APT68GA60LD40

APT68GA60B2D40
600V
APT68GA60LD40
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
TO
through leading technology silicon design and lifetime control processes. A reduced Eoff - -24
7
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
APT68GA60B2D40
when switching at high frequency.
Combi (IGBT and Diode)

FEATURES TYPICAL APPLICATIONS

• Fast switching with low EMI • ZVS phase shifted and other full bridge
• Very Low Eoff for maximum efficiency • Half bridge
• Ultra low Cres for improved noise immunity • High power PFC boost
• Low conduction loss • Welding
• Low gate charge • UPS, solar, and other inverters
• Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial
• RoHS compliant

Absolute Maximum Ratings

Symbol Parameter Ratings Unit
Vces Collector Emitter Voltage 600 V

IC1 Continuous Collector Current @ TC = 25°C 121

IC2 Continuous Collector Current @ TC = 100°C 68 A
ICM Pulsed Collector Current 1 202
VGE Gate-Emitter Voltage 2
±30 V
PD Total Power Dissipation @ TC = 25°C 520 W
SSOA Switching Safe Operating Area @ TJ = 150°C 202A @ 600V
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300

Static Characteristics TJ = 25°C unless otherwise specified

Symbol Parameter Test Conditions Min Typ Max Unit
VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250μA 600
VGE = 15V, TJ = 25°C 2.0 2.5
VCE(on) Collector-Emitter On Voltage V
IC = 40A TJ = 125°C 1.9
VGE(th) Gate Emitter Threshold Voltage VGE =VCE , IC = 1mA 3 4.5 6
VCE = 600V, TJ = 25°C 275
ICES Zero Gate Voltage Collector Current μA
VGE = 0V TJ = 125°C 3000
IGES Gate-Emitter Leakage Current VGS = ±30V ±100 nA
052-6341 Rev F 6 - 2011

Microsemi Website - http://www.microsemi.com

 Dynamic Characteristics TJ = 25°C unless otherwise specified APT68GA60L_B2D40
Symbol Parameter Test Conditions Min Typ Max Unit
Cies Input Capacitance Capacitance 5230
Coes Output Capacitance VGE = 0V, VCE = 25V 526
pF
Cres Reverse Transfer Capacitance f = 1MHz 59
Qg3 Total Gate Charge Gate Charge 198
Qge Gate-Emitter Charge VGE = 15V 32
VCE= 300V nC
Qgc Gate- Collector Charge 66
IC = 40A
TJ = 150°C, RG = 4.7Ω4, VGE = 15V, 202
SSOA Switching Safe Operating Area A
L= 100uH, VCE = 600V
td(on) Turn-On Delay Time Inductive Switching (25°C) 21
tr Current Rise Time VCC = 400V 27
ns
td(off) Turn-Off Delay Time VGE = 15V 133
tf Current Fall Time IC = 40A 88
Eon2 Turn-On Switching Energy RG = 4.7Ω4 715
μJ
Eoff6 Turn-Off Switching Energy TJ = +25°C 607
td(on) Turn-On Delay Time Inductive Switching (125°C) 20
tr Current Rise Time VCC = 400V 26
ns
td(off) Turn-Off Delay Time VGE = 15V 175
tf Current Fall Time IC = 40A 129
Eon2 Turn-On Switching Energy RG = 4.7Ω4 1117
μJ
Eoff6 Turn-Off Switching Energy TJ = +125°C 1025

Thermal and Mechanical Characteristics

Symbol Characteristic Min Typ Max Unit
RθJC Junction to Case Thermal Resistance (IGBT) - - .24
°C/W
RθJC Junction to Case Thermal Resistance (Diode) .67
WT Package Weight - 6.1 - g
Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw 10 in·lbf

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6341 Rev F 6 - 2011
Typical Performance Curves APT68GA60L_B2D40
120 350
V = 15V
GE
TJ= 125°C 15V
300 13V
100
TJ= 55°C 10V

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)
TJ= 150°C 250
80 9V
TJ= 25°C
200
60
150 8V

40
100 7V

20 50 6V

5V
0 0
0 1 2 3 4 5 6 0 4 8 12 16 20 24 28 32
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 25°C)
240 20
250μs PULSE
I = 40A

VGE, GATE-TO-EMITTER VOLTAGE (V)

TEST<0.5 % DUTY C
CYCLE T = 25°C
J
200
IC, COLLECTOR CURRENT (A)

15
160 VCE = 120V

VCE = 300V
120 10

VCE = 480V
80
TJ= 25°C 5
40
TJ= -55°C
TJ= 125°C
0 0
0 2 4 6 8 10 12 0 40 80 120 160 200
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate charge
4 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE

