3
0.5 current per circuit. 0.5
4
•Repeated frequency ≥ 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
•Ta = 25°C, VDD = 5V
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Duty Cycle - Drain Current Characteristics Duty Cycle - Drain Current Characteristics
(M63850FP) (M63850FP)
2.0 2.0
•The drain current values •The drain current values
represent the current per circuit. represent the current per circuit.
•Repeated frequency ≥ 10Hz •Repeated frequency ≥ 10Hz
•The value in the circle represents •The value in the circle represents
the value of the simultaneously- the value of the simultaneously-
1.5 1.5
Drain current IDS (A)

Drain current IDS (A)

operated circuit. operated circuit.

•Ta = 25°C, VDD = 5V •Ta = 85°C, VDD = 5V

1.0 1.0
1
2 1
0.5 3 0.5 2
4 3
4

0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Apr. 2005
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ARY M63850P/FP
IMIN ation
.
nge.

PREL
pecific to cha
o t a final s subject
re
is is nic limits a
e: Th tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

Input Voltage - Drain Current Supply Voltage - On Supply Current

Characteristics Characteristics
1.6 160

On-state supply current IDD(ON) (µA)

VDD = 5V VI = 0.5V
VDS = 2V One circuit only

1.2 120
Drain current IDS (A)

Ta = –40°C
0.8 80
Ta = 85°C

Ta = 25°C Ta = 85°C

0.4 40
Ta = –40°C

Ta = 25°C
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Input voltage VI (V) Supply voltage VDD (V)

Output On Voltage - Drain Current Output On Voltage - Drain Current

Characteristics Characteristics
1.6 200
VDD = 4.5V VDD = 4.5V
VI = 0.5V VI = 0.5V
160
1.2 Ta = –40°C Ta = –40°C
Drain current IDS (A)
Drain current IDS (A)

120
Ta = 85°C
0.8
Ta = 85°C
80
Ta = 25°C
Ta = 25°C
0.4
40

0 0
0 0.4 0.8 1.2 1.6 0 0.05 0.10 0.15 0.20

Output on voltage VON (V) Output on voltage VON (V)

Clamping Diode Characteristics Switching Characteristics

1.6 103
Clamping diode forward current IF (A)

Ta = 25°C
7
5

1.2
Switching time (nsec)

3
Ta = 85°C
2
toff

0.8 102
Ta = 25°C
7
5 ton

0.4 3
2
Ta = –40°C
0 101
0 0.4 0.8 1.2 1.6 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104

Clamping diode forward voltage VF (V) Drain current IDS (mA)

Apr. 2005
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ARY M63850P/FP
IMIN ation
.
nge.

PREL
pecific to cha
o t a final s subject
re
is is nic limits a
e: Th tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

Drain Current - Output On Resistance Output On Resistance - Ambient Temperature

Characteristics Characteristics
Drain-source on-state resistance RON (Ω)

Drain-source on-state resistance RON (Ω)

1.0 1.6
Ta = 25°C VDD = 4.5V
Vcc = 4.5V
0.8
Vcc = 5.0V 1.2

0.6
0.8
Vcc = 5.5V
0.4

0.4
0.2

0 1 0
10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 –40 –20 0 20 40 60 80 100

Drain current IDS (mA) Ambient temperature Ta (°C)

Apr. 2005