IRGP4063D1PbF
IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
  C  
G
IC = 60A, TC =100°C G

tSC 5µs, TJ(max) = 175°C

G
VCE(ON) typ. = 1.65V @ IC = 48A E
E C
E C
G G
Applica ons  n-channel
IRGP4063D1PbF   IRGP4063D1‐EPbF 
• Industrial Motor Drive 
• Inverters  G C E
• UPS   Gate Collector Emitter
• Welding 
Features Benefits
High efficiency in a wide range of applications and
Low VCE(ON) and switching losses
switching frequencies
Improved reliability due to rugged hard switching
Square RBSOA and maximum junction temperature 175°C
performance and higher power capability
Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation
5µs short circuit SOA Enables short circuit protection scheme
Lead-free, RoHS compliant Environmentally friendly

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP4063D1PbF TO-247AC Tube 25 IRGP4063D1PbF
IRGP4063D1-EPbF TO-247AD Tube 25 IRGP4063D1-EPbF

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 100
IC @ TC = 100°C Continuous Collector Current 60
ICM Pulse Collector Current, VGE = 15V 200 A
ILM Clamped Inductive Load Current, VGE = 20V  192
IF @ TC = 25°C Diode Continous Forward Current 30
IF @ TC = 100°C Diode Continous Forward Current 15
IFM Diode Maximum Forward Current  120
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 330 W
PD @ TC = 100°C Maximum Power Dissipation 170
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance      
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– ––– 0.45
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)  ––– ––– 2.4
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

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IRGP4063D1PbF/IRGP4063D1-EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.3 — V/°C VGE=0V, IC=1mA (25°C-175°C)
— 1.65 2.14 IC = 48A, VGE = 15V, TJ = 25°C
VCE(on)   Collector-to-Emitter Saturation Voltage   V
— 2.05 — IC = 48A,VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA
VGE(th)/TJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE=VGE, IC=1.4mA (25°C-175°C)
gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 20µs
— 1.0 200 V = 0V, VCE = 600V
ICES Collector-to-Emitter Leakage Current µA   GE
— 850 — VGE = 0V, VCE = 600V,TJ = 175°C
— 1.9 2.4 IF = 8A
VFM Diode Forward Voltage Drop V
— 1.2 — IF = 8A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
 
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 100 150 IC = 48A
Qge Gate-to-Emitter Charge (turn-on) — 25 40 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 40 60 VCC = 400V
Eon Turn-On Switching Loss — 1.4 2.3
Eoff Turn-Off Switching Loss — 1.1 2.0 mJ IC = 48A, VCC = 400V, VGE = 15V
Etotal Total Switching Loss — 2.5 4.3
RG = 10, L = 485µH, TJ = 25°C
td(on) Turn-On delay time — 60 80
Energy losses include tail & diode
tr Rise time — 50 70 ns
td(off) Turn-Off delay time — 160 185 reverse recovery 
tf Fall time — 30 50
Eon Turn-On Switching Loss — 2.0 —
Eoff Turn-Off Switching Loss — 1.5 — mJ
IC = 48A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 3.5 —
RG=10, L= 485µH, TJ = 175°C
td(on) Turn-On delay time — 50 —
Energy losses include tail & diode
tr Rise time — 55 — ns
reverse recovery 
td(off) Turn-Off delay time — 165 —
tf Fall time — 55 —
Cies Input Capacitance — 2900 — VGE = 0V
Coes Output Capacitance — 200 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz
TJ = 175°C, IC = 192A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V
Rg = 50, VGE = +20V to 0V
VCC = 400V, Vp ≤600V
SCSOA Short Circuit Safe Operating Area 5 — — µs
Rg = 50, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 245 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 80 — ns VCC = 400V, IF = 48A
Irr Peak Reverse Recovery Current — 20 — A VGE = 15V, Rg = 10, L = 485µH

Notes:
VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 50.
 R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.

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IRGP4063D1PbF/IRGP4063D1-EPbF
For both:
100 Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 167W
Load Current ( A )

80

60
Square Wave:
VCC

40 I

Diode as specified

20
0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)

120 350

300
100

250
80
200
Ptot (W)
IC (A)

60
150

40
100

20 50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC (°C)
TC (°C)

Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.