4
3
IC = 80A

IC = 40A 3 IC = 80A
2
IC = 40A
IC = 20A 2

1 IC = 20A
1
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0 0
6 8 10 12 14 16 0 2550 75 100 125 150
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.15 140
VGS(TH), THRESHOLD VOLTAGE

1.10
120
IC, DC COLLECTOR CURRENT (A)

1.05
100
(NORMALIZED)

1.00

0.95 80

0.90
60
052-6341 Rev F 6 - 2011

0.85
40
0.80
20
0.75

0.70 0
-50 -25 0 25 50 75 100 125 150 25 5075 100 125 150
TJ, JUNCTION TEMPERATURE TC, Case Temperature (°C)
FIGURE 7, Threshold Voltage vs Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 Typical Performance Curves APT68GA60L_B2D40
30 250
VCE = 400V
TJ = 25°C, or 125°C

td(OFF), TURN-OFF DELAY TIME (ns)

25 RG = 4.7Ω VGE = 15V
td(ON), TURN-ON DELAY TIME (ns) L = 100μH
200

20 VGE =15V,TJ=125°C
150

15
100 VGE =15V,TJ=25°C
10

50
5 VCE = 400V
RG = 4.7Ω
L = 100μH
0 0
0 20 40 60 80 0 10 20 30 40 50 60 70 80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
70 160
RG = 4.7Ω, L = 100μH, VCE = 400V

60 140

120
50 TJ = 125°C, VGE = 15V
tr, RISE TIME (ns)

100

tr, FALL TIME (ns)

40
80
30 TJ = 25°C, VGE = 15V
60
20
40
TJ = 25 or 125°C,VGE = 15V
10 20
RG = 4.7Ω, L = 100μH, VCE = 400V
0 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
3000 3000
V = 400V V = 400V
EOFF, TURN OFF ENERGY LOSS (μJ)

CE CE
V = +15V V = +15V
Eon2, TURN ON ENERGY LOSS (μJ)

GE GE
R =4.7Ω R = 4.7Ω
G 2500 G

2000 2000
TJ = 125°C
TJ = 125°C

1500

1000 1000
TJ = 25°C
500 TJ = 25°C

0 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn-Off Energy Loss vs Collector Current

8000 3000
V = 400V V = 400V Eon2,80A
CE CE
V = +15V V = +15V
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)

GE GE
7000 T = 125°C Eon2,80A R = 4.7Ω
J 2500 G
Eoff,80A
6000
2000
5000

Eoff,80A 1500
4000
Eon2,40A
052-6341 Rev F 6 - 2011

3000
1000
Eon2,40A Eoff,40A
2000
Eoff,40A Eon2,20A
Eon2,20A 500
1000 Eoff,20A
Eoff,20A
0 0
10 020 30 40 50 25 50 0 75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves APT68GA60L_B2D40
10000 1000
Cies

IC, COLLECTOR CURRENT (A)

C, CAPACITANCE (pF)
100
1000

Coes 10

100
1
Cres

10 0.1
0 100 200 300 400 500 1 10 100 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage FIGURE 18, Minimum Switching Safe Operating Area

0.30
ZθJC, THERMAL IMPEDANCE (°C/W)

0.25
D = 0.9
0.20
0.7

0.15
0.5 Note:

t1

P DM
0.10
0.3
t2

0.05 t
0.1 Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.05 SINGLE PULSE
0
10 -5 10-4 10-3 10-2 0.1 1

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

052-6341 Rev F 6 - 2011

 APT68GA60L_B2D40

10%
Gate Voltage
TJ = 125°C
td(on)
90%
APT30DQ60
tr
Collector Current

V CC IC V CE 10%
5% 5%
Collector Voltage

Switching Energy
A

D.U.T.

Figure 20, Inductive Switching Test Circuit Figure 21, Turn-on Switching Waveforms and Definitions

TJ = 125°C
90%

td(off) Gate Voltage

Collector Voltage

tf
10%
0 Collector Current

Switching Energy

Figure 22, Turn-off Switching Waveforms and Definitions

052-6341 Rev F 6 - 2011
 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions APT68GA60L_B2D40 Unit
IF(AV) Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5) 40
IF(RMS) RMS Forward Current (Square wave, 50% duty) 63 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 320

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions Min Type Max Unit
IF = 40A 2.0
VF Forward Voltage IF = 80A 2.5 Volts
IF = 40A, TJ = 125°C 1.7

