FCP11N60/FCPF11N60

December 2008
TM
SuperFET
FCP11N60/FCPF11N60
General Description Features
SuperFETTM is a new generation of high voltage MOSFETs • 650V @Tj = 150°C
from Fairchild with outstanding low on-resistance and low • Typ. Rds(on)=0.32Ω
gate charge performance, a result of proprietary technology • Ultra low gate charge (typ. Qg=40nC)
utilizing advanced charge balance mechanisms. • Low effective output capacitance (typ. Coss.eff=95pF)
This advanced technology has been tailored to minimize • 100% avalanche tested
conduction loss, provide superior switching performance, • RoHS Compliant
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.

D
!

◀ ▲
G! ●
●

TO-220 GD S
TO-220F
G DS FCPF Series
FCP Series !
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FCP11N60 FCPF11N60 Units

ID Drain Current - Continuous (TC = 25°C) 11 11* A
- Continuous (TC = 100°C) 7 7* A
IDM Drain Current - Pulsed (Note 1) 33 33* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ
IAR Avalanche Current (Note 1) 11 A
EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 125 36 W
- Derate above 25°C 1.0 0.29 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature

Thermal Characteristics
Symbol Parameter FCP11N60 FCPF11N60 Units
RθJC Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2008 Fairchild Semiconductor Corpor Rev. B1, December 2008

 FCP11N60/FCPF11N60
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
VGS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA, TJ = 150°C -- 650 -- V
∆BVDSS Breakdown Voltage Temperature Coef-
ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
/ ∆TJ ficient
Drain-Source Avalanche Breakdown
BVDS VGS = 0 V, ID = 11 A -- 700 -- V
Voltage
IDSS VDS = 600 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 5.5 A -- 0.32 0.38 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 5.5 A (Note 4) -- 9.7 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1148 1490 pF
Coss Output Capacitance f = 1.0 MHz -- 671 870 pF
Crss Reverse Transfer Capacitance -- 63 82 pF
VDS = 480 V, VGS = 0 V,
Coss Output Capacitance -- 35 -- pF
f = 1.0 MHz
Coss eff. Effective Output Capacitance VDS = 0V to 480 V, VGS = 0 V -- 95 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 34 80 ns
VDD = 300 V, ID = 11 A,
tr Turn-On Rise Time -- 98 205 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 119 250 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 56 120 ns
Qg Total Gate Charge VDS = 480 V, ID = 11 A, -- 40 52 nC
Qgs Gate-Source Charge VGS = 10 V -- 7.2 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 21 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 11 A, -- 390 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 5.7 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Typical Characteristics

2
10
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
6.5 V 10
1
10 6.0 V

ID , Drain Current [A]

Bottom : 5.5 V
ID, Drain Current [A]

o
150 C

0 o o
10 0 25 C -55 C
10

* Notes :
1. 250 µs Pulse Test * Note
o
2. TC = 25 C 1. VDS = 40V
10
-1 2. 250 µs Pulse Test

-1
10
-1
10
0
10
1 10
2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.0

0.8
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

1
VGS = 10V 10
RDS(ON) [Ω ],

0.6

0.4 VGS = 20V

0
10 o o
150 C 25 C
0.2
* Notes :
1. VGS = 0V
o
* Note : TJ = 25 C 2. 250 µs Pulse Test

0.0 -1
0 5 10 15 20 25 30 35 40 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

6000 12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
Crss = Cgd VDS = 250V
5000 10

VDS = 400V
VGS , Gate-Source Voltage [V]

4000 8
Capacitance [pF]

Coss
3000 6

* Notes :
1. VGS = 0 V
2000 Ciss 4
2. f = 1 MHz

1000 Crss 2
* Note : ID = 11A

0 0
10
-1
10
0
10
1
0 5 10 15 20 25 30 35 40 45

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Typical Characteristics (Continued)

3.0
1.2

2.5

Drain-Source On-Resistance
Drain-Source Breakdown Voltage

1.1

RDS(ON) , (Normalized)
BV DSS , (Normalized)

2.0

1.0 1.5

1.0
* Notes :
0.9 1. VGS = 0 V
* Notes :
2. ID = 250 µA
0.5 1. VGS = 10 V
2. ID = 5.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

2
10
2
Operation in This Area 10 Operation in This Area
is Limited by R DS(on) is Limited by R DS(on)

100 us 1 100 us
10
1
10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]

10 ms 10 ms
DC 100 ms
0 0
10 10
DC

* Notes : * Notes :
-1 o -1
10 1. TC = 25 C 10
o
1. TC = 25 C
o
2. TJ = 150 C o
2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2
10 10
-2
0 1 2 3
10 10 10 10 10
0 1
10 10
2 3
10
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FCP11N60 for FCPF11N60

12.5

10.0
ID, Drain Current [A]

7.5

5.0

2.5

0.0
25 50 75 100 125 150
o
TC, Case Temperature [ C]

Figure 10. Maximum Drain Current

vs. Case Temperature

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Typical Characteristics (Continued)

0
10

D = 0 .5

Z (t), T h e rm a l R e s p o n s e
0 .2
* N o te s :
-1 0 .1 o
1 . Z θ J C ( t) = 1 .0 C /W M a x .
10
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 5 3 . T J M - T C = P D M * Z θ J C ( t)

0 .0 2 PDM
0 .0 1
t1
t2
θJ C

s in g le p u ls e
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FCP11N60

D = 0 .5
Z (t), T h e rm a l R e s p o n s e

0
10
0 .2

0 .1
* N o te s :
o
0 .0 5 1 . Z θ J C ( t) = 3 .5 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
-1 3 . T J M - T C = P D M * Z θ J C ( t)
10 0 .0 2
0 .0 1 PDM
t1
t2
θJ C

s in g le p u ls e
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FCPF11N60

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Package Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
Package Dimensions

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

©2008 Fairchild Semiconductor Corporation Rev. B1, December 2008

 FCP11N60/FCPF11N60
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™ FRFET® Programmable Active Droop™
CorePLUS™ Global Power ResourceSM QFET® tm

CorePOWER™ Green FPS™ QS™

TinyBoost™
CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™
TinyBuck™
CTL™ GTO™ RapidConfigure™
TinyLogic®
Current Transfer Logic™ IntelliMAX™
TINYOPTO™
EcoSPARK® ISOPLANAR™ ™ TinyPower™
EfficentMax™ MegaBuck™ Saving our world, 1mW /W /kW at a time™
TinyPWM™
EZSWITCH™ * MICROCOUPLER™ SmartMax™
™ TinyWire™
MicroFET™ SMART START™
μSerDes™
MicroPak™ SPM®
® MillerDrive™ STEALTH™
tm MotionMax™ SuperFET™
Fairchild® Motion-SPM™ SuperSOT™-3 UHC®
Fairchild Semiconductor® OPTOLOGIC® SuperSOT™-6 Ultra FRFET™
FACT Quiet Series™ OPTOPLANAR® SuperSOT™-8 UniFET™
FACT® ® SupreMOS™ VCX™
FAST® SyncFET™ VisualMax™
FastvCore™ XS™
tm

PDP SPM™ ®
FlashWriter® *
FPS™ Power-SPM™
PowerTrench® The Power Franchise®
F-PFS™
PowerXS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I37

©2008 Fairchild Semiconductor Corporation Rev.B1.December 2008