sct3040kw7 e

SCT3040KW7
N-channel SiC power MOSFET Datasheet
lOutline
TO-263-7L
VDSS 1200V
RDS(on) (Typ.) 40mΩ
*1
ID 56A
PD 267W
lInner circuit
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
Please note Driver Source and Power Source are
5) Simple to drive not exchangeable. Their exchange might lead to
malfunction.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
lApplication Packing Embossed tape
・Solar inverters Reel size (mm) 330

・DC/DC converters Tape width (mm) 24
Type
・Switch mode power supplies Basic ordering unit (pcs) 1000
・Induction heating Taping code TL
・Motor drives Marking SCT3040KW7
lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified)

Parameter Symbol Value Unit
Drain - Source Voltage VDSS 1200 V
Tc = 25°C ID *1 56 A
Continuous Drain current
Tc = 100°C ID *1 39 A
*2
Pulsed Drain current (Tc = 25°C) ID,pulse 140 A
Gate - Source voltage (DC) VGSS -4 to +22 V
*3
Gate - Source surge voltage (tsurge < 300ns) VGSS_surge -4 to +26 V
Recommended drive voltage VGS_op*4 0 / +18 V
Virtual Junction temperature Tvj 175 °C
Range of storage temperature Tstg -55 to +175 °C
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©2022 ROHM Co., Ltd. All rights reserved.
TSQ50252-SCT3040KW7
TSZ22111・14・001 1/15 1.Nov.2022 - Rev.003
SCT3040KW7 Datasheet
lElectrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 0V, ID = 1mA
Drain - Source breakdown
V(BR)DSS Tvj = 25°C 1200 - - V
voltage
Tvj = -55°C 1200 - -
VGS = 0V, VDS =1200V
Zero Gate voltage
IDSS Tvj = 25°C - 1 10 μA
Drain current
Tvj = 150°C - 2 -
Gate - Source
IGSS+ VGS = +22V, VDS = 0V - - 100 nA
leakage current
Gate - Source
IGSS- VGS = -4V, VDS = 0V - - -100 nA
leakage current
Gate threshold voltage VGS (th) VDS = 10V, ID = 10mA 2.7 - 5.6 V
VGS = 18V, ID = 20A
Static Drain - Source
RDS(on) *5 Tvj = 25°C - 40 52 mΩ
on - state resistance
Tvj = 150°C - 68 -
Gate input resistance RG f = 1MHz, open drain - 7 - Ω
lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.44 0.56 K/W
lTypical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
-2 -3
Rth1 4.06×10 Cth1 7.06×10
-2 -2
Rth2 6.86×10 K/W Cth2 2.59×10 Ws/K
-1 -2
Rth3 3.31×10 Cth3 2.77×10
Tj Rth1 Rth,n Tc
PD Cth1 Cth2 Cth,n
Ta
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TSQ50252-SCT3040KW7
TSZ22111・15・001 2/15 1.Nov.2022 - Rev.003
lElectrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Min. Typ. Max.
Transconductance gfs *5 VDS = 10V, ID = 20A - 8.3 - S
Input capacitance Ciss VGS = 0V - 1337 -
Output capacitance Coss VDS = 800V - 76 - pF
Reverse transfer capacitance Crss f = 1MHz - 27 -
Effective output capacitance, VGS = 0V

Co(er) - 122 - pF
energy related VDS = 0V to 600V
VDS = 600V
Total Gate charge Qg *5 - 107 -
ID = 20A
*5
Gate - Source charge Qgs VGS = 18V - 17 - nC
See Fig. 1-1.

Gate - Drain charge Qgd *5 - 56 -
VDS = 600V
Turn - on delay time td(on) *5 - 6 -
ID = 20A
*5
Rise time tr VGS = 0V/+18V - 19 -
ns
*5 RG = 0Ω, L = 750μH
Turn - off delay time td(off) - 29 -
Lσ = 50nH, Cσ = 10pF
Fall time tf *5 See Fig. 2-1, 2-2, 2-3. - 19 -
Eon includes diode

Turn - on switching loss Eon *5 - 286 -
reverse recovery.
μJ
*5
Turn - off switching loss Eoff - 69 -
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TSQ50252-SCT3040KW7
TSZ22111・15・001 3/15 1.Nov.2022 - Rev.003
lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified)
Values
Min. Typ. Max.
Body diode continuous,
IS *1 - - 56 A
forward current
Tc = 25°C
Body diode direct current, *2
ISM - - 140 A
pulsed
Forward voltage VSD *5 VGS = 0V, IS = 20A - 3.2 - V
IF = 20A
Reverse recovery time trr *5 - 25 - ns
VR = 600V
*5
Reverse recovery charge Qrr di/dt = 2500A/μs - 535 - nC
Lσ = 50nH, Cσ = 10pF
Peak reverse recovery current Irrm *5 - 35 - A
See Fig. 3-1, 3-2.
*1 Limited by maximum Tvj and for Max. RthJC.
*2 PW  10μs, Duty cycle  1%
*3 Example of acceptable VGS waveform
Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.
*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.
*5 Pulsed
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TSQ50252-SCT3040KW7
TSZ22111・15・001 4/15 1.Nov.2022 - Rev.003
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve
300 1000
Operation in this area is limited by RDS(on)
250
Power Dissipation : PD [W]
100
Drain Current : ID [A]