DYNAMIC CHARACTERISTICS
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 1A, diF/dt = -100A/μs,
trr Reverse Recovery Time - 22 -
VR = 30V, TJ = 25°C ns
trr Reverse Recovery Time - 25 -
IF = 40A, diF/dt = -200A/μs
Qrr Reverse Recovery Charge - 35 - nC
VR = 400V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 3 - Amps

trr Reverse Recovery Time - 160 - ns

IF = 40A, diF/dt = -200A/μs
Qrr Reverse Recovery Charge - 480 - nC
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 6 - Amps

trr Reverse Recovery Time - 85 - ns

Reverse Recovery Charge IF = 40A, diF/dt = -1000A/μs - 920 - nC

Qrr
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 20 - Amps

0.70

D = 0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.60

0.50 0.7

0.40
0.5
Note:
0.30
t1
P DM

0.3
0.20 t2

t
0.10 Duty Factor D = 1 /t2
0.1
SINGLE PULSE Peak T J = P DM x Z θJC + T C
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 23. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6341 Rev F 6 - 2011

l
 Dynamic Characteristics TJ = 25°C unless otherwise specified APT68GA60L_B2D40
120 180
T = 125°C
J
V = 400V
160 R

trr, REVERSE RECOVERY TIME

80A
IF, FORWARD CURRENT 100
140
40A
80 120
20A
100

(ns)
(A)

60
TJ = 125°C 80

40 60

TJ = 175°C TJ = 25°C 40
20
TJ = -55°C 20

0 0
0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 24. Forward Current vs. Forward Voltage Figure 25. Reverse Recovery Time vs. Current Rate of Change
1400 25

IRRM, REVERSE RECOVERY CURRENT

T = 125°C T = 125°C
J J
Qrr, REVERSE RECOVERY CHARGE

V = 400V V = 400V
R R 80A
1200
80A 20
1000

15
800
(nC)

(A)
40A

600 40A
10

400
20A 20A
5
200

0 0
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs) -diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 26. Reverse Recovery Charge vs. Current Rate of Change Figure 27. Reverse Recovery Current vs. Current Rate of Change
1.4 80
Duty cycle = 0.5
T = 175°C
J
1.2 70
Qrr
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)

trr 60
1.0
IRRM
50
IF(AV) (A)

0.8
40
0.6
trr 30
0.4
Qrr 20

0.2 10

0.0 0
0 25 50 75 100 125 150 25
75 50
100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 28. Dynamic Parameters vs. Junction Temperature Figure 29. Maximum Average Forward Current vs. CaseTemperature
200

180
CJ, JUNCTION CAPACITANCE

160

140

120
(pF)

100

80
052-6341 Rev F 6 - 2011

60

40

20

0
1 10 100 200
VR, REVERSE VOLTAGE (V)
Figure 30. Junction Capacitance vs. Reverse Voltage
Dynamic Characteristics TJ = 25°C unless otherwise specified APT68GA60L_B2D40
Vr

+18V diF /dt Adjus t

0V
D.U.T.
30μH trr/Q rr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER

Figure 31. Diode Test Circuit

1 IF - Forward Conduction Current

1 4
2 diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zer o
3 IRRM - Maximum Reverse Recovery Current
5 0.25 I RRM
4 trr - Reverse Recovery Time measured from zero crossing where 3
diode current goes from positive to negative, to the point at 2

which the straight line through IRRM and 0.25, IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and tRR.

Figure 32. Diode Reverse Recovery Waveform Definition

T-MAXTM (B2) Package Outline TO-264 (L) Package Outline

4.69 (.185) 4.60 (.181)
5.31 (.209) 15.49 (.610) 5.21 (.205) 19.51 (.768)
1.49 (.059) 16.26 (.640) 1.80 (.071) 20.50 (.807)
2.49 (.098) 2.01 (.079)
3.10 (.122)
5.38 (.212) 3.48 (.137)
6.20 (.244)
5.79 (.228)
Collector
(Cathode)

20.80 (.819) 6.20 (.244)

21.46 (.845)
Collector

25.48 (1.003)
26.49 (1.043)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123) 2.29 (.090)
2.29 (.090) 2.69 (.106)
0.40 (.016) 1.65 (.065) 2.69 (.106)
1.016 (.040)
0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800) 19.81 (.780) Gate
Gate 21.39 (.842)
1.01 (.040)
1.40 (.055) Collector (Cathode) Collector (Cathode)
Emitter (Anode) Emitter (Anode)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
052-6341 Rev F 6 - 2011

2.21 (.087) 2.59 (.102) 2.79 (.110)

2.59 (.102) 5.45 (.215) BSC 3.00 (.118) 3.18 (.125)
2-Plcs. 5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)