Case Temperature
1000 1000
OPERATION IN THIS AREA
LIMITED BY V (on)
CE
IC, Collector-to -Emitter Current (A)

100
1msec
100µsec
100
10
IC (A)

10msec
1
10

0.1 DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.01 1
1 10 100 1000 10 100 1000

VCE , Collector-to-Emitter Voltage (V) VCE (V)

Fig. 4 - Forward SOA Fig. 5 - Reverse Bias SOA

TC = 25°C, TJ @ 175°C; VGE =15V TJ = 175°C; VGE = 20V

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IRGP4063D1PbF/IRGP4063D1-EPbF
200 200
VGE = 18V VGE = 18V
VGE = 15V VGE = 15V
VGE = 12V 150 VGE = 12V
150
VGE = 10V VGE = 10V
VGE = 8.0V VGE = 8.0V

ICE (A)
ICE (A)

100 100

50 50

0 0
0 2 4 6 8 10 0 2 4 6 8 10

V CE (V) V CE (V)

Fig. 6 - Typ. IGBT Output Characteristics Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs TJ = 25°C; tp = 20µs

200 200

VGE = 18V
150 VGE = 15V 150
VGE = 12V
VGE = 10V
ICE (A)

IF (A)

VGE = 8.0V 100

100

TJ =175°C
TJ = 25°C
50 50
TJ = -40°C

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0
V CE (V) V F (V)

Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 20µs tp = 20µs
8
8

6
6
ICE = 24A ICE = 24A
ICE = 48A
VCE (V)

ICE = 48A
VCE (V)

4 ICE = 96A 4
ICE = 96A

2 2

0
0
6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20
V GE (V)
V GE (V)

Fig. 10 - Typical VCE vs. VGE Fig. 111 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

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IRGP4063D1PbF/IRGP4063D1-EPbF
8 200

IC, Collector-to-Emitter Current(A)

TJ = 25°C
6 ICE = 24A 150 TJ = 175°C
ICE = 48A
ICE = 96A
VCE (V)

4 100

2 50

0 0
6 8 10 12 14 16 18 20 6 8 10 12 14 16

V GE (V) V GE, Gate-to-Emitter Voltage (V)

Fig. 12 - Typical VCE vs. VGE Fig. 13 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 20µs
7 1000

5 EON Swiching Time (ns)

Energy (mJ)

4 tdOFF

100
3 tF
EOFF tdON
2

1 tR

0 10
0 20 40 60 80 100 120 0 20 40 60 80 100 120
IC (A) IC (A)

Fig. 14 - Typ. Energy Loss vs. IC Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V

6 1000

5 EOFF
tdOFF
Swiching Time (ns)

tF
EON
Energy (mJ)

4
tR
100

3 tdON

1 10
0 20 40 60 80 100 120 0 20 40 60 80 100 120
RG () RG ()

Fig. 16 - Typ. Energy Loss vs. RG Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V

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IRGP4063D1PbF/IRGP4063D1-EPbF

26 22

24
20
22 RG = 10
18
20
RG = 22
IRR (A)

IRR (A)
18 16

16 RG = 47
14
14
12
12 RG = 100

10 10
20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120
IF (A) RG ()

Fig. 18 - Typ. Diode IRR vs. IF Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C
22 1600
1500
20 1400 96A 
1300  48A
18 1200
QRR (nC)


IRR (A)

1100
24A
16 1000

900
14 800
700
12 600
300 400 500 600 700 800 900 1000 1100 200 400 600 800 1000 1200
diF /dt (A/µs) diF /dt (A/µs)

Fig. 20 - Typ. Diode IRR vs. diF/dt Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C

300 20 1000

RG =10 Tsc
250 16 800
RG = 22
Isc
200
12 600
Energy (µJ)

Current (A)
Time (µs)

RG = 47
150
8 400
100 RG = 100

4 200
50

0 0 0
0 20 40 60 80 100 120 8 10 12 14 16 18

IF (A) VGE (V)