200
PW = 1μs*
150 10
PW = 10μs*
PW = 100μs
100 PW = 1ms
1 PW = 10ms
50 Tc = 25ºC
Single Pulse
*Calculation(PW10μs)
0 0.1
25 75 125 175 0.1 1 10 100 1000 10000
Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal

Impedance vs. Pulse Width
1
Transient Thermal Impedance :
0.1
ZthJC [K/W]
0.01
0.001
Tc = 25ºC
Single Pulse
0.0001
0.000001 0.0001 0.01 1 100
Pulse Width : PW [s]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 5/15 1.Nov.2022 - Rev.003
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
50 25
20V
20V
18V
40 16V 20 18V
12V

14V 16V
Tvj = 25ºC 14V
30 15
Pulsed
12V
10V
20 10V 10
Tvj = 25ºC
Pulsed
10 5
VGS= 8V
VGS= 8V
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics
0
Tvj = 25ºC
Pulsed
-10
VGS = -4V
VGS = -2V
VGS = 0V
-20 VGS = 18V
-30
-40
-50
-10 -8 -6 -4 -2 0
Drain - Source Voltage : VDS [V]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 6/15 1.Nov.2022 - Rev.003
Fig.7 Tvj = 150ºC Typical Output Fig.8 Tvj = 150ºC Typical Output
Characteristics(I) Characteristics(II)
50 25
20V 20V 10V
16V
18V
40 14V 20 12V
12V 14V

10V
16V
30 15 18V
20 10 VGS= 8V
VGS= 8V
10 5
Tvj = 150ºC Tvj = 150ºC
Pulsed Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Fig.9 Tvj = 150ºC 3rd Quadrant Fig.10 Body Diode Forward Voltage
Characteristics 　　　 vs. Gate - Source Voltage
0 6
Body Diode Forward Voltage : VSD [V]
Tvj = 150ºC ID=20A

Pulsed
5
-10
VGS = -4V
VGS = -2V 4
VGS = 0V
-20 VGS = 18V
3
-30
2 Tvj= 150ºC
-40
1
Tvj= 25ºC
-50 0
-10 -8 -6 -4 -2 0 -4 0 4 8 12 16 20
Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 7/15 1.Nov.2022 - Rev.003
Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II)
100 50
VDS = 10V VDS = 10V
Pulsed Pulsed
40
10

30
1 Tvj= 150ºC
Tvj= 75ºC Tvj= 150ºC
Tvj= 25ºC 20 Tvj= 75ºC
Tvj= -25ºC Tvj= 25ºC
Tvj= -25ºC
0.1
10
0.01 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage

Fig.14 Transconductance vs. Drain Current
vs. Virtual Junction Temperature
6 10
VDS = 10V
Gate Threshold Voltage : V GS(th) [V]
VDS = 10V
5 ID = 10mA Pulsed
Transconductance : gfs [S]
3 1
Tvj = 150ºC
2 Tvj = 75ºC
Tvj = 25ºC
Tvj = -25ºC
1
0 0.1
-50 0 50 100 150 200 0.1 1 10
Virtual Junction Temperature : Tvj [ºC] Drain Current : ID [A]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 8/15 1.Nov.2022 - Rev.003
Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Virtual Junction Temperature
0.16 0.10
Tvj = 25ºC VGS = 18V
0.14 ID= 37A Pulsed Pulsed
Static Drain - Source On-State

0.08
Resistance : RDS(on) [Ω]

0.12
0.10 0.06 ID= 37A
0.08 ID= 20A

ID= 20A
0.04
0.06
ID= -20A
0.04 ID= -20A
0.02
0.02
0.00 0.00
8 10 12 14 16 18 20 22 -50 0 50 100 150 200
Gate - Source Voltage : VGS [V] Virtual Junction Temperature : Tvj [ºC]
Fig.17 Static Drain - Source On - State Fig.18 Normalized Drain - Source Breakdown
Resistance vs. Drain Current Voltage vs. Virtual Junction Temperature
0.1 1.04
1.03
Normalized Drain - Source
Breakdown Voltage
1.02
Tvj = 150ºC 1.01

Tvj = 125ºC
Tvj = 75ºC
Tvj = 25ºC 1.00
Tvj = -25ºC
0.99
VGS = 18V
Pulsed
0.01 0.98
1 10 100 -50 0 50 100 150 200
Drain Current : ID [A] Virtual Junction Temperature : Tvj [ºC]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 9/15 1.Nov.2022 - Rev.003
Fig.19 Typical Capacitance

Fig.20 Coss Stored Energy
　　　　　vs. Drain - Source Voltage
10000 40
Tvj = 25ºC
Ciss
Coss Stored Energy : EOSS [µJ]

1000 30
Capacitance : C [pF]
Coss
100 Crss 20
10 10
Tvj = 25ºC
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 1000 0 200 400 600 800
Fig.21 Dynamic Input Characteristics

