PD- 91788

IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications VCES = 900V
• Industry benchmark switching losses improve
efficiency of all power supply topologies VCE(on) typ. = 2.25V
G
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
E @VGE = 15V, IC = 28A
• Latest technology IGBT design offers tighter
parameter distribution coupled with n-cha n ne l
exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
• HEXFREDTM diodes optimized for performance with IGBTs.
TO-247AC
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 51
IC @ TC = 100°C Continuous Collector Current 28 A
ICM Pulsed Collector Current  204
ILM Clamped Inductive Load Current ‚ 204
IF @ TC = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 204
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.64
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 900 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.295 — V/°C VGE = 0V, IC = 3.5mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.25 2.7 IC = 28A VGE = 15V
— 2.74 — V IC = 60A See Fig. 2, 5
— 2.12 — IC = 28A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 26 39 — S VCE = 50V, IC = 28A
ICES Zero Gate Voltage Collector Current — — 500 µA VGE = 0V, VCE = 900V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 6.5 mA VGE = 0V, VCE = 900V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13
— 2.1 3.0 IC = 16A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 160 240 IC = 28A
Qge Gate - Emitter Charge (turn-on) — 19 29 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 53 80 VGE = 15V
td(on) Turn-On Delay Time — 71 — TJ = 25°C
tr Rise Time — 50 — ns IC = 28A, VCC = 720V
td(off) Turn-Off Delay Time — 150 220 VGE = 15V, RG = 5.0Ω
tf Fall Time — 110 170 Energy losses include "tail" and
Eon Turn-On Switching Loss — 2.63 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 1.34 — mJ See Fig. 9, 10, 18
Ets Total Switching Loss — 3.97 5.3
td(on) Turn-On Delay Time — 69 — TJ = 150°C, See Fig. 11, 18
tr Rise Time — 52 — ns IC = 28A, VCC = 720V
td(off) Turn-Off Delay Time — 270 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 190 — Energy losses include "tail" and
Ets Total Switching Loss — 6.0 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 3300 — VGE = 0V
Coes Output Capacitance — 200 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 45 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig.
— 164 245 TJ = 125°C 14 IF = 16A
Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig.
— 8.3 15 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig.
— 680 1838 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig.
During tb — 76 — TJ = 125°C 17
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40

F or b oth:
D uty c y c le : 50%
T J = 12 5° C
30 T sink = 90 °C
LOAD CURRENT (A)

G a te d riv e a s s pe c ified
P ow er D is s ipation = 40 W

S q u a re w a v e :

20 60% of rated
voltage

10
Id e a l d io d es

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)

TJ = 25 ° C

100 100
TJ = 150 ° C TJ = 150 °C

TJ = 25 °C
10 10

V GE = 15V V CC = 50V
20µs PULSE WIDTH 5µs PULSE WIDTH
1 1
1 10 5 6 7 8 9 10
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PF50WD
60 3.0
VGE = 15V

VCE , Collector-to-Emitter Voltage(V)

80 us PULSE WIDTH IC = 56 A
Maximum DC Collector Current(A)

50

40 2.5

30 IC = 28 A

20 2.0
IC = 14 A

10

0 1.5
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TJ , Junction Temperature °( C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature Junction Temperature

D = 0.50
Thermal Response (Z thJC )

0.20
0.1
0.10

0.05

0.02
0.01 SINGLE PULSE P DM
(THERMAL RESPONSE)
0.01
t1
t2

Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PF50WD
6000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 28A

VGE , Gate-to-Emitter Voltage (V)

Cres = Cgc
5000 Coes = Cce + Cgc 16
C, Capacitance (pF)

4000 Cies
12

3000

8
2000
C oes
4
1000 Cres

0 0
1 10 100 0 40 80 120 160
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

6.0 100
V CC = 720V RG = 5.0Ω
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 720V
Total Switching Losses (mJ)

5.5 I C = 28A
Total Switching Losses (mJ)

IC = 56 A
5.0

10
IC = 28 A
4.5

IC = 14 A
4.0

3.5 1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG , Gate Resistance( Ω ) TJ , Junction Temperature °( C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PF50WD
16 1000
RG = 5.0Ω VGE = 20V
TJ = 150 ° C T J = 125 oC
VCC = 720V
VGE = 15V
Total Switching Losses (mJ)