Fig. 23 - VGE vs. Short Circuit Time
Fig. 22 - Typ. Diode ERR vs. IF VCC = 400V; TC = 25°C
TJ = 175°C

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IRGP4063D1PbF/IRGP4063D1-EPbF
10000 18

16
Cies

VGE, Gate-to-Emitter Voltage (V)

VCES = 400V
14 VCES = 300V
Capacitance (pF)

1000 12

10

8
100 Coes 6

4
Cres
2
10 0
0 100 200 300 400 500 0 20 40 60 80 100 120
VCE (V) Q G, Total Gate Charge (nC)
Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 48A
1

D = 0.50

0.1
Thermal Response ( ZthJC )

0.20
0.10
0.05 Ri (°C/W) I (sec)
R1 R2 R3 R4
0.02 R1 R2 R3 R4
0.01 0.01 J C 0.0120 0.000012
J C
1 2 3 4 0.1158 0.00013
1 2 3 4
0.1820 0.00379
Ci= iRi
0.001 SINGLE PULSE Ci= iRi 0.1399 0.02387
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10

1 D = 0.50
Thermal Response ( ZthJC )

0.20
0.10 Ri (°C/W)
R1 R2 R3 R4 I (sec)
0.05 R1 R2 R3 R4
0.1 J 0.1343 0.00009
C
0.02 J C
0.01 1 2 3 4 0.7058 0.00032
1 2 3 4
1.0181 0.00327
Ci= iRi
0.01 Ci= iRi
SINGLE PULSE 0.5434 0.03079
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4063D1PbF/IRGP4063D1-EPbF

80 V +
- DUT VCC
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

4X L

DC VCC
-5V

DUT DUT / VCC

DRIVER
Rg

RSH

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force
R = VCC
ICM

100K

D1 22K
C sense
VCC
DUT DUT
G force 0.0075µF
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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IRGP4063D1PbF/IRGP4063D1-EPbF

700 140 600 120

600 120 500 100

tf
tr
500 100 TEST
400 CURRENT
80

400 80
300 60

VCE (V)
VCE (V)

ICE (A)
ICE (A)
300 90% ICE 60
200 40
200 40 90% ICE
10% ICE
5% VCE 100 20
100 20 5% VCE
5% ICE

0 0
0 0
Eon Loss
Eoff Loss -100 -20
-100 -20
-2 -1 0 1 2 3 4 5 -3 -2 -1 0 1 2 3 4

time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

60 600 1200

QRR VCE
45 500 1000

30 400 800

tRR
IF (A)

15 300 600
Vce (V)

Ice (A)
200 ICE 400
0

Peak
IRR 100 200
-15 10%
Peak
IRR 0 0
-30
-1.50 -0.50 0.50 1.50 2.50 3.50
-100 -200
time (µS) -1 0 1 2 3 4 5
Time (uS)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 25°C using Fig. CT.3

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IRGP4063D1PbF/IRGP4063D1-EPbF

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

E
A A "A"
E2/2
A2

Q
E2
2X

D
B

L1
"A"

SEE
VIEW"B"

2x b2 3x b Ø .010 BA c
b4
A1
e 2x
LEAD TIP

ØP
Ø.010 B A
-A-

D1

VIEW: "B"
THERMAL PAD
PLATING

BASEMETAL

E1
(c)
Ø.010 B A

VIEW: "A" - "A" (b, b2, b4)

SECTION: C-C, D-D, E-E

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4063D1PbF/IRGP4063D1-EPbF

TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

EXAM PLE: T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y PART N U M BER
LO T C O D E 5657 IN T E R N A T IO N A L
ASSEM BLED O N W W 35, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "H " LO G O 035H
56 57
D A TE C O D E
ASSEM B LY YE A R 0 = 20 0 0
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a t e s "L e a d - F re e " LO T C O D E W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4063D1PbF/IRGP4063D1-EPbF

Qualification Information†
Industrial
Qualification Level (per JEDEC JESD47F) ††
TO-247AC
Moisture Sensitivity Level N/A
TO-247AD
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.

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