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PD - 9.1112

IRGPC30UD2
INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY DIODE

Features C
• Switching-loss rating includes all "tail" losses VCES = 600V
TM
• HEXFRED soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) VCE(sat) ≤ 3.0V
See Fig. 1 for Current vs. Frequency curve
G
@VGE = 15V, IC = 12A
E
n-channel

Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.

TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ T C = 25°C Continuous Collector Current 23
IC @ T C = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current 92 A
ILM Clamped Inductive Load Current 92
IF @ T C = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 92
VGE Gate-to-Emitter Voltage ± 20 V
PD @ T C = 25°C Maximum Power Dissipation 100 W
PD @ T C = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT — — 1.2
RθJC Junction-to-Case - Diode — — 2.5 °C/W
RθCS Case-to-Sink, flat, greased surface — 0.24 —
RθJA Junction-to-Ambient, typical socket mount — — 40
Wt Weight — 6 (0.21) — g (oz)

Revision 1
C-709

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IRGPC30UD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, I C = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage — 0.63 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.2 3.0 IC = 12A V GE = 15V
— 2.7 — V IC = 23A See Fig. 2, 5
— 2.4 — IC = 12A, T J = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 3.1 8.6 — S VCE = 100V, I C = 12A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, V CE = 600V
— — 2500 VGE = 0V, V CE = 600V, T J = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, T J = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 29 36 IC = 12A
Qge Gate - Emitter Charge (turn-on) — 4.8 6.8 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) — 12 17 See Fig. 8
td(on) Turn-On Delay Time — 67 — TJ = 25°C
tr Rise Time — 56 — ns IC = 12A, V CC = 480V
td(off) Turn-Off Delay Time — 170 250 VGE = 15V, R G = 23Ω
tf Fall Time — 140 270 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.70 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 0.80 — mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss — 1.5 2.5
td(on) Turn-On Delay Time — 61 — TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time — 51 — ns IC = 12A, V CC = 480V
td(off) Turn-Off Delay Time — 190 — VGE = 15V, R G = 23Ω
tf Fall Time — 190 — Energy losses include "tail" and
Ets Total Switching Loss — 1.9 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 680 — VGE = 0V
Coes Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 11 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 I F = 12A
Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 V R = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During t b — 120 — TJ = 125°C 17
Notes:
Repetitive rating; V GE=20V, pulse width VCC=80%(V CES), VGE=20V, L=10µH, Pulse width 5.0µs,
limited by max. junction temperature. R G= 23Ω, ( See fig. 19 ) single shot.
( See fig. 20 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-710

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IRGPC30UD2

20
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T s in k = 9 0 ° C
16 G a te d r iv e a s s p e c ifie d
T u r n -o n lo s s e s in c lu d e
e ffe c ts o f re v e rs e re c o ve ry
Load Current (A)

P o w e r D is s ip a tio n = 2 4 W
12

6 0 % o f ra te d
v o lta g e

A
0
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I RMS of fundamental)

1000 1000
I C , Collector-to-E m itter C urrent (A)

IC , C ollector-to-E m itter C urrent (A )

100

100
TJ = 2 5°C TJ = 1 50 °C

TJ = 15 0 °C 10
TJ = 2 5°C

10

V G E = 15 V V C C = 1 00 V
20 µs P UL S E W ID TH 5 µ s P U L S E W ID TH
1 0.1
1 10 5 10 15 20
V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

C-711

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IRGPC30UD2

25 4.0
V G E = 15 V VG E = 1 5 V
80 µs P UL S E W ID TH

V C E , C ollector-to-E m itter V oltage (V)

M aximum D C Collector Current (A )

3.5
20
I C = 24 A
3.0
15

2.5

10 I C = 12 A
2.0

I C = 6.0A
5
1.5

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (°C ) TC , C ase Tem perature (°C )

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature Case Temperature

10
T he rm al R e sp ons e (Z thJ C )

1
D = 0 .5 0

0 .2 0
PD M
0 .1 0
0.1
0 .0 5 t
1
0 .0 2 t
S IN G L E P U L S E 2
0 .0 1
(T H E R M A L R E S P O N S E ) N o te s :
1 . D u ty fa c to r D = t /t
1 2
2 . P e a k T J = P D M x Z thJ C + T C
0.01
0.00001 0.0001 0.00 1 0.01 0.1 1 10

t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

C-712

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IRGPC30UD2

14 0 0 20
V GE = 0V, f = 1MHz V C E = 40 0V
C ies = C ge + C gc , Cce SHORTED I C = 12 A
12 0 0 C res = C gc

V G E , G ate-to-E m itter V oltag e (V )

C oes = C ce + C gc 16

10 0 0
C , Capacitance (pF )

Cies
12
800
Coes
600
8

400

Cres 4
200

0 0
1 10 100 0 5 10 15 20 25 30

V C E , C o llector-to-Em itter V oltage (V) Q g , T o tal G a te C h a rg e (n C )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

1.7 10
VCC = 480V
VGE = 15V
TC = 25°C
Total Switching Losses (mJ)
Total Switching Losses (mJ)

IC = 12A
I C = 24A

1.6

I C = 12A
1

I C = 6.0A
1.5

RG = 23Ω
VGE = 15V
A VCC = 480V A
1.4 0.1
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , Gate Resistance (Ω) TC , Case Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Case Temperature

C-713

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IRGPC30UD2
5.0 1000
RG = 23Ω VGGE E= 20 V
TC = 150°C T J = 125 °C
V CC = 480V

I C , C o llec to r-to-E m itter C urre nt (A )

Total Switching Losses (mJ)

4.0 V GE = 15V
100

3.0 S A FE O P E RA TIN G A RE A
10

2.0

1
1.0

0.0 A 0.1
0 5 10 15 20 25 1 10 100 1000
I C , Collector-to-Emitter Current (A) V C E , C o lle cto r-to-E m itte r V olta g e (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

100
Instantaneous Forward Current - I F (A)

TJ = 150°C

10
TJ = 125°C

TJ = 25°C

1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V FM (V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

C-714

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IRGPC30UD2
160 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

120

I F = 24A
I F = 24A

I IRRM - (A)
t rr - (ns)

I F = 12A
I F = 12A
80 10
I F = 6.0A
IF = 6.0A

40

0 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
di(rec)M/dt - (A/µs)

400 1000
IF = 6.0A
Q RR - (nC)

I F = 24A
I F = 12A
I F = 12A
200 100

I F = 24A
IF = 6.0A

0 10
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

C-715

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IRGPC30UD2
90% Vge

Same type +Vge

device as
D.U.T.

Vce

430µF 90% Ic
80% 10% Vce
of Vce Ic Ic
D.U.T.
5% Ic

td(off) tf

∫
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf

∫
trr
GATE VOLTAGE D.U.T. trr
Qrr = id dt
Ic
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr

∫
t2

∫
Eon = Vce ie dt t4
t1 Erec = Vd id dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, t3 t4

Defining E on, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr

Refer to Section D for the following:

Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit

Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13

C-716

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