X-Class HiPerFETTM IXFN110N85X VDSS = 850V

Power MOSFET ID25 = 110A

D
RDS(on)  
33m
N-Channel Enhancement Mode
Avalanche Rated G
Fast Intrinsic Diode
S miniBLOC, SOT-227
S
E153432


S
Symbol Test Conditions Maximum Ratings G
VDSS TJ = 25C to 150C 850 V
VDGR TJ = 25C to 150C, RGS = 1M 850 V
VGSS Continuous  30 V
VGSM Transient  40 V S
D
ID25 TC = 25C 110 A
IDM TC = 25C, Pulse Width Limited by TJM 220 A
G = Gate D = Drain
IA TC = 25C 55 A S = Source
EAS TC = 25C 3 J
PD TC = 25C 1170 W
dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns
TJ -55 ... +150 C Features
TJM 150 C
Tstg -55 ... +150 C 
International Standard Package

miniBLOC, with Aluminium Nitride
VISOL 50/60 Hz, RMS t = 1 minute 2500 V~
Isolation
IISOL  1mA t = 1 second 3000 V~ 
Isolation Voltage 2500V~
Md Mounting Torque 1.5/13 Nm/lb.in

High Current Handling Capability
Terminal Connection Torque 1.3/11.5 Nm/lb.in

Fast Intrinsic Diode

Avalanche Rated
Weight 30 g 
Low RDS(on)

Advantages


High Power Density
Symbol Test Conditions Characteristic Values 
Easy to Mount
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max. 
Space Savings
BVDSS VGS = 0V, ID = 3mA 850 V
VGS(th) VDS = VGS, ID = 8mA 3.5 5.5 V Applications

IGSS VGS =  30V, VDS = 0V 200 nA 

Switch-Mode and Resonant-Mode
IDSS VDS = VDSS, VGS = 0V 50 A Power Supplies

DC-DC Converters
TJ = 125C 5 mA 
PFC Circuits
RDS(on) VGS = 10V, ID = 55A, Note 1 33 m 
AC and DC Motor Drives

Robotics and Servo Controls

© 2019 IXYS CORPORATION, All Rights Reserved DS100731A(11/19)

 IXFN110N85X
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 55A, Note 1 43 72 S
RGi Gate Input Resistance 0.55 
Ciss 17 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 16 nF
Crss 260 pF
Effective Output Capacitance
Co(er) Energy related VGS = 0V 470 pF
Co(tr) VDS = 0.8 • VDSS 2170 pF
Time related
td(on) 50 ns
Resistive Switching Times
tr 25 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A
td(off) 144 ns
RG = 1(External)
tf 11 ns
Qg(on) 425 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 55A 105 nC
Qgd 225 nC
RthJC 0.107C/W
RthCS 0.05C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 110 A
ISM Repetitive, Pulse Width Limited by TJM 440 A
VSD IF = IS , VGS = 0V, Note 1 1.4 V
trr 205 ns
IF = 55A, -di/dt = 300A/s
QRM 5.5  μC
VR = 100V, VGS = 0V
IRM 54.0 A

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXFN110N85X
o o
Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C
110 250
VGS = 10V VGS = 10V
100 9V
90 200
8V
80

70 8V
I D - Amperes

I D - Amperes
150
60

50 7V
100
40
7V
30

20 50
6V

10 6V
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25
VDS - Volts VDS - Volts

o
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.
Fig. 3. Output Characteristics @ TJ = 125 C
Junction Temperature
110 3.0
VGS = 10V
100 VGS = 10V
8V 2.6
90

80 2.2
RDS(on) - Normalized

70 7V I D = 110A
I D - Amperes

1.8
60
I D = 55A
50
1.4
40
6V
30 1.0

20
0.6
10
5V
0 0.2
0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages
Drain Current vs. Junction Temperature
1.3
3.0 VGS = 10V
1.2
o
TJ = 125 C
BVDSS / VGS(th) - Normalized

2.6 BVDSS
1.1
RDS(on) - Normalized

2.2 1.0

0.9
1.8

0.8
1.4 o VGS(th)
TJ = 2 C 0.7

1.0
0.6

0.6 0.5
0 50 100 150 200 250 -60 -40 -20 0 20 40 60 80 100 120 140 160
I D - Amperes TJ - Degrees Centigrade

© 2019 IXYS CORPORATION, All Rights Reserved

 IXFN110N85X
o o
Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C
110 250
VGS = 10V VGS = 10V
100 9V
90 200
8V
80

70 8V
I D - Amperes

I D - Amperes
150
60

50 7V
100
40
7V
30

20 50
6V

10 6V
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25
VDS - Volts VDS - Volts

o
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.
Fig. 3. Output Characteristics @ TJ = 125 C
Junction Temperature
110 3.0
VGS = 10V
100 VGS = 10V
8V 2.6
90

80 2.2
RDS(on) - Normalized

70 7V I D = 110A
I D - Amperes

1.8
60
I D = 55A
50
1.4
40
6V
30 1.0

20
0.6
10
5V
0 0.2
0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages
Drain Current vs. Junction Temperature
1.3
3.0 VGS = 10V
1.2
o
TJ = 125 C
BVDSS / VGS(th) - Normalized

2.6 BVDSS
1.1
RDS(on) - Normalized

2.2 1.0

0.9
1.8

0.8
1.4 o VGS(th)
TJ = 2 C 0.7

1.0
0.6

0.6 0.5
0 50 100 150 200 250 -60 -40 -20 0 20 40 60 80 100 120 140 160
I D - Amperes TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXFN110N85X

Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area
160 1000

140
RDS(on) Limit

120 100 25μs

E OSS - MicroJoules

100 100μs

I D - Amperes
80 10

60

1ms
40 1 o
TJ = 150 C
o
TC = 25 C
20
Fig. 15. Maximum Transient Single
Thermal Pulse
Impedance 10ms
DC
01 0.1
0 100 200 300 400 500 600 700 800 900 1 10 100 1,000
VDS - Volts VDS - Volts

Fig. 15. Maximum Transient Thermal Impedance

0.2 aaaaa

0.1
Z(th)JC - K / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

© 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_110N85X (U9-D307) 6-06-16
 IXFN110N85X
SOT-227 Outline

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXFN110N85X

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