*Gate Charge Waveform
20
Tvj = 25ºC
Gate - Source Voltage : VGS [V]
VDD = 600V
ID = 20A
15 Pulsed
10
0
0 20 40 60 80 100 120
Total Gate Charge : Qg [nC]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 10/15 1.Nov.2022 - Rev.003
Fig.22 Typical Switching Time Fig.23 Typical Switching Loss

　　　　　vs. External Gate Resistance 　　　　　vs. Drain - Source Voltage
160 500
Tvj = 25°C
Tvj = 25°C
140 ID = 20A
VDD= 600V
td(off) 400 VGS= +18V/0V
VGS= +18V/0V
Switching Energy : E [µJ]

120 RG = 0Ω Eon
Switching Time : t [ns]
ID = 20A
L= 750μH
L = 750μH
100 300
tr
80
200
60 tf
40
100
20 td(on) Eoff
0 0
0 10 20 30 300 400 500 600 700 800 900
External Gate Resistance : RG [Ω] Drain - Source Voltage : VDS [V]
Fig.24 Typical Switching Loss Fig.25 Typical Switching Loss

　　　　　vs. Drain Current 　　　　　vs. External Gate Resistance
1800 1800
Tvj = 25°C Tvj = 25°C
1600 VDD= 600V 1600
ID = 20A
VGS= +18V/0V VDD= 600V
1400 1400
RG = 0Ω VGS= +18V/0V
1200 L= 750μH 1200 L= 750μH
1000 1000
800 800
Eon
600 Eon 600
400 400
Eoff
200 200
Eoff
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30
Drain Current : ID [A] External Gate Resistance : RG [Ω]
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TSQ50252-SCT3040KW7
TSZ22111・15・001 11/15 1.Nov.2022 - Rev.003
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge Measurement Circuit
Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time
Fig.2-3 Waveforms for Switching Energy Loss

Eon = ‫ ׬‬ID ∙ VDS dt Eoff = ‫ ׬‬ID ∙ VDS dt
Irr Vsurge
VDS
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit Fig.3-2 Reverse Recovery Waveform
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TSQ50252-SCT3040KW7
TSZ22111・15・001 12/15 1.Nov.2022 - Rev.003
lPackage Dimensions
Unit: mm
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TSQ50252-SCT3040KW7
TSZ22111・15・001 13/15 1.Nov.2022 - Rev.003
RECOMMENDED FOOTPRINT DIMENSIO NS
Unit: mm
www.rohm.com
TSQ50252-SCT3040KW7
TSZ22111・15・001 14/15 1.Nov.2022 - Rev.003
lDie Bonding Layout
: Die position
・Front view of the packaging.
・Dimensions are design values.
・If the heat sink is to be installed, it should be in contact with the die bonding point.
Unit: mm
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TSQ50252-SCT3040KW7
TSZ22111・15・001 15/15 1.Nov.2022 - Rev.003
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System

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© 2012 ROHM Co., Ltd. All rights reserved.
R1107 S
Datasheet
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.

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SCT3040KW7

N-channel SiC power MOSFET Datasheet

・Solar inverters Reel size (mm) 330

lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified)

lElectrical characteristics (Tvj = 25°C unless otherwise specified)

lTypical Transient Thermal Characteristics

PD Cth1 Cth2 Cth,n

lElectrical characteristics (Tvj = 25°C unless otherwise specified)

Effective output capacitance, VGS = 0V

See Fig. 1-1.

Eon includes diode

*1 Limited by maximum Tvj and for Max. RthJC.

*2 PW  10μs, Duty cycle  1%

*3 Example of acceptable VGS waveform

lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Drain Current : ID [A]

Fig.3 Typical Transient Thermal

Pulse Width : PW [s]

lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Drain Current : ID [A]

Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics

lElectrical characteristic curves

Drain Current : ID [A]

Tvj = 150ºC ID=20A

lElectrical characteristic curves

Drain Current : ID [A]

Fig.13 Gate Threshold Voltage

lElectrical characteristic curves

Static Drain - Source On-State

Resistance : RDS(on) [Ω]

0.10 0.06 ID= 37A

0.08 ID= 20A

Tvj = 150ºC 1.01

lElectrical characteristic curves

Fig.19 Typical Capacitance

Coss Stored Energy : EOSS [µJ]

Fig.21 Dynamic Input Characteristics

lElectrical characteristic curves

Fig.22 Typical Switching Time Fig.23 Typical Switching Loss

Switching Energy : E [µJ]

Fig.24 Typical Switching Loss Fig.25 Typical Switching Loss

Switching Energy : E [µJ]

lMeasurement circuits and waveforms

Fig.1-1 Gate Charge Measurement Circuit

Fig.2-3 Waveforms for Switching Energy Loss

RECOMMENDED FOOTPRINT DIMENSIO NS

lDie Bonding Layout

・Front view of the packaging.

・Dimensions are design values.

Thank you for your accessing to ROHM product informations.

ROHM Customer Support System

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