IRGR4045DPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

C
ULTRAFAST SOFT RECOVERY DIODE VCES = 600V
Features
 Low VCE (on) Trench IGBT Technology IC  6.0A, TC = 100°C
 Low Switching Losses
 Maximum Junction temperature 175 °C G Tjmax = 175°C
 5μs SCSOA
 Square RBSOA E VCE(on) typ.  1.7V
 100% of the parts tested for ILM
n-channel
 Positive VCE (on) Temperature Coefficient.
 Ultra Fast Soft Recovery Co-pak Diode
 Tighter Distribution of Parameters
C
 Lead-Free, RoHS Compliant

E
Benefits G
 High Efficiency in a Wide Range of Applications D-Pak
 Suitable for a Wide Range of Switching Frequencies due IRGR4045DPbF
to Low VCE (ON) and Low Switching Losses
 Rugged Transient Performance for Increased Reliability G C E
 Excellent Current Sharing in Parallel Operation Gate Colletor Emitter
 Low EMI

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC@ TC = 25°C Continuous Collector Current 12
IC@ TC = 100°C Continuous Collector Current 6.0
ICM Pulsed Collector Current, VGE = 15V 18
ILM Clamped Inductive Load Current, VGE = 20V c 24 A
IF@TC=25°C Diode Continuous Forward Current 8.0
IF@TC=100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current d 24
Continuous Gate-to-Emitter Voltage ± 20 V
VGE
Transient Gate-to-Emitter Voltage ± 30
PD @ TC =25° Maximum Power Dissipation 77 W
PD @ TC =100° Maximum Power Dissipation 39
TJ Operating Junction and °C
-55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
R JC Junction-to-Case - IGBT e ––– ––– 1.9
R JC Junction-to-Case - Diode e ––– ––– 6.8
R JA Junction-to-Ambient (PCB Mount) g ––– ––– 50
°C/W

R JA Junction-to-Ambient ––– ––– 110

*Qualification standards can be found at http://www.irf.com/

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IRGR4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions R ef . F i g

V(BR)CES Collector-to-Emitter BreakdownVoltage 600 — — V V GE = 0V, Ic =100 μA f

V(BR)CE S/T J T emperature Coeff. of B reakdown Voltage — 0.36 —
o
V/°C V GE = 0V, Ic = 250μA ( 25 -175 C ) f CT 6

— 1.7 2.0 IC = 6.0A, V GE = 15V, TJ = 25°C

VCE(on) Collector-to-Emitter Saturation Voltage — 2.07 — V IC = 6.0A, V GE = 15V, TJ = 150°C 5,6,7,9,

— 2.14 — IC = 6.0A, V GE = 15V, TJ = 175°C 10 ,11

VGE(th) Gate Threshold Voltage 3.5 — 6.5 V V CE = V GE, IC = 150μA

9,10,11,12
o
VGE (th)/T J Threshold Voltage temp. coefficient — -13 — mV/°C V CE = V GE, IC = 250μA ( 25 -175 C )
gfe Forward Transconductance — 5.8 — S V CE = 25V, IC = 6.0A, PW =80s
ICES — — 25 μA V GE = 0V,V CE = 600V
Collector-to-Emitter Leakage Current
— — 250 V GE = 0V, V CE = 600V, TJ =175°C 8

VFM — 1.60 2.30 V IF = 6.0A

Diode Forward Voltage Drop
— 1.30 — IF = 6.0A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA V GE = ± 20 V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. h Units Conditions R ef . F i g

Qg Total Gate Charge (turn-on) — 13 19.5 IC = 6.0A 24

Qge Gate-to-Emitter Charge (turn-on) — 3.1 4.65 nC VCC = 400V CT 1

Qgc Gate-to-Collector Charge (turn-on) — 6.4 9.6 VGE = 15V

Eon Turn-On Switching Loss — 56 86 IC = 6.0A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss — 122 143 μJ RG = 47, L=1mH, LS = 150nH, TJ = 25°C CT 4

