PD - 95568

IRG4PC60UPbF
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features C

• UltraFast: Optimized for high operating

frequencies up to 50 kHz in hard switching, VCES = 600V
>200 kHz in resonant mode.
• Generation 4 IGBT design provides tighter
G VCE(on) typ. = 1.6V
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
E @VGE = 15V, IC = 40A
• Lead-Free
n-channel

Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 75
IC @ TC = 100°C Continuous Collector Current 40 A
ICM Pulsed Collector Current  300
ILM Clamped Inductive Load Current ‚ 300
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy ƒ 200 mJ
PD @ TC = 25°C Maximum Power Dissipation 520
W
PD @ TC = 100°C Maximum Power Dissipation 210
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ---- 0.24
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ---- °C/W
RθJA Junction-to-Ambient, typical socket mount ---- 40
Wt Weight 6 (0.21) ---- g (oz)

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage „ 17 ---- ---- V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.28 ---- V/°C VGE = 0V, IC = 1.0mA
---- 1.7 2.0 IC = 40A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage ---- 1.9 ---- IC = 75A See Fig.2, 5
V
---- 1.6 ---- IC = 40A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -12 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance … 44 59 ---- S VCE ≥ 100V, IC = 40A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA V GE = 0V, VCE = 600V
---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 310 320 IC = 40A
Qge Gate - Emitter Charge (turn-on) ---- 41 46 nC VCC = 480V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 110 120 VGE = 15V
td(on) Turn-On Delay Time ---- 39 ----
tr Rise Time ---- 42 ---- TJ = 25°C
ns
td(off) Turn-Off Delay Time ---- 200 IC = 40A, VCC = 480V
tf Fall Time ---- 100 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss ---- 0.28 ---- Energy losses include "tail"
Eoff Turn-Off Switching Loss ---- 1.1 ---- mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss ---- 1.3 1.8
td(on) Turn-On Delay Time ---- 36 ---- TJ = 150°C,
tr Rise Time ---- 42 ---- IC = 40A, VCC = 480V
ns
td(off) Turn-Off Delay Time ---- 300 ---- VGE = 15V, RG = 5.0Ω
tf Fall Time ---- 160 ---- Energy losses include "tail"
Ets Total Switching Loss ---- 2.6 ---- mJ See Fig. 13, 14
LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 5860 ---- VGE = 0V
Coes Output Capacitance ---- 370 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 75 ---- ƒ = 1.0MHz
Notes:

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = TBD µH, „ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG = 5.0W. (See fig. 13a) … Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.

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80
Square wave: Triangular wave:
60% of rated
voltage

60
Clamp voltage:
Ideal diodes
Load Current ( A )

80% of rated

40

For both:
Duty cycle : 50%
20 Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
0
0.1 1 10 100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000 1000
IC, Collector-to-Emitter Current (A)
IC, Collector t-to-Emitter Current (A)

T J = 150°C
100
100

T J = 150°C
10

T J = 25°C
10
1 T J = 25°C

VGE = 15V VCC = 10V

20µs PULSE WIDTH 5µs PULSE WIDTH
0.1 1
0.0 1.0 2.0 3.0 4.0 5.0 4 5 6 7 8 9 10 11
VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC60UPbF

80 3.0
VGE = 15V
V GE = 15V

VCE , Collector-to Emitter Voltage (V)

70 80µs PULSE WIDTH
Maximum DC Collector Current (A)

60

50 IC = 80A

40 2.0

30 IC = 40A

20 IC = 20A

10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160

T C, Case Temperature (°C) T J , Junction Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature Junction Temperature

1
) thJC

D = 0.50
0.1

0.20
Thermal Response (Z

0.10

0.05
P DM

0.01 0.02 SINGLE PULSE

0.01 (THERMAL RESPONSE) t1

t2

Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1

t1, Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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10000 20
V GE = 0V, f = 1MHz V
VccCC= 480V
= 400V
Ic = 40V
C ies = C ge + C gc , C ce SHORTED I C = 40A
C res = C gc
Cies C oes = C ce + C gc
8000 16

VGE , Gate-to-Emitter Voltage (V)

C, Capacitance (pF)

6000 12

Coes

8
4000

Cres

4
2000

0
0 0 100 200 300 400
1 10 100
QG, Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

5.00 100
VCC = 480V RG = 5.0Ω
VGE = 15V VGE = 15V
TJ = 25°C VCC = 480V
Total Switching Losses (mJ)
Total Switching Losses (mJ)

4.00 I C = 40A
10
IC = 80A

3.00
IC = 40A

1
IC = 20A
2.00

1.00 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160

RG, Gate Resistance (Ω) T J, Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PC60UPbF

8.0 1000
VGE = 20V
RG = 5.0Ω
7.0 TJ = 150°C T J = 125°

IC, Collector-to-Emitter Current (A)

VGE = 15V
Total Switching Losses (mJ)

6.0 VCC = 480V

100
5.0
SAFE OPERATING AREA
4.0

3.0
10

2.0

1.0

0.0 1
20 30 40 50 60 70 80 0.1 1 10 100 1000

IC, Collector Current (A) VDS, Drain-to-Source Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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L D.U.T.
480V
VC * RL =
4 X IC@ 25°C
50V 0 - 480V
1000V 480µF
960V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
Driver* D.U.T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
c * Driver same type
as D.U.T., VC = 480V
d e

d
90%

e 10%

VC
90%
t d(off)
Fig. 14b - Switching Loss
Waveforms

10%
I C 5%
tr tf
t d(on) t=5µs
E on E off
E ts = (Eon +Eoff )

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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30

WIT H ASS EMBLY PART NUMBER
LOT CODE 5657 INT ERNATIONAL
ASS EMBLED ON WW 35, 2000 RECT IFIER IRFPE30

IN THE ASS EMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DATE CODE
position indicates "Lead-Free" AS S EMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/