I C , Collector Current (A)

12

100

10
4

0 SAFE OPERATING AREA

10 20 30 40 50 60 1
1 10 100 1000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )

T J = 150°C
10
T J = 125°C

T J = 25°C

1
0.0 1.0 2.0 3.0 4.0 5.0 6.0

F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
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 IRG4PF50WD
300 40

VR = 20 0V VR = 2 00V
T J = 125°C T J = 125 °C
T J = 25°C T J = 25°C

30

200

I F = 32A

I R R M - (A )
trr - (n s)

I F = 16A
I F = 32A
20
I F = 8.0A
I F = 16A

100
I F = 8.0A
10

0 0
100 1000 100 1000
di f /dt - (A /µ s) di f /d t - (A /µ s)

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
1200 1000
VR = 200 V
T J = 125°C VR = 20 0V
T J = 25°C T J = 12 5°C
T J = 25 °C

900

I F = 32A
di(rec )M /dt - (A /µ s )
Q R R - (nC )

600 I F = 16A 100

I F = 32 A

I F = 8.0A I F =1 6A
I F = 8 .0A

300

0 10
100 1000 100 1000
di f /d t - (A /µ s) di f /dt - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4PF50WD

Same type
device as
D .U.T.

430µF
80% 90%
of Vce D .U .T.
Vge 10%

VC
90%
t d(off)

10%
Fig. 18a - Test Circuit for Measurement of IC 5%
tr tf
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs
E on Eoff
E ts = (Eon +Eoff )

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O LT A G E D .U .T .
Ic
trr
Q rr =
∫ tx
Ic dtdt
id

10% + V g
+V g
tx
10% Irr
10% V c c
Vcc
D U T V O LT A G E
Vce
AND CURRENT V pk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
5% V c e
td(on) tr

∫
t2
E on = VVce
c e ieIcdtdt

∫
t4
t1 E rec = VVd
d idIcdt dt
t3
t1 t2 D IO D E R E V E R S E
RECOVERY ENERG Y

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4PF50WD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O LT A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 720V
R L=
4 X IC @25°C
1000V Vc*
0 - 720V
50V
600 0µ F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

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IRG4PF50WD
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.

Case Outline and Dimensions — TO-247AC

N O TE S :
3.6 5 (.14 3) -D-
5.3 0 (.20 9) 1 D IM E N S IO N S & T O LE R A N C IN G
15 .90 (.62 6 ) 3.5 5 (.14 0) P E R A N S I Y 1 4 .5 M , 1 982 .
15 .30 (.60 2 ) 4.7 0 (.18 5)
0.2 5 (.0 1 0) M D B M 2 C O N T R O L LIN G D IM E N S IO N : IN C H .
-B- -A- 2.5 0 (.0 89)
3 D IM E N S IO N S A R E S H O W N
1.5 0 (.0 59) M IL L IM E T E R S (IN C H E S ).
5.5 0 (.2 17) 4 4 C O N F O R M S T O JE D E C O U T L IN E
T O -24 7A C .
2 0 .3 0 (.80 0)
1 9 .7 0 (.77 5) 5.5 0 (.2 17)
2X
4.5 0 (.1 77) LEAD A S S IG N M E N T S
1- GATE
1 2 3 2- CO LLECT O R
3- E M IT T E R
4- CO LLECT O R
-C-
1 4 .8 0 (.5 8 3) 4.3 0 (.1 70)
* 1 4 .2 0 (.5 5 9) 3.7 0 (.1 45) * L O N G E R L E A D E D (20m m )
V E R S IO N A V A ILA B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
TO PART NUMBER
2 .40 (.09 4 ) 1.4 0 (.0 56) 0 .80 (.03 1 )
2 .00 (.07 9 ) 3X 3X
1.0 0 (.0 39) 0 .40 (.01 6 )
2X 2.6 0 (.10 2 )
0.2 5 (.0 10) M C A S
5.4 5 (.21 5) 2.2 0 (.08 7 )
3 .40 (.13 3)
2X 3 .00 (.11 8)

CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)

D im en sio ns in M illim e ters a n d (Inche s)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 7/98
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/