Etotal Total Switching Loss — 178 229 E nergy los s es include tail and diode revers e recovery

td(on) Turn-On delay time — 27 35 IC = 6.0A, VCC = 400V

tr Rise time — 11 15 ns RG = 47, L=1mH, LS = 150nH CT 4

td(off) Turn-Off delay time — 75 93 TJ = 25°C

tf Fall time — 17 22
Eon Turn-On Switching Loss — 140 — IC = 6.0A, VCC = 400V, VGE = 15V 13,15

Eoff Turn-Off Switching Loss — 189 — μJ RG = 47, L=1mH, LS = 150nH, TJ = 175°C CT 4

Etotal Total Switching Loss — 329 — E nergy los s es include tail and diode revers e recovery WF 1,WF 2

td(on) Turn-On delay time — 26 — IC = 6.0A, VCC = 400V 14,16

tr Rise time — 12 — ns RG = 47, L=1mH, LS = 150nH CT 4

td(off) Turn-Off delay time — 95 — TJ = 175°C WF 1,WF 2

tf Fall time — 32 —
Cies Input Capacitance — 350 — VGE = 0V 23

Coes Output Capacitance — 29 — pF VCC = 30V

Cres Reverse Transfer Capacitance — 10 — f = 1Mhz
TJ = 175°C, IC = 24A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 500V, Vp =600V CT 2

RG = 100, VGE = +20V to 0V

VCC = 400V, Vp =600V 22
SCSOA Short Circuit Safe Operating Area — 5 — μs
RG = 100, VGE = +15V to 0V CT 3, WF 4
o
Erec Reverse recovery energy of the diode — 178 — μJ TJ = 175 C 17,18,19

trr Diode Reverse recovery time — 74 — ns VCC = 400V, IF = 6.0A 20,21

Irr Peak Reverse Recovery Current — 12 — A VGE = 15V, Rg = 47, L=1mH, LS=150nH WF 3

Notes:
 VCC = 80% (VCES ), VGE = 15V, L = 1.0mH, RG = 47
‚ Pulse width limited by max. junction temperature.
ƒ R is measured at T J approximately 90°C.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
… When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
† Maximum limits are based on statistical sample size characterization.

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 IRGR4045DPbF
14 80

12 70

60
10
50
8

Ptot (W)
IC (A)

40
6
30
4
20

2 10

0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

100 100

10μsec
10 100μsec 10
IC (A)

IC A)

DC
1 1

Tc = 25°C
Tj = 175°C
Single Pulse
0.1 0
1 10 100 1000 10 100 1000
VCE (V) VCE (V)

Fig. 3 - Forward SOA, Fig. 4 - Reverse Bias SOA

TC = 25°C, TJ  175°C, VGE = 15V TJ = 175°C, VGE = 20V

20 20

Top V = 18V
GE
15 V = 15V
15 Top V = 18V
GE GE
VGE = 12V V = 15V
GE
V = 12V
V = 10V GE
GE V = 10V
ICE (A)

ICE (A)

Bottom VGE = 8.0V GE

Bottom V = 8.0V
10 10 GE

5 5

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs TJ = 25°C; tp = 80μs
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IRGR4045DPbF
20 20
Top V = 18V
GE
V = 15V
GE 18
V = 12V
GE
V
GE
= 10V 16
15 Bottom V
GE
= 8.0V
-40°C
14 25°C
175°C
12
ICE (A)

IF (A)
10 10
8
6
5
4
2
0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0
VF (V)
VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80μs tp = 80μs
10 10

8 8

6 ICE = 3.0A 6 ICE = 3.0A

VCE (V)

VCE (V)

ICE = 6.0A ICE = 6.0A

ICE = 12A ICE = 12A
4 4

2 2

0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

10 20
18
T J = 25°C
IC, Collector-to-Emitter Current (A)

8 16 T J = 175°C
14
ICE = 3.0A
6 ICE = 6.0A 12
VCE (V)

ICE = 12A 10

4 8
6

2 4
2

0 0
5 10 15 20 4 6 8 10 12 14 16

VGE (V) VGE, Gate-to-Emitter Voltage (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 10μs

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 IRGR4045DPbF
400 1000

350

tdOFF
300

Swiching Time (ns)

100
Energy (μJ)

250
tF
200 EOFF tdON
10
150
tR
100 EON

50 1
0 2 4 6 8 10 12 14 2 4 6 8 10 12 14

IC (A) IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V. TJ = 175°C; L=1mH; VCE= 400V
RG= 47; VGE= 15V
220 1000

200
EOFF
180 tdOFF
Swiching Time (ns)

100
160
Energy (μJ)

tF
140 EON

tdON
120
10
100 tR

80

60 1
0 25 50 75 100 125 0 25 50 75 100 125

Rg () RG ()
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
30 22

20
25
RG = 10 18
20
16
IRR (A)
IRR (A)

15 RG = 22 14

12
10 RG = 47
10
RG = 100
5
8

0 6
2 4 6 8 10 12 14 0 25 50 75 100 125
IF (A) RG (

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C TJ = 175°C; IF = 6.0A
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IRGR4045DPbF
20 1200

18
1000
12A
16
10
22
800

QRR (nC)
14
IRR (A)

47

12 600 6.0A

10 100
400
8 3.0A

6 200
0 200 400 600 800 1000 1200 0 500 1000 1500

diF /dt (A/μs) diF /dt (A/μs)

Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V; TJ = 175°C
ICE= 6.0A; TJ = 175°C

350 20 50

300
Tsc
RG = 10 15 40
250 Isc
Energy (μJ)

Current (A)
Time (μs)

RG = 22
200 10 30
RG = 47
150
RG = 100 5 20
100

50 0 10
2 4 6 8 10 12 14 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 21 - Typical Diode ERR vs. IF Fig. 22- Typ. VGE vs. Short Circuit Time
TJ = 175°C VCC=400V, TC =25°C

1000 16
Cies V CES = 400V
14
VGE, Gate-to-Emitter Voltage (V)

V CES = 300V
12
100
Capacitance (pF)

10

8
Coes
6
10

Cres 4

1 0
0 100 200 300 400 500 0 2 4 6 8 10 12 14
VCE (V) Q G, Total Gate Charge (nC)
Fig. 23- Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 6.0A, L=600μH
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 IRGR4045DPbF
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Thermal Response ( Z thJC )

1 D = 0.50

0.20
0.10 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.1 0.05 J C 0.0301 0.000004
J 
0.02 1 0.7200 0.000067
2 3 4
1 2 3 4
0.01 0.7005 0.000898
Ci= iRi 0.4479 0.005416
SINGLE PULSE Ci iRi
0.01 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10

D = 0.50
Thermal Response ( Z thJC )

0.20
1
0.10
0.05 R1 R2 R3 R4 Ri (°C/W) i (sec)
R1 R2 R3 R4
J C 0.2056 0.000019
J
0.02 
1.4132 0.000095
1 2 3 4
1 2 3
0.1 0.01 4 3.3583 0.001204
Ci= iRi 1.8245 0.009127
Ci iRi
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGR4045DPbF

L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for

V(BR)CES Measurement

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 IRGR4045DPbF
600 12 600 30

500 10 500 tr 25
TEST
CURRENT
400 8 400 20
tf 90% test
300 6 300 15

VCE (V)
current
VCE (V)

90% ICE

200 4 200 10
10% test
5% ICE current
100 2 100 5
5% VCE
5% VCE
0 0 0 0
Eoff Loss
Eon Loss
-100 -2 -100 -5
-0.2 0 0.2 0.4 0.6 0.8 1 4.3 4.5 4.7
time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

100 15 500 80
450 VCE 70
0 QRR 10
400 60
t RR
-100 5 350 50

-200 0
300 40
Vce (V)
VF (V)

10% 250 30
-300 Peak
Peak
-5
ICE
IRR
IRR 200 20
-400 -10 150 10
100 0
-500 -15
50 -10
-600 -20 0 -20
-0.05 0.05 0.15 0.25 -2 -1 0 1 2 3 4 5 6 7 8
time (µS) Time (uS)

WF.3- Typ. Diode Recovery Waveform WF.4- Typ. Short Circuit Waveform
@ TJ = 175°C using CT.4 @ TJ = 25°C using CT.3

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IRGR4045DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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 IRGR4045DPbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR TRR TRL

16.3 ( .641 ) 16.3 ( .641 )

15.7 ( .619 ) 15.7 ( .619 )

12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 )

FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